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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SK536-TB-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-2sk536tbe-datasheets-4219.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 2 Weeks | 10Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | 3 | 200mW | 100mA | 50V | 200mW Ta | N-Channel | 15pF @ 10V | 20 Ω @ 10mA, 10V | 100mA Ta | 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC855N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdc855n-datasheets-3734.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 13 Weeks | 36mg | No SVHC | 27MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | FET General Purpose Power | 6 ns | 2ns | 2 ns | 14 ns | 6.1A | 20V | SILICON | SWITCHING | 2V | 1.6W Ta | 95 pF | 30V | N-Channel | 655pF @ 15V | 2 V | 27m Ω @ 6.1A, 10V | 3V @ 250μA | 6.1A Ta | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDMC7696 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7696-datasheets-4030.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 23 Weeks | 180mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 25W | 1 | FET General Purpose Power | S-PDSO-N5 | 9 ns | 2ns | 2 ns | 19 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.4W Ta 25W Tc | 50A | 30V | N-Channel | 1430pF @ 15V | 2 V | 11.5m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 20A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| 2SK3065T100 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/rohmsemiconductor-2sk3065t100-datasheets-4036.pdf | 60V | 2A | TO-243AA | Lead Free | 3 | 8 Weeks | Unknown | 450mOhm | 3 | yes | EAR99 | No | FLAT | 260 | 3 | Single | 10 | 500mW | 1 | FET General Purpose Power | 20 ns | 50ns | 70 ns | 120 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 800mV | 500mW Ta | 2A | 60V | N-Channel | 160pF @ 10V | 800 mV | 320m Ω @ 1A, 4V | 1.5V @ 1mA | 2A Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN4R4-30MLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn4r430mlc115-datasheets-4046.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | Tin | No | e3 | IEC-60134 | YES | SINGLE | GULL WING | 8 | 69W | 1 | R-PSSO-G4 | 12.6 ns | 23.2ns | 11.2 ns | 16 ns | 70A | 2.15V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 69W Tc | 363A | 0.006Ohm | 30V | N-Channel | 1515pF @ 15V | 4.65m Ω @ 25A, 10V | 2.15V @ 1mA | 70A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R0-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn6r030yldx-datasheets-4064.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | No | YES | GULL WING | PSMN6R0 | 4 | 1 | Single | 1 | 9 ns | 16.2ns | 10.9 ns | 10.5 ns | 66A | 20V | 30V | SILICON | DRAIN | SWITCHING | 47W Tc | MO-235 | 263A | 0.00835Ohm | 30V | N-Channel | 832pF @ 15V | 6m Ω @ 15A, 10V | 2.2V @ 1mA | 66A Tc | 13.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6796 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 1.35nF | 70A | 30V | 6.2W Ta 31W Tc | N-Channel | 1350pF @ 15V | 3.9mOhm @ 20A, 10V | 1.9V @ 250μA | 32A Ta 70A Tc | 23nC @ 10V | 3.9 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M35-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m3580ex-datasheets-3780.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 62W Tc | 106A | 0.035Ohm | 32.3 mJ | N-Channel | 1804pF @ 25V | 31m Ω @ 5A, 10V | 2.1V @ 1mA | 26A Tc | 13.5nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD13202Q2 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-VDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 8 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | 750μm | EAR99 | AVALANCHE RATED | Tin | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | NOT SPECIFIED | CSD13302 | 1 | Single | NOT SPECIFIED | 2.7W | 1 | FET General Purpose Power | 4.5 ns | 28ns | 13.6 ns | 11 ns | 22A | 8V | SILICON | DRAIN | SWITCHING | 800mV | 2.7W Ta | 20 mJ | 12V | N-Channel | 997pF @ 6V | 9.3m Ω @ 5A, 4.5V | 1.1V @ 250μA | 22A Ta | 6.6nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| VP2110K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-vp2110k1g-datasheets-3829.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | 3 | 5 Weeks | 1.437803g | 3 | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | Other Transistors | 4 ns | 5ns | 5 ns | 5 ns | 120mA | 20V | SILICON | SWITCHING | 100V | 360mW Ta | 8 pF | -100V | P-Channel | 60pF @ 25V | 12 Ω @ 500mA, 10V | 3.5V @ 1mA | 120mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMT6017LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt6017lss13-datasheets-3854.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 9.2A | 60V | 1.5W Ta | N-Channel | 864pF @ 30V | 18m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSR025P03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/rohmsemiconductor-rsr025p03tl-datasheets-3867.pdf | -30V | -2.5A | SC-96 | Lead Free | 3 | 10 Weeks | 160MOhm | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | Other Transistors | 10 ns | 10ns | 10 ns | 42 ns | 2.5A | 20V | SILICON | SWITCHING | 30V | 1W Ta | -30V | P-Channel | 460pF @ 10V | 98m Ω @ 2.5A, 10V | 2.5A Ta | 5.4nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIRA18DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira18dpt1ge3-datasheets-3935.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | Tin | No | DUAL | FLAT | 240 | 40 | 3.3W | 1 | FET General Purpose Powers | R-PDSO-F5 | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.2V | 3.3W Ta 14.7W Tc | 70A | 0.0075Ohm | N-Channel | 1000pF @ 15V | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 33A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMT3006LPS-13 | Diodes Incorporated | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt3006lps13-datasheets-3929.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 65A | 30V | 1.3W Ta 42W Tc | N-Channel | 1320pF @ 15V | 6m Ω @ 20A, 10V | 3V @ 250μA | 16A Ta 65A Tc | 22.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6421-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-mch6421tle-datasheets-3951.pdf | 6-SMD, Flat Leads | 2mm | 850μm | 1.6mm | Lead Free | 2 Weeks | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 6 | Single | 1.5W | FET General Purpose Powers | 7.5 ns | 26ns | 32 ns | 38 ns | 5.5A | 12V | 1.5W Ta | 20V | N-Channel | 410pF @ 10V | 38m Ω @ 2A, 4.5V | 1.3V @ 1mA | 5.5A Ta | 5.1nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTF015P02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-rtf015p02tl-datasheets-3879.pdf | -20V | -1.5A | 3-SMD, Flat Lead | Lead Free | 3 | 7 Weeks | No SVHC | 250MOhm | 3 | yes | EAR99 | No | 15A | e2 | TIN COPPER | 20V | DUAL | 260 | 3 | Single | 10 | 800mW | 1 | Other Transistors | 12 ns | 12ns | 12 ns | 38 ns | 1.5A | 12V | 20V | SILICON | SWITCHING | 800mW Ta | -20V | P-Channel | 560pF @ 10V | 2 V | 135m Ω @ 1.5A, 4.5V | 2V @ 1mA | 1.5A Ta | 5.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| MCH6448-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-mch6448tlh-datasheets-3890.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 850μm | 1.6mm | Lead Free | 2 Weeks | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 6 | Single | 1.5W | 6 ns | 47ns | 81 ns | 103 ns | 8A | 9V | 1.5W Ta | 20V | N-Channel | 705pF @ 10V | 22m Ω @ 4A, 4.5V | 8A Ta | 11.2nC @ 4.5V | 1.2V 4.5V | ±9V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4051LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp4051lk313-datasheets-3657.pdf&product=diodesincorporated-dmp4051lk313-6834369 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7mm | 2.52mm | 6.2mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 51mOhm | 3 | no | EAR99 | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 40 | 4.18W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 2.3 ns | 14.1ns | 14.3 ns | 25.1 ns | -7.2A | 20V | SILICON | DRAIN | SWITCHING | 40V | -3V | 2.14W Ta | TO-252AA | 28.9A | -40V | P-Channel | 674pF @ 20V | 51m Ω @ 12A, 10V | 3V @ 250μA | 7.2A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMN24H3D5L-7 | Diodes Incorporated | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn24h3d5l7-datasheets-3722.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 22 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | 480mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 240V | 240V | 760mW Ta | 0.48A | N-Channel | 188pF @ 25V | 3.5 Ω @ 300mA, 10V | 2.5V @ 250μA | 480mA Ta | 6.6nC @ 10V | 3.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSQ035P03TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rsq035p03tr-datasheets-3743.pdf | -30V | -3.5A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 101 Weeks | No SVHC | 95MOhm | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | 10 | 1.25W | 1 | Other Transistors | 15 ns | 35ns | 35 ns | 45 ns | 3.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.5V | 1.25W Ta | -30V | P-Channel | 780pF @ 10V | 65m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A Ta | 9.2nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| RTR025N05TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | SC-96 | Lead Free | 3 | 20 Weeks | 130MOhm | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 9 ns | 15ns | 14 ns | 20 ns | 2.5A | 12V | SILICON | SWITCHING | 1W Ta | 45V | N-Channel | 250pF @ 10V | 130m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 2.5A Ta | 3.2nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4047LFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/diodesincorporated-dmp4047lfde7-datasheets-3386.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | 17 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | 1 | Single | 40 | 1 | Other Transistors | S-PDSO-N3 | 18.4 ns | 28.2ns | 28.6 ns | 38.8 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 40V | -2.2V | 700mW Ta | 3.3A | 0.033Ohm | -40V | P-Channel | 1382pF @ 20V | 33m Ω @ 4.4A, 10V | 2.2V @ 250μA | 3.3A Ta | 23.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI2338DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2338dst1ge3-datasheets-3345.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.3W | 1 | FET General Purpose Power | 3 ns | 11ns | 7 ns | 20 ns | 6A | 20V | SILICON | SWITCHING | 2.5V | 1.3W Ta 2.5W Tc | 6A | 25A | 0.028Ohm | 30V | N-Channel | 424pF @ 15V | 28m Ω @ 5.5A, 10V | 2.5V @ 250μA | 6A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF5802TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf5802trpbf-datasheets-3461.pdf | 150V | 900mA | SOT-23-6 Thin, TSOT-23-6 | 2.9972mm | 900μm | 1.4986mm | Contains Lead | 6 | 12 Weeks | No SVHC | 1.2Ohm | 6 | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 2W | 1 | FET General Purpose Power | 6 ns | 1.6ns | 9.2 ns | 7.5 ns | 900mA | 30V | 150V | SILICON | SWITCHING | 5.5V | 2W Ta | 0.9A | 7A | 9.5 mJ | 150V | N-Channel | 88pF @ 25V | 5.5 V | 1.2 Ω @ 540mA, 10V | 5.5V @ 250μA | 900mA Ta | 6.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRLHS6342TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlhs6342trpbf-datasheets-3444.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | Lead Free | 6 | 12 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | Single | 2.1W | 1 | FET General Purpose Power | 4.9 ns | 13ns | 13 ns | 19 ns | 8.7A | 12V | SILICON | DRAIN | SWITCHING | 2.1W Ta | 30V | N-Channel | 1019pF @ 25V | 1.1 V | 15.5m Ω @ 8.5A, 4.5V | 1.1V @ 10μA | 8.7A Ta 19A Tc | 11nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| XR46000ESETR | MaxLinear, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/maxlinearinc-xr46000esetr-datasheets-3299.pdf | TO-261-4, TO-261AA | 16 Weeks | 600V | 20W Tc | N-Channel | 170pF @ 25V | 8 Ω @ 750mA, 10V | 4V @ 250μA | 1.5A Tc | 7.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7615CDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si7615cdnt1ge3-datasheets-3458.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 20V | 33W Tc | P-Channel | 3860pF @ 10V | 9m Ω @ 12A, 4.5V | 1V @ 250μA | 35A Tc | 63nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3383-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | /files/onsemiconductor-mch3383tlw-datasheets-3406.pdf | 3-SMD, Flat Lead | Lead Free | 3 | 5 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1W Ta | 0.069Ohm | P-Channel | 1010pF @ 6V | 69m Ω @ 1.5A, 2.5V | 800mV @ 1mA | 3.5A Ta | 6.2nC @ 2.5V | 0.9V 2.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC3982TTR | IXYS Integrated Circuits Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~110°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/ixysintegratedcircuitsdivision-cpc3982ttr-datasheets-3606.pdf | TO-236-3, SC-59, SOT-23-3 | 6 Weeks | 800V | 400mW Ta | N-Channel | 20pF @ 25V | 380 Ω @ 20mA, 0V | Depletion Mode | 0V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6016LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmt6016lss13-datasheets-2912.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 23 Weeks | 73.992255mg | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 3.4 ns | 5.2ns | 7 ns | 13 ns | 9.2A | 20V | SILICON | SWITCHING | 1.5W Ta | 7.5A | 60A | 60V | N-Channel | 864pF @ 30V | 18m Ω @ 10A, 10V | 2.5V @ 250μA | 9.2A Ta | 17nC @ 10V | 4.5V 10V | ±20V |
