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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RQ5A040ZPTL | ROHM Semiconductor | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 12V | 700mW Ta | P-Channel | 2350pF @ 6V | 30m Ω @ 4A, 4.5V | 1V @ 1mA | 4A Ta | 30nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7M12-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m1260ex-datasheets-5480.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 75W Tc | 53A | 211A | 0.012Ohm | 34.3 mJ | N-Channel | 1625pF @ 25V | 12m Ω @ 15A, 10V | 4V @ 1mA | 53A Tc | 24.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI1469DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1469dht1e3-datasheets-7724.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 3.2A | 12V | SILICON | SWITCHING | 20V | 20V | 1.5W Ta 2.78W Tc | 2.7A | 8A | 0.08Ohm | P-Channel | 470pF @ 10V | 80m Ω @ 2A, 10V | 1.5V @ 250μA | 2.7A Tc | 8.5nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SQJA68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqja68ept1ge3-datasheets-5578.pdf | PowerPAK® SO-8L | 1.267mm | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 45W | 1 | 175°C | R-PSSO-G4 | 9 ns | 15 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W Tc | 0.092Ohm | 20 pF | 4 mJ | 100V | N-Channel | 280pF @ 25V | 40ns | 25ns | 92m Ω @ 4A, 10V | 2.5V @ 250μA | 14A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| VN0109N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-vn0109n3g-datasheets-5612.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | Tin | e3 | BOTTOM | NOT APPLICABLE | 1 | NOT APPLICABLE | 1W | 1 | 3 ns | 5ns | 5 ns | 6 ns | 350mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Tc | 3Ohm | 8 pF | 90V | N-Channel | 65pF @ 25V | 3 Ω @ 1A, 10V | 2.4V @ 1mA | 350mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| ECH8315-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-ech8315tlh-datasheets-5632.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 2 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 8 | Single | 1.5W | 1 | Other Transistors | 8.1 ns | 33ns | 60 ns | 92 ns | 7.5A | 20V | 30V | 1.5W Ta | P-Channel | 875pF @ 10V | 25m Ω @ 3.5A, 10V | 7.5A Ta | 18nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMS5P02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntms5p02r2g-datasheets-5645.pdf | -20V | -5.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 38 Weeks | No SVHC | 26MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | Other Transistors | 22 ns | 25ns | 55 ns | 70 ns | 5.4A | 10V | SILICON | SWITCHING | 20V | 790mW Ta | 3.95A | -20V | P-Channel | 1900pF @ 16V | -900 mV | 33m Ω @ 5.4A, 4.5V | 1.25V @ 250μA | 3.95A Ta | 35nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||
| FQD6N25TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd6n25tm-datasheets-5585.pdf | 250V | 4.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 65ns | 30 ns | 7.5 ns | 4.4A | 30V | SILICON | DRAIN | SWITCHING | 2.5W Ta 45W Tc | 1Ohm | 75 mJ | 250V | N-Channel | 300pF @ 25V | 1 Ω @ 2.2A, 10V | 5V @ 250μA | 4.4A Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| RSR020P05TL | ROHM Semiconductor | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | SC-96 | Lead Free | 3 | 96 | EAR99 | e1 | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G3 | 8 ns | 10ns | 10 ns | 35 ns | 2A | 20V | SILICON | SWITCHING | 45V | 540mW Ta | 2A | 0.28Ohm | -45V | P-Channel | 500pF @ 10V | 190m Ω @ 2A, 10V | 3V @ 1mA | 2A Ta | 4.5nC @ 4.5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDZ661PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdz661pz-datasheets-5663.pdf | 4-XFBGA, WLCSP | 800μm | 150μm | 800μm | Lead Free | 4 | 10 Weeks | 67mg | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | Single | 1.3W | 1 | Other Transistors | 4.9 ns | 6.3ns | 33 ns | 68 ns | 2.6A | 8V | SILICON | SWITCHING | 20V | 1.3W Ta | 70 pF | -20V | P-Channel | 555pF @ 10V | 140m Ω @ 2A, 4.5V | 1.2V @ 250μA | 2.6A Ta | 8.8nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| DN2450N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2450k4g-datasheets-5609.pdf | TO-243AA | Lead Free | 3 | 9 Weeks | 52.786812mg | No SVHC | 3 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | SINGLE | FLAT | 260 | 40 | 1.6W | 1 | FET General Purpose Power | 230mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.6W Ta | 0.9A | 500V | N-Channel | 200pF @ 25V | 10 Ω @ 300mA, 0V | 230mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| MCU07N65-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcu07n65tp-datasheets-5688.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 650V | N-Channel | 1600pF @ 25V | 1.4 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm038n03pq33rgg-datasheets-5626.pdf | 8-PowerWDFN | 20 Weeks | 8-PDFN (3x3) | 30V | 39W Tc | N-Channel | 2557pF @ 15V | 3.8mOhm @ 19A, 10V | 2.5V @ 250μA | 78A Tc | 25nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD22202W15 | Texas Instruments | $5.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /storage/upload/CSD22202W15.pdf | 9-UFBGA, DSBGA | 1.75mm | 625μm | 1.75mm | Lead Free | 9 | 16 Weeks | 9 | ACTIVE (Last Updated: 6 days ago) | yes | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD22202 | Single | 1.5W | 1 | Other Transistors | 10.4 ns | 8.4ns | 38 ns | 109 ns | 10A | -6V | SILICON | SWITCHING | 1.5W Ta | 48A | 250 pF | 8V | P-Channel | 1390pF @ 4V | 12.2m Ω @ 2A, 4.5V | 1.1V @ 250μA | 10A Ta | 8.4nC @ 4.5V | 2.5V 4.5V | ||||||||||||||||||||||||||||||||||||||||
| SQ2389ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2389est1ge3-datasheets-5418.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | No SVHC | 3 | EAR99 | unknown | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 3W | 1 | 175°C | 7 ns | 12ns | 4 ns | 16 ns | -4.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 2V | 3W Tc | 54 pF | -40V | P-Channel | 420pF @ 20V | 94m Ω @ 10A, 10V | 2.5V @ 250μA | 4.1A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMC7680 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7680-datasheets-5323.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 23 Weeks | 165.33333mg | No SVHC | 7.2MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 2.3W | 1 | FET General Purpose Power | S-PDSO-N5 | 12 ns | 4ns | 3 ns | 25 ns | 14.8A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.3W Ta 31W Tc | 45A | 72 mJ | 30V | N-Channel | 2855pF @ 15V | 2 V | 7.2m Ω @ 14.8A, 10V | 3V @ 250μA | 14.8A Ta | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTMFS4937NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4937nt1g-datasheets-5181.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 920mW | 1 | FET General Purpose Power | 70A | 20V | SILICON | DRAIN | SWITCHING | 1.63V | 920mW Ta 43W Tc | 0.007Ohm | 30V | N-Channel | 2516pF @ 15V | 1.63 V | 4m Ω @ 30A, 10V | 2.2V @ 250μA | 10.2A Ta 70A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI1499DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1499dht1e3-datasheets-4944.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 30 | 2.5W | 1 | Other Transistors | 8 ns | 40ns | 60 ns | 46 ns | 1.6A | 5V | SILICON | SWITCHING | 8V | 2.5W Ta 2.78W Tc | 0.078Ohm | -8V | P-Channel | 650pF @ 4V | 78m Ω @ 2A, 4.5V | 800mV @ 250μA | 1.6A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||
| DMN2005UFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn2005ufg13-datasheets-5374.pdf | 8-PowerVDFN | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 12.4 ns | 25.7ns | 38 ns | 114 ns | 18.1A | 12V | 1.05W Ta | 20V | N-Channel | 6495pF @ 10V | 4.6m Ω @ 13.5A, 4.5V | 1.2V @ 250μA | 18.1A Tc | 164nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD5P10TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fqd5p10tm-datasheets-5316.pdf | -100V | -3.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 36A | e3 | 100V | GULL WING | Single | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 9 ns | 70ns | 30 ns | 12 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | -2V | 2.5W Ta 25W Tc | 55 mJ | -100V | P-Channel | 250pF @ 25V | 1.05 Ω @ 1.8A, 10V | 4V @ 250μA | 3.6A Tc | 8.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| RQ6E080AJTCR | ROHM Semiconductor | $1.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOT-23-6 Thin, TSOT-23-6 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 950mW Ta | N-Channel | 1810pF @ 15V | 16.5m Ω @ 8A, 4.5V | 1.5V @ 2mA | 8A Ta | 16.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN4010LFG-7 | Diodes Incorporated | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn4010lfg7-datasheets-5280.pdf | 8-PowerVDFN | 1.81nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | DMN4010 | 1 | Single | NOT SPECIFIED | 11.5A | 20V | 930mW Ta | 40V | N-Channel | 1810pF @ 20V | 12m Ω @ 14A, 10V | 3V @ 250μA | 11.5A Ta | 37nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN8R903NL,LQ | Toshiba Semiconductor and Storage | $0.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | 8.3 ns | 2.4ns | 2.1 ns | 14 ns | 20A | 20V | 30V | 700mW Ta 22W Tc | N-Channel | 820pF @ 15V | 8.9m Ω @ 10A, 10V | 2.3V @ 100μA | 20A Tc | 9.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8880 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdd8880-datasheets-5453.pdf | 30V | 58A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 9MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 55W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 91ns | 32 ns | 38 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 55W Tc | TO-252AA | 30V | N-Channel | 1260pF @ 15V | 9m Ω @ 35A, 10V | 2.5V @ 250μA | 13A Ta 58A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BUK7M8R0-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m8r040ex-datasheets-5460.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | 69A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 75W Tc | 276A | 0.008Ohm | 39.9 mJ | N-Channel | 1567pF @ 25V | 8m Ω @ 20A, 10V | 4V @ 1mA | 69A Tc | 23.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDC642P-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc642pf085-datasheets-5364.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 15 Weeks | yes | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.2W Ta | 4A | 20A | 0.065Ohm | 72 mJ | P-Channel | 640pF @ 10V | 65m Ω @ 4A, 4.5V | 1.5V @ 250μA | 4A Ta | 16nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2005UFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn2005ufg13-datasheets-5374.pdf | 8-PowerVDFN | 6.495nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 12.4 ns | 25.7ns | 38 ns | 114 ns | 18.1A | 4.5V | 20V | 1.05W Ta | N-Channel | 6495pF @ 10V | 4.6m Ω @ 13.5A, 4.5V | 1.2V @ 250μA | 18.1A Tc | 164nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RUQ050N02TR | ROHM Semiconductor | $10.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/rohm-ruq050n02tr-datasheets-2845.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 20 Weeks | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | 10 | 1.25W | 1 | FET General Purpose Power | 15 ns | 25ns | 100 ns | 70 ns | 5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.25W Ta | 5A | 10A | 0.038Ohm | 20V | N-Channel | 900pF @ 10V | 30m Ω @ 5A, 4.5V | 1.3V @ 1mA | 5A Ta | 12nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| DN3145N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microchiptechnology-dn3145n8g-datasheets-5540.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 6 Weeks | 52.786812mg | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | FLAT | 260 | 1 | Single | 40 | 1.3W | 1 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 20 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1.3W Ta | 450V | N-Channel | 120pF @ 25V | 60 Ω @ 100mA, 0V | 100mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TSM900N06CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/taiwansemiconductorcorporation-tsm900n06chx0g-datasheets-7639.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | TO-252, (D-Pak) | 60V | 25W Tc | N-Channel | 500pF @ 15V | 90mOhm @ 6A, 10V | 2.5V @ 250μA | 11A Tc | 9.3nC @ 10V | 4.5V 10V | ±20V |
