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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-50SQ080G | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50sq080gtr-datasheets-8070.pdf | DO-204AR, Axial | 2 | EAR99 | FREE WHEELING DIODE | NO | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80V | 150μA | Schottky | 1900A | 1 | 500pF @ 5V 1MHz | 80V | 150μA @ 60V | 660mV @ 5A | 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-STD170M12MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSB20L45-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsb20l45m354-datasheets-6566.pdf | P600, Axial | 2 | 17 Weeks | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | IEC-61000-4-2; IEC-61215 | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 45V | 6.5A | 250A | 1 | 7.5A | 2050pF @ 4V 1MHz | 45V | 1.2mA @ 45V | 580mV @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-STT170M14MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-SDE270M20MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-31DQ10G | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs31dq10gtr-datasheets-8118.pdf | DO-201AD, Axial | 2 | EAR99 | FREE WHEELING DIODE | unknown | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | Schottky | 370A | 1 | 110pF @ 5V 1MHz | 100V | 100μA @ 100V | 850mV @ 3A | 3.3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VIT3080SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vit3080sm34w-datasheets-3827.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | MATTE TIN | SINGLE | 3 | Common Anode | 1 | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 80V | 200A | Schottky | 60V | 10A | 1 | 700μA @ 60V | 900mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| VSB15L45-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vsb15l45m354-datasheets-8522.pdf | P600, Axial | 2 | 17 Weeks | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4000μA | Schottky | 45V | 7A | 200A | 1 | 7A | 1430pF @ 4V 1MHz | 45V | 4mA @ 45V | 570mV @ 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VI30120SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi30120shm34w-datasheets-0012.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 120V | 300A | Schottky | 120V | 30A | 1 | 500μA @ 120V | 1.1V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| VS-SDC270M08MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VI20150SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20150sm34w-datasheets-3848.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 150V | 160A | Schottky | 150V | 20A | 1 | 250μA @ 150V | 1.43V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||
| CCS15S30,L3IDTF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | 0603 (1608 Metric) | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 1.5A | 200pF @ 0V 1MHz | 20V | 500μA @ 30V | 400mV @ 1A | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6843CCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/681 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | 3-SMD, Flat Lead | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e4 | Gold (Au) - with Nickel (Ni) barrier | MIL-19500 | BOTTOM | 3 | Common Cathode | 2 | Rectifier Diodes | Qualified | 10A | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | Schottky | 1 | 275pF @ 5V 1MHz | 10μA @ 100V | 1.27V @ 30A | 15A | -65°C~150°C | ||||||||||||||||||||||||||||||
| UH6PJHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh6pjm387a-datasheets-3254.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREEWHEELING DIODE | No | 8541.10.00.80 | DUAL | FLAT | 3 | Common Anode | 1 | Rectifier Diodes | 6A | 3V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 80A | TO-277A | 45 ns | Standard | 600V | 6A | 1 | 6A | 30pF @ 4V 1MHz | 10μA @ 600V | 3V @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||
| UFT3140C | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-204AA, TO-3 | 2 | no | EAR99 | HIGH RELIABILITY | 30A | 8541.10.00.80 | e0 | TIN LEAD | 400V | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 2 | Not Qualified | O-MBFM-P2 | COMMON CATHODE, 2 ELEMENTS | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50 ns | Standard | 400V | 30A | 1 | 15mA @ 400V | 1.1V @ 15A | 30A DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-50SQ100G | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs50sq080gtr-datasheets-8070.pdf | DO-204AR, Axial | 2 | 2 | EAR99 | FREE WHEELING DIODE | No | WIRE | Single | 1 | 5A | 1.9kA | 150μA | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 100V | 1.9kA | Schottky | 100V | 5A | 1 | 500pF @ 5V 1MHz | 150μA @ 60V | 660mV @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-150SQ030 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs150sq045tr-datasheets-7996.pdf | DO-204AR, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 30V | Standard | 2150A | 1 | 15A | 900pF @ 5V 1MHz | 30V | 1.75mA @ 30V | 540mV @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| UH3D-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh3cm39at-datasheets-9838.pdf | DO-214AB, SMC | 2 | yes | EAR99 | FREE WHEELING DIODE, SOFT FACTOR IS 0.2 | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 175°C | 30 | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 40 ns | Standard | 200V | 2.5A | 80A | 1 | 16pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.05V @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VI40100GHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi40100gm34w-datasheets-9698.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSIP-T3 | 40A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 100V | 200A | Schottky | 100V | 20A | 1 | 500μA @ 100V | 810mV @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||
| VS-SDD270M16MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-SDD320M16MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE70PGHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se70pjhm3ai-datasheets-1595.pdf | TO-277, 3-PowerDFN | 3 | EAR99 | unknown | 8541.10.00.80 | DUAL | FLAT | 175°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-277A | 2.6 μs | Standard | 400V | 2.9A | 120A | 1 | 7A | 76pF @ 4V 1MHz | 20μA @ 400V | 1.05V @ 7A | 2.9A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-SDE270M12MPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VI20150SGHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20150sgm34w-datasheets-3677.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 150V | 140A | Schottky | 150V | 20A | 1 | 200μA @ 150V | 1.6V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||
| VS-150SQ040 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs150sq045tr-datasheets-7996.pdf | DO-204AR, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 2150A | 1 | 15A | 900pF @ 5V 1MHz | 40V | 1.75mA @ 40V | 540mV @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| JANTX1N6761-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/586 | WIRE | 2 | Single | 1 | Qualified | 1A | 690mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | Schottky | 1A | 70pF @ 5V 1MHz | 100μA @ 100V | 690mV @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| SE40PDHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se40pbm387a-datasheets-5498.pdf | TO-277, 3-PowerDFN | 3 | EAR99 | unknown | 8541.10.00.80 | DUAL | FLAT | 175°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | TO-277A | 2.2 μs | Standard | 200V | 2.4A | 60A | 1 | 28pF @ 4V 1MHz | 10μA @ 200V | 1.05V @ 2A | 2.4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| V30100SGHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi30100sgm34w-datasheets-3915.pdf | TO-220-3 | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Not Qualified | 30A | 1V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350μA | 100V | 250A | TO-220AB | Schottky | 100V | 30A | 1 | 350μA @ 100V | 1V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||
| FMCA-11065 | Sanken | $2.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-fmca11065-datasheets-9989.pdf | TO-220-2 Full Pack | Lead Free | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | ISOLATED | EFFICIENCY | No Recovery Time > 500mA (Io) | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 600V | 10A | 40A | 1 | 600V | 15μA @ 600V | 1.5V @ 10A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-20MQ100NPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20mq100ntrpbf-datasheets-2362.pdf | DO-214AC, SMA | 2 | Single | DO-214AC (SMA) | 910mV | 120A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 120A | Schottky | 100V | 2.1A | 38pF @ 10V 1MHz | 100V | 100μA @ 100V | 910mV @ 2A | 2.1A | -55°C~150°C |
