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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| V15PM45-M3/H | Vishay Semiconductor Diodes Division | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm45m3h-datasheets-5688.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3000pF @ 4V 1MHz | 45V | 700μA @ 45V | 600mV @ 15A | 15A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30K45HM3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v30k45m3h-datasheets-5794.pdf | 8-PowerTDFN | 10 Weeks | FlatPAK (5x6) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 4000pF @ 4V 1MHz | 45V | 2mA @ 45V | 630mV @ 30A | 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15P8-M3/86A | Vishay Semiconductor Diodes Division | $0.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p8m386a-datasheets-5768.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 15A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80V | 220A | 1200μA | TO-277A | Schottky | 80V | 4.6A | 1 | 1.2mA @ 80V | 660mV @ 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| V15PM10HM3/H | Vishay Semiconductor Diodes Division | $0.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm10hm3h-datasheets-5956.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 400μA | TO-277A | Schottky | 220A | 1 | 4A | 100V | 400μA @ 100V | 750mV @ 15A | 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| V15PM45HM3/H | Vishay Semiconductor Diodes Division | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm45m3h-datasheets-5688.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 3000pF @ 4V 1MHz | 45V | 700μA @ 45V | 600mV @ 15A | 15A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS15P3S-M3/86A | Vishay Semiconductor Diodes Division | $0.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss15p3sm386a-datasheets-5928.pdf | TO-277, 3-PowerDFN | Lead Free | 3 | 10 Weeks | Unknown | 3 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | DUAL | FLAT | SS15 | 3 | Common Cathode | 1 | Rectifier Diodes | 15A | 570mV | 40A | 200μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 1mA | 30V | 280A | TO-277A | Schottky | 30V | 15A | 1 | 1mA @ 30V | 570mV @ 15A | 200°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| BYW86TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | Axial | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw82tr-datasheets-2018.pdf | 3A | SOD-64, Axial | 40pF | 4mm | 4.3mm | 4.3mm | 17 Weeks | 857.998317mg | 2 | Silver, Tin | No | 35A | 1kV | Single | SOD-64 | 3A | 1V | 100A | Standard Recovery >500ns, > 200mA (Io) | 1μA | 1kV | 100A | 7.5 μs | 6 μs | Avalanche | 1kV | 3A | 1kV | 60pF @ 4V 1MHz | 1000V | 1μA @ 800V | 1V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| GI751-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gi752e354-datasheets-1934.pdf | P600, Axial | 2 | 18 Weeks | 600 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI751 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 6A | 1.25V | 400A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 400A | 100V | 2.5 μs | 2.5 μs | Standard | 100V | 6A | 1 | 6A | 150pF @ 4V 1MHz | 5μA @ 100V | 900mV @ 6A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| UF1JLWHRVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | SOD-123W | 16 Weeks | SOD-123W | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 15pF @ 4V 1MHz | 600V | 1μA @ 600V | 1.5V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAT43W-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microcommercialco-bat42wtp-datasheets-9226.pdf | SOD-123 | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.70 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | BAT43W | 2 | 125°C | 10 | 1 | Not Qualified | R-PDSO-G2 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.2W | 30V | 5ns | Schottky | 0.2A | 7pF @ 1V 1MHz | 30V | 500nA @ 25V | 1V @ 200mA | 200mA DC | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| P600G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-p600je354-datasheets-7002.pdf | P600, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | P600G | 2 | Single | 1 | Rectifier Diodes | 22A | 1.3V | 400A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 400A | 400V | 2.5 μs | 2.5 μs | Standard | 400V | 6A | 1 | 6A | 150pF @ 4V 1MHz | 5μA @ 400V | 900mV @ 6A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| GI752-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-gi752e354-datasheets-1934.pdf | P600, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI752 | 2 | Single | 1 | Rectifier Diodes | 6A | 1.25V | 400A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 400A | 200V | 2.5 μs | 2.5 μs | Standard | 200V | 6A | 1 | 6A | 150pF @ 4V 1MHz | 5μA @ 200V | 900mV @ 6A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| GI754-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gi752e354-datasheets-1934.pdf | P600, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI754 | 2 | Single | 1 | Rectifier Diodes | 22A | 1.25V | 400A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 400A | 480V | 2.5 μs | 2.5 μs | Standard | 400V | 6A | 1 | 6A | 150pF @ 4V 1MHz | 5μA @ 400V | 900mV @ 6A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| V30K45-M3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v30k45m3h-datasheets-5794.pdf | 8-PowerTDFN | 10 Weeks | FlatPAK (5x6) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 4000pF @ 4V 1MHz | 45V | 2mA @ 45V | 630mV @ 30A | 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GI756-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gi752e354-datasheets-1934.pdf | P600, Axial | 2 | 18 Weeks | 600 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 6A | 8541.10.00.80 | e3 | Matte Tin (Sn) | 600V | WIRE | GI756 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 6A | 1.25V | 400A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 400A | 600V | 2.5 μs | 2.5 μs | Standard | 600V | 6A | 1 | 150pF @ 4V 1MHz | 5μA @ 600V | 900mV @ 6A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| V12PM15-M3/H | Vishay Semiconductor Diodes Division | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v12pm15m3h-datasheets-5656.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 860pF @ 4V 1MHz | 150V | 250μA @ 150V | 1.08V @ 12A | 12A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15PM6HM3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm6m3h-datasheets-5628.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2300pF @ 4V 1MHz | 60V | 1.2mA @ 60V | 640mV @ 15A | 15A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15PM6-M3/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15pm6m3h-datasheets-5628.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2300pF @ 4V 1MHz | 60V | 1.2mA @ 60V | 640mV @ 15A | 15A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVBD360VT4G |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGP30K-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-rgp30me354-datasheets-9202.pdf | 5.3mm | DO-201AD, Axial | 9.5mm | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP30K | 2 | Single | 1 | Rectifier Diodes | 3A | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 125A | 800V | 500 ns | 500 ns | Standard | 800V | 3A | 1 | 3A | 5μA @ 800V | 1.3V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| BY228TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 140°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-by228tr-datasheets-5078.pdf | 3A | SOD-64, Axial | 4mm | 4.3mm | 4.3mm | 17 Weeks | 2 | Silver, Tin | No | Single | 140°C | SOD-64 | 3A | 1.5V | 50A | Standard Recovery >500ns, > 200mA (Io) | 50A | 2μA | 1.65kV | 50A | 1.5kV | 20 μs | 20 μs | Avalanche | 1.5kV | 3A | 1500V | 5μA @ 1500V | 1.5V @ 5A | 3A | 140°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BYM36E-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-bym36etap-datasheets-5834.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | 2.9A | 1.78V | 65A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 65A | 1kV | 150 ns | 150 ns | Avalanche | 1kV | 2.9A | 1 | 1000V | 5μA @ 1000V | 1.78V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| MUR130G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mur110rlg-datasheets-6834.pdf | 300V | 1A | DO-204AL, DO-41, Axial | 6.35mm | 6.35mm | 76.2mm | Lead Free | 2 | 2 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | WIRE | 260 | MUR130 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1A | 1.25V | 35A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35A | 5μA | 300V | 35A | 300V | 75 ns | 75 ns | Standard | 300V | 1A | 5μA @ 300V | 1.25V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| BY228-15TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 140°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-by22815tr-datasheets-9278.pdf | SOD-64, Axial | 17 Weeks | 2 | Silver, Tin | No | Single | SOD-64 | 3A | 1.5V | 50A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1.2kV | 50A | 1.2kV | 20 ns | 20 μs | Avalanche | 1.2kV | 3A | 1200V | 5μA @ 1200V | 1.5V @ 5A | 3A | 140°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NSHS05A065 | Kyocera International Inc. Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | DO-214AB, SMC | 14 Weeks | nSMC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 65V | 100μA @ 65V | 640mV @ 5A | 5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMEG045T150EIPDZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/nexperiausainc-pmeg045t150eipdz-datasheets-5853.pdf | TO-277, 3-PowerDFN | 3 | 4 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | AEC-Q101; IEC-60134 | YES | DUAL | FLAT | 3 | 175°C | 1 | R-PDSO-F3 | 15A | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.66W | 45V | 98μA | 49ns | Schottky | 1 | 21A | 1.7nF @ 1V 1MHz | 45V | 98μA @ 45V | 510mV @ 15A | 15A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGP30M-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-rgp30me354-datasheets-9202.pdf | DO-201AD, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP30M | 2 | Single | 1 | Rectifier Diodes | 1.3V | 125A | 5μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 125A | 500 ns | 500 ns | Standard | 1kV | 3A | 1 | 3A | 1000V | 5μA @ 1000V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| RGP30J-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-rgp30me354-datasheets-9202.pdf | DO-201AD, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP30J | 2 | Single | 1 | Rectifier Diodes | 1.3V | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 125A | 600V | 250 ns | 250 ns | Standard | 600V | 3A | 1 | 3A | 5μA @ 600V | 1.3V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| NRVTS1045EMFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/onsemiconductor-nrvts1045emfst1g-datasheets-5397.pdf | 8-PowerTDFN, 5 Leads | 5.9mm | 1.05mm | 4.9mm | Lead Free | 5 | 6 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 3 days ago) | yes | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | Single | 1 | Rectifier Diodes | 10A | 480mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 210A | 50μA | 45V | Schottky | 45V | 10A | 1 | 50μA @ 45V | 600mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| V12PM45-M3/H | Vishay Semiconductor Diodes Division | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-v12pm45m3h-datasheets-5525.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2350pF @ 4V 1MHz | 45V | 500μA @ 45V | 600mV @ 12A | 12A | -40°C~175°C |
