Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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UH6PD-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh6pdhm3ah-datasheets-8912.pdf | TO-277, 3-PowerDFN | 3 | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 6A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 90A | TO-277A | 140 ns | Standard | 200V | 6A | 1 | 6A | 80pF @ 4V 1MHz | 10μA @ 200V | 1.05V @ 6A | -55°C~175°C | ||||||||||||||||||||||||
1N6625E3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | A, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80 ns | Standard | 1.1kV | 1A | 1A | 1100V | 1μA @ 1000V | 1.95V @ 1.5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
VS-1N5820 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n5820tr-datasheets-8075.pdf | DO-201AD, Axial | 2 | EAR99 | FREE WHEELING DIODE | unknown | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20V | 2000μA | Schottky | 90A | 1 | 350pF @ 5V 1MHz | 20V | 2mA @ 20V | 475mV @ 3A | 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
JANTX1N3164 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/211 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | DO-205AB, DO-9, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | HIGH CURRENT CABLE | 1 | Single | 1 | Qualified | O-MUPM-H1 | 300A | 1.55V | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10mA | 200V | 6.25kA | Standard | 1 | 10mA @ 200V | 1.55V @ 940A | -65°C~200°C | |||||||||||||||||||||||||||||
UES706HR2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | Not Applicable | 150°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-ues706-datasheets-6065.pdf | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 20A | 1.25V | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 400V | 300A | 50 ns | Standard | 400V | 20A | 1 | 50μA @ 400V | 1.25V @ 20A | 20A DC | -55°C~150°C | ||||||||||||||||||||||||
JANTX1N6857-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/444 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | WIRE | 2 | Single | 1 | Qualified | 75mA | 750mV | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 20V | Schottky | 0.075A | 150nA @ 16V | 350mV @ 1mA | 150mA | -65°C~150°C | ||||||||||||||||||||||||||||||
UH3C-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh3cm39at-datasheets-9838.pdf | DO-214AB, SMC | 2 | 21 Weeks | yes | EAR99 | FREE WHEELING DIODE, SOFT FACTOR IS 0.2 | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 175°C | 30 | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 40 ns | Standard | 150V | 2.5A | 80A | 1 | 42pF @ 4V 1MHz | 150V | 5μA @ 150V | 1.05V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||
VIT2060GHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vt2060gm34w-datasheets-5093.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | MATTE TIN | SINGLE | 3 | Common Cathode | 2 | Not Qualified | 20A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 60V | 100A | Schottky | 60V | 10A | 1 | 700μA @ 60V | 900mV @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||
VI20120SGHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20120sgm34w-datasheets-3486.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 120V | 150A | Schottky | 120V | 20A | 1 | 250μA @ 120V | 1.33V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||
UES2602 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-ues2601-datasheets-0614.pdf | TO-204AA, TO-3 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | PIN/PEG | 2 | Single | 2 | Rectifier Diodes | O-MBFM-P2 | 30A | 930mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 100V | 400A | 35 ns | Standard | 100V | 30A | 1 | 20μA @ 100V | 930mV @ 15A | -55°C~175°C | ||||||||||||||||||||||||||||
V30120SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | TO-220-3 | 3 | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 120V | 300A | TO-220AB | Schottky | 120V | 30A | 1 | 500μA @ 120V | 1.28V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||
JANTX1N3890 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/304 | Stud | Stud Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/304 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 12A | 1.5V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 175A | 200 ns | Standard | 1 | 115pF @ 10V 1MHz | 10μA @ 100V | 1.5V @ 20A | -65°C~175°C | ||||||||||||||||||||||||||||
JANTX1N1614 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/162 | Stud | Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4459r-datasheets-0398.pdf | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 15A | 1.5V | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 200V | 100A | Standard | 1 | 50μA @ 200V | 1.5V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||
V20120SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20120sm34w-datasheets-3618.pdf | TO-220-3 | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300μA | 120V | 200A | TO-220AB | Schottky | 120V | 20A | 1 | 300μA @ 120V | 1.12V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||
UH3B-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh3cm39at-datasheets-9838.pdf | DO-214AB, SMC | 2 | 21 Weeks | yes | EAR99 | FREE WHEELING DIODE, SOFT FACTOR IS 0.2 | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 175°C | 30 | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 40 ns | Standard | 100V | 2.5A | 80A | 1 | 42pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.05V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||
1N5419E3 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 1μA | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||
JANTX1N1184 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 35A | CATHODE | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 500A | Standard | 1 | 5μs | 10μA @ 100V | 1.4V @ 110A | -65°C~175°C | ||||||||||||||||||||||||||||||
SS5P6HM3J/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss5p6m386a-datasheets-7181.pdf | TO-277, 3-PowerDFN | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 5A | 200pF @ 4V 1MHz | 60V | 150μA @ 60V | 690mV @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
SE40PJHM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se40pbm387a-datasheets-5498.pdf | TO-277, 3-PowerDFN | 3 | EAR99 | unknown | 8541.10.00.80 | DUAL | FLAT | 175°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | TO-277A | 2.2 μs | Standard | 600V | 2.4A | 60A | 1 | 28pF @ 4V 1MHz | 10μA @ 600V | 920mV @ 2A | 2.4A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||
VI30100SGHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi30100sgm34w-datasheets-3915.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 100V | 30A | 250A | 1 | 100V | 350μA @ 100V | 1V @ 30A | -40°C~150°C | ||||||||||||||||||||||||||||||||
RGP10MHM3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250 ns | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 800V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
SS5P9HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-ss5p10m386a-datasheets-7142.pdf | TO-277, 3-PowerDFN | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | 3 | Single | 1 | Not Qualified | R-PDSO-F3 | 5A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 15μA | TO-277A | Schottky | 90V | 5A | 1 | 5A | 130pF @ 4V 1MHz | 15μA @ 90V | 880mV @ 5A | -55°C~150°C | ||||||||||||||||||||||||||
VI20100SGHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20100sgm34w-datasheets-3278.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSIP-T3 | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350μA | 100V | 150A | Schottky | 100V | 20A | 1 | 350μA @ 100V | 1.07V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||
VIT1080SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vit1080sm34w-datasheets-3083.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Not Qualified | 10A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600μA | 80V | 100A | Schottky | 80V | 10A | 1 | 600μA @ 80V | 810mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||
UH1D-M3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh1dm35at-datasheets-9790.pdf | DO-214AC, SMA | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | Single | 30 | 1 | Not Qualified | R-PDSO-C2 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 30A | 30 ns | Standard | 200V | 1A | 1A | 17pF @ 4V 1MHz | 1μA @ 150V | 1.05V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||
RGP10J-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150 ns | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
VI30120SGHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi30120sgm34w-datasheets-4249.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 19 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | MATTE TIN | SINGLE | 3 | Common Anode | 1 | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 120V | 220A | Schottky | 120V | 30A | 1 | 500μA @ 120V | 1.28V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||
VI20100SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20100sm34w-datasheets-3786.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 19 Weeks | 3 | Common Anode | TO-262AA | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 100V | 250A | Schottky | 100V | 20A | 100V | 500μA @ 100V | 900mV @ 20A | 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
UH3D-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh3cm39at-datasheets-9838.pdf | DO-214AB, SMC | 2 | yes | EAR99 | FREE WHEELING DIODE, SOFT FACTOR IS 0.2 | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 175°C | 30 | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 40 ns | Standard | 200V | 2.5A | 80A | 1 | 42pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.05V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||
V10150SHM3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v10150se34w-datasheets-6897.pdf | TO-220-3 | 3 | 19 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | 10A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 150V | 120A | TO-220AB | Schottky | 150V | 10A | 1 | 150μA @ 150V | 1.2V @ 10A | -40°C~150°C |
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