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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Outside Diameter | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| S4PGHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | AVALANCHE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s4pjm386a-datasheets-0490.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 4A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 100A | TO-277A | 2.5 μs | Standard | 400V | 4A | 1 | 30pF @ 4V 1MHz | 10μA @ 400V | 1.1V @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| BYW56-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | Axial | 175°C | -55°C | ROHS3 Compliant | 2006 | /files/vishaysemiconductordiodesdivision-byw56tr-datasheets-1194.pdf | SOD-57, Axial | 18pF | 4mm | 3.6mm | 3.6mm | 2 | 12 Weeks | Unknown | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50A | 1μA | 1kV | 50A | 1kV | 4 μs | 4 μs | Avalanche | 1kV | 2A | 1 | 2A | 1000V | 1μA @ 1000V | 1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| RS2GHE3_A/H | Vishay Semiconductor Diodes Division | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs2ke352t-datasheets-0618.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150 ns | Standard | 400V | 1.5A | 50A | 1 | 20pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ESH2D-E3/52T | Vishay Semiconductor Diodes Division | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh2de35bt-datasheets-4165.pdf | DO-214AA, SMB | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | ESH2D | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 930mV | 60A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 60A | 200V | 35 ns | 25 ns | Standard | 200V | 2A | 1 | 2A | 2μA @ 200V | 930mV @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| BYW34-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 200 ns | 200 ns | Avalanche | 400V | 2A | 1 | 2A | 5μA @ 400V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| SBYV28-100-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-sbyv2850e354-datasheets-4754.pdf | DO-201AD, Axial | Lead Free | 2 | 8 Weeks | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SBYV28-100 | 2 | 1 | Rectifier Diodes | 3.5A | 1.1V | 90A | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 90A | 100V | 20 ns | 20 ns | Standard | 100V | 3.5A | 1 | 20pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 3.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| BYW36-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 200 ns | 200 ns | Avalanche | 600V | 2A | 1 | 2A | 5μA @ 600V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| GF1MHE3/67A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount, Through Hole | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gf1me367a-datasheets-0930.pdf | DO-214BA | 2 | 16 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | GF1M | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.2V | 30A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 5μA | 1kV | 30A | 1kV | 2 μs | 3 μs | Standard | 1kV | 1A | 1A | 1000V | 5μA @ 1000V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| SB560A-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-sb540ae354-datasheets-6400.pdf | 5.3mm | DO-201AD, Axial | 9.5mm | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB560 | 2 | Single | 1 | Rectifier Diodes | 5A | 700mV | 150A | 500μA | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 60V | 150A | Schottky | 60V | 5A | 1 | 5A | 500μA @ 60V | 700mV @ 5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| ESH1B-E3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-esh1be361t-datasheets-4197.pdf | DO-214AC, SMA | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 900mV | 50A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 50A | 100V | 25 ns | 25 ns | Standard | 100V | 1A | 1A | 1μA @ 100V | 900mV @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| MBR15200STR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-277, 3-PowerDFN | 6 Weeks | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 5V 1MHz | 200V | 1mA @ 200V | 920mV @ 15A | 15A | -55°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR550APFRLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | RoHS Compliant | 2008 | /files/onsemiconductor-mur550apfrlg-datasheets-4710.pdf | 500V | 5A | DO-201AA, DO-27, Axial | Lead Free | 2 | 8 Weeks | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NO | WIRE | MUR550 | 2 | Single | 1 | Rectifier Diodes | 5A | 5A | 1.15V | 75A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 85A | 5μA | 520V | 85A | 520V | 95 ns | 95 ns | Standard | 520V | 5A | 1 | 5μA @ 520V | 1.15V @ 5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| RS2B-E3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-rs2ke352t-datasheets-0618.pdf | 100V | 2A | DO-214AA, SMB | 20pF | 2.44mm | 4.57mm | Lead Free | 2 | 11 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | RS2B | 2 | Single | 30 | 1 | Rectifier Diodes | 1.5A | 1.5A | 1.3V | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 5μA | 100V | 50A | 100V | 150 ns | 150 ns | Standard | 100V | 1.5A | 1 | 20pF @ 4V 1MHz | 5μA @ 100V | 1.3V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| BYG24G-E3/TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byg24je3tr-datasheets-3713.pdf | DO-214AC, SMA | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 15A | 8541.10.00.80 | e3 | 400V | DUAL | C BEND | 260 | BYG24G | 2 | Single | 40 | 1 | Rectifier Diodes | 1.5A | 1.25V | 30A | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 30A | 400V | 140 ns | 140 ns | Avalanche | 400V | 1.5A | 1 | 1μA @ 400V | 1.25V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| MBR1045STR | SMC Diode Solutions | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-277, 3-PowerDFN | 6 Weeks | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 1mA @ 45V | 500mV @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RBR5LAM30BTFTR | ROHM Semiconductor | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rbr5lam30btftr-datasheets-4647.pdf | SOD-128 | 2 | 20 Weeks | HIGH RELIABILITY | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 150μA | 0.49V | Schottky | 100A | 1 | 5A | 30V | 150μA @ 30V | 5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG24D-E3/TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byg24je3tr-datasheets-3713.pdf | DO-214AC, SMA | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | BYG24D | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1.5A | 1.25V | 30A | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 1μA | 200V | 30A | 200V | 140 ns | 140 ns | Avalanche | 200V | 1.5A | 1 | 1μA @ 200V | 1.25V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| BY268TR | Vishay Semiconductor Diodes Division | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by268tr-datasheets-4752.pdf | 800A | SOD-57, Axial | 12 Weeks | 2 | Silver, Tin | No | Single | SOD-57 | 800mA | 1.25V | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 2μA | 1.4kV | 20A | 1.4kV | 400 ns | 400 ns | Standard | 1.4kV | 800mA | 1400V | 2μA @ 1400V | 1.25V @ 400mA | 800mA | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF1200-TAP | Vishay Semiconductor Diodes Division | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf1600tr-datasheets-7193.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1A | 3.4V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.2kV | 30A | 1.2kV | 75 ns | 75 ns | Standard | 1.2kV | 1A | 1A | 1200V | 5μA @ 1200V | 3.4V @ 1A | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| SBYV28-50-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-sbyv2850e354-datasheets-4754.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | 1 | Rectifier Diodes | 3.5A | 1.1V | 90A | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 90A | 50V | 20 ns | 20 ns | Standard | 50V | 3.5A | 1 | 20pF @ 4V 1MHz | 5μA @ 50V | 1.1V @ 3.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| BY448TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | Axial | 140°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-by448tr-datasheets-0720.pdf | SOD-57, Axial | 4.2mm | 3.6mm | 3.6mm | 2 | 12 Weeks | Unknown | 3.81 mm | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1.6V | 30A | ISOLATED | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 30A | 3μA | 1.5kV | 30A | 1.5kV | 20 μs | 20 μs | Avalanche | 1.5kV | 2A | 1 | 2A | 1500V | 3μA @ 1200V | 1.6V @ 3A | 140°C Max | |||||||||||||||||||||||||||||||||||
| RF201LAM4STFTR | ROHM Semiconductor | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rf201lam4stftr-datasheets-4627.pdf | SOD-128 | 20 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | Standard | 400V | 1μA @ 400V | 1.2V @ 1.5A | 1.5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYM13-40-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 5.2mm | 2.67mm | 2.67mm | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM13-40 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 500mV | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 500μA | 40V | 30A | Schottky | 40V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 40V | 500mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||
| BYW32-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | PATENTED DEVICE, METALLURGICALLY BONDED | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 200 ns | 200 ns | Avalanche | 200V | 2A | 1 | 2A | 5μA @ 200V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| BY253P-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-by254pe354-datasheets-4134.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | BY253 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 150A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 150A | 600V | 3 μs | 3 μs | Standard | 600V | 3A | 1 | 3A | 40pF @ 4V 1MHz | 5μA @ 600V | 1.1V @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| PMEG030V030EPDZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nexperiausainc-pmeg030v030epdz-datasheets-4513.pdf | TO-277, 3-PowerDFN | 3 | 4 Weeks | FREE WHEELING DIODE | AEC-Q101; IEC-60134 | YES | DUAL | FLAT | 3 | 175°C | 1 | R-PDSO-F3 | 3A | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.66W | 30V | 150μA | 12ns | Schottky | 1 | 495pF @ 1V 1MHz | 30V | 150μA @ 30V | 450mV @ 3A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR1560STR | SMC Diode Solutions | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-277, 3-PowerDFN | 6 Weeks | TO-277B | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 850pF @ 5V 1MHz | 60V | 200μA @ 60V | 590mV @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS3BJ-M3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-as3bjm352t-datasheets-4541.pdf | DO-214AA, SMB | 2 | 22 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.05V | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 90A | 1.5 μs | Standard | 600V | 3A | 1 | 2A | 40pF @ 4V 1MHz | 20μA @ 600V | 1.05V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| BYW54-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-byw56tr-datasheets-1194.pdf | 2A | 3.6mm | SOD-57, Axial | 4mm | 2 | 12 Weeks | Unknown | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | BYW54 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50A | 1μA | 600V | 50A | 600V | 4 μs | 4 μs | Avalanche | 600V | 2A | 1 | 2A | 1μA @ 1000V | 1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| PMEG050V030EPDZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nexperiausainc-pmeg050v030epdz-datasheets-4559.pdf | TO-277, 3-PowerDFN | 3 | 4 Weeks | FREE WHEELING DIODE | AEC-Q101; IEC-60134 | YES | DUAL | FLAT | 3 | 175°C | 1 | R-PDSO-F3 | 3A | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.66W | 50V | 100μA | 12ns | Schottky | 1 | 350pF @ 1V 1MHz | 50V | 100μA @ 50V | 530mV @ 3A | 3A DC | 175°C Max |
