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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| STTH1L06UFY | STMicroelectronics | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stth1l06ufy-datasheets-3996.pdf | DO-221AA, SMB Flat Leads | 2 | 8 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | DUAL | NOT SPECIFIED | STTH1 | Single | NOT SPECIFIED | 1 | 1A | 1.4V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20A | 600V | 60 ns | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.4V @ 1A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-3EJH02-M3/6B | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs3ejh02m36b-datasheets-3998.pdf | DO-221AC, SMA Flat Leads | 2 | 11 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 3A | 930mV | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 85A | 200V | 30 ns | Standard | 200V | 3A | 1 | 3A | 2μA @ 200V | 930mV @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| EC11FS2 | Kyocera International Inc. Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | DO-214AC, SMA | 14 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | Standard | 200V | 10μA @ 200V | 980mV @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBA360LR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdba360lrhf-datasheets-3927.pdf | DO-214AC, SMA | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | DUAL | C BEND | 260 | CDBA360 | 150°C | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 60V | 3A | 125A | 1 | 3A | 250pF @ 4V 1MHz | 500μA @ 60V | 550mV @ 3A | 3A DC | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||
| RGL34A-E3/98 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-rgl34je398-datasheets-1957.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 1.3V | 10A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 10A | 150 ns | 150 ns | Standard | 50V | 500mA | 0.5A | 4pF @ 4V 1MHz | 5μA @ 50V | 1.3V @ 500mA | -65°C~175°C | ||||||||||||||||||||||||||||
| RB450UMTL | ROHM Semiconductor | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rb450umtl-datasheets-4036.pdf | SC-85 | 3 | 12 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.70 | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | Small Signal =< 200mA (Io), Any Speed | SILICON | 45V | Schottky | 0.1A | 6pF @ 10V 1MHz | 40V | 10μA @ 40V | 550mV @ 100mA | 100mA | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| NRVUS220VT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-nrvus220vt3g-datasheets-4026.pdf | DO-214AA, SMB | 2 | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | DUAL | J BEND | 175°C | 1 | R-PDSO-J2 | SINGLE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 2μA | 35ns | Standard | 40A | 1 | 2A | 200V | 2μA @ 200V | 950mV @ 2A | 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N5401-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-1n5407e354-datasheets-0147.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 1N5401 | 2 | Single | 1 | Rectifier Diodes | 3A | 1.2V | 200A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 200A | 100V | Standard | 100V | 3A | 1 | 3A | 30pF @ 4V 1MHz | 5μA @ 100V | 1.2V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||
| 1N5407-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-1n5407e354-datasheets-0147.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 1N5407 | 2 | Single | 1 | Rectifier Diodes | 3A | 1.2V | 200A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 200A | 800V | Standard | 800V | 3A | 1 | 3A | 30pF @ 4V 1MHz | 5μA @ 800V | 1.2V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||
| 1N5406-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-1n5407e354-datasheets-0147.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N5406 | 2 | Single | 1 | Rectifier Diodes | 3A | 1.2V | 200A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 5μA | 600V | 200A | 600V | Standard | 600V | 3A | 1 | 3A | 30pF @ 4V 1MHz | 5μA @ 600V | 1.2V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||
| P300K-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-p300ke354-datasheets-4081.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 200A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 200A | 800V | 2 μs | 2 μs | Standard | 800V | 3A | 1 | 3A | 5μA @ 800V | 1.2V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||||
| EP10QY04 | Kyocera International Inc. Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-123 | 14 Weeks | SOD-123 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 1mA @ 40V | 570mV @ 1A | 1A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB2H100-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishay-sb2h100e354-datasheets-3096.pdf | DO-204AC, DO-15, Axial | 2 | 10 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | No | 8541.10.00.80 | e3 | WIRE | SB2H100 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 75A | 10μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 75A | Schottky | 100V | 2A | 1 | 2A | 10μA @ 100V | 790mV @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| PMEG60T30ELPX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmeg60t30elpx-datasheets-3791.pdf | SOD-128 | 13 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | Schottky | 560pF @ 1V 1MHz | 60V | 1.8μA @ 60V | 620mV @ 3A | 3A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GL41J-E3/96 | Vishay Semiconductor Diodes Division | $0.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | DO-213AB, MELF (Glass) | 5.2mm | 2.67mm | 2.67mm | Lead Free | 19 Weeks | 2 | No | GL41J | Single | DO-213AB | 1A | 1.1V | 30A | Standard Recovery >500ns, > 200mA (Io) | 30A | 10μA | 600V | 30A | 600V | Standard | 600V | 1A | 8pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| ES2B-E3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | DO-214AA, SMB | Lead Free | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | ES2B | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 900mV | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 50A | 100V | 30 ns | 30 ns | Standard | 100V | 2A | 1 | 2A | 18pF @ 4V 1MHz | 10μA @ 100V | 900mV @ 2A | -55°C~150°C | ||||||||||||||||||||||||||
| EP04RA60 | Kyocera International Inc. Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-123 | 2 | 14 Weeks | EAR99 | 8541.10.00.70 | YES | DUAL | GULL WING | 150°C | 1 | Not Qualified | R-PDSO-G2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 40ns | Standard | 0.3A | 600V | 10μA @ 600V | 1.32V @ 400mA | 400mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-2EYH01-M3/H | Vishay Semiconductor Diodes Division | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs2eyh01m3h-datasheets-3718.pdf | DO-221AC, SMA Flat Leads | 14 Weeks | SlimSMAW (DO-221AD) | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | Standard | 12pF @ 200V | 100V | 2μA @ 100V | 930mV @ 2A | 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GL41YHE3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | GL41Y | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.2V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 30A | 10μA | 1.6kV | 30A | 1.6kV | 3 μs | Standard | 1.6kV | 1A | 1A | 8pF @ 4V 1MHz | 1600V | 10μA @ 1600V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||
| EGP10GE-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | No | EGP10G | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 50 ns | 50 ns | Standard | 400V | 1A | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.25V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| BYM07-150-E3/98 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY; FREE WHEELING DIODE | Tin | No | 8541.10.00.70 | e3 | END | WRAP AROUND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 1.25V | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 10A | 150V | 50 ns | 50 ns | Standard | 150V | 500mA | 0.5A | 7pF @ 4V 1MHz | 5μA @ 150V | 1.25V @ 500mA | -65°C~175°C | ||||||||||||||||||||||||||||
| MPG06J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mpg06ge354-datasheets-8621.pdf | MPG06, Axial | Lead Free | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | MPG06 | 3 | Single | 1 | Rectifier Diodes | 1A | 1.1V | 40A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 40A | 800V | 600 ns | 600 ns | Standard | 600V | 1A | 1A | 10pF @ 4V 1MHz | 5μA @ 600V | 1.1V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||
| ER1Q-LTP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-er1qltp-datasheets-3771.pdf | DO-214AA, SMB | 8 Weeks | EAR99 | YES | 260 | 150°C | 10 | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 1200V | 150ns | Standard | 30A | 1A | 45pF @ 4V 1MHz | 1200V | 5μA @ 1200V | 1.85V @ 1A | 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AU1PK-M3/84A | Vishay Semiconductor Diodes Division | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au1pdm384a-datasheets-3222.pdf | DO-220AA | Unknown | 2 | Tin | No | AU1PK | Single | DO-220AA (SMP) | 1A | 1.85V | 25A | Fast Recovery =< 500ns, > 200mA (Io) | 25A | 1μA | 800V | 25A | 800V | 75 ns | 75 ns | Avalanche | 800V | 1A | 7.5pF @ 4V 1MHz | 800V | 1μA @ 800V | 1.85V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| RBR2LAM60BTFTR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rbr2lam60btftr-datasheets-3892.pdf | SOD-128 | 2 | 20 Weeks | HIGH RELIABILITY | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | 2A | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 150μA | 0.52V | Schottky | 1 | 2A | 60V | 150μA @ 60V | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| CUHS20S40,H3F | Toshiba Semiconductor and Storage | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2-SMD, Flat Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 290pF @ 0V 1MHz | 40V | 300μA @ 40V | 470mV @ 2A | 2A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3M-E3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | Lead Free | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | S3M | 2 | Single | 30 | 1 | Rectifier Diodes | 3A | 1.15V | 100A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 100A | 1kV | 2.5 μs | 2.5 μs | Standard | 1kV | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||||||||
| EGL34B-E3/98 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY; FREE WHEELING DIODE | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | EGL34B | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 1.25V | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 10A | 100V | 50 ns | 50 ns | Standard | 100V | 500mA | 0.5A | 7pF @ 4V 1MHz | 5μA @ 100V | 1.25V @ 500mA | -65°C~175°C | |||||||||||||||||||||||||||
| SF2DDF-13 | Diodes Incorporated | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-sf2ddf13-datasheets-3916.pdf | 2-SMD, Flat Lead | 2 | 16 Weeks | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 5μA | 35ns | Standard | 50A | 1 | 2A | 50pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| BYM11-400-E3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 5.2mm | 2.67mm | 2.67mm | Lead Free | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | BYM11-400 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.3V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 5μA | 400V | 30A | 400V | 150 ns | 150 ns | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.3V @ 1A | -65°C~175°C |
