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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-15ETH06SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vs15eth06strrpbf-datasheets-8022.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | MATTE TIN (SN) - WITH NICKEL (NI) BARRIER | GULL WING | 3 | Single | 1 | Rectifier Diodes | 15A | 2.1V | 120A | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120A | 50μA | 600V | 120A | 600V | 35 ns | 35 ns | Standard | 600V | 15A | 1 | 50μA @ 600V | 2.2V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||
| VS-10WT10FNTRL | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10wt10fntrr-datasheets-8108.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 10A | 400pF @ 5V 1MHz | 100V | 50μA @ 100V | 810mV @ 10A | 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ATS12PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20ets12m3-datasheets-1329.pdf | TO-220-3 | 8 Weeks | 3 | EAR99 | unknown | 8541.10.00.80 | 3 | Common Anode | 20A | 1.1V | Standard Recovery >500ns, > 200mA (Io) | 100μA | 1.2kV | 300A | Standard | 1.2kV | 20A | 1200V | 100μA @ 1200V | 1.1V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-10TQ045-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-10tq040-datasheets-7495.pdf | TO-220-2 | 10.66mm | 9.02mm | 4.82mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | 10A | unknown | 45V | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 10A | 670mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.05kA | 2mA | 45V | 1.05kA | Schottky | 45V | 10A | 1 | 2mA @ 45V | 570mV @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-18TT045-F | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs18tt045f-datasheets-8308.pdf | TO-220-2 | Lead Free | 2 | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 18A | 1350pF @ 5V 1MHz | 45V | 2mA @ 45V | 600mV @ 18A | 18A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-18TQ035-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs18tq035pbf-datasheets-9617.pdf | TO-220-2 | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2500μA | TO-220AC | Schottky | 35V | 18A | 390A | 1 | 1400pF @ 5V 1MHz | 35V | 2.5mA @ 35V | 600mV @ 18A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-15ETX06-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs15etx06pbf-datasheets-9552.pdf | TO-220-2 | 11 Weeks | 2 | EAR99 | unknown | NOT SPECIFIED | Single | NOT SPECIFIED | 3.2V | Fast Recovery =< 500ns, > 200mA (Io) | 170A | 22 ns | Standard | 600V | 15A | 50μA @ 600V | 3.2V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBRD320TRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrd340trrpbf-datasheets-1407.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | MATTE TIN | SINGLE | GULL WING | 3 | Common Anode | 1 | R-PSSO-G2 | 3A | 490A | 200μA | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 20V | 490A | TO-252AA | Schottky | 20V | 3A | 1 | 189pF @ 5V 1MHz | 200μA @ 20V | 600mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-MBRB1645TRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrb1645pbf-datasheets-9648.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | TO-263AB (D2PAK) | 16A | Fast Recovery =< 500ns, > 200mA (Io) | 200μA | 45V | 1.8kA | Schottky | 45V | 16A | 1400pF @ 5V 1MHz | 45V | 200μA @ 45V | 630mV @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS16STRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ews16strpbf-datasheets-8243.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | Common Anode | 10 | 1 | R-PSSO-G2 | 8A | 200A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 1.6kV | 200A | 1.6kV | TO-252AA | Standard | 1.6kV | 8A | 1 | 8A | 1600V | 50μA @ 1600V | 1.1V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| VS-20ATS08PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20ets12m3-datasheets-1329.pdf | TO-220-3 | 8 Weeks | 3 | EAR99 | unknown | 8541.10.00.80 | 3 | Common Anode | 20A | Standard Recovery >500ns, > 200mA (Io) | 100μA | 800V | 300A | Standard | 800V | 20A | 100μA @ 800V | 1.1V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-18TQ045-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs18tq035pbf-datasheets-9617.pdf | TO-220-2 | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2500μA | TO-220AC | Schottky | 45V | 18A | 390A | 1 | 1400pF @ 5V 1MHz | 45V | 2mA @ 45V | 600mV @ 18A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-8TQ100GSTRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100pbf-datasheets-9643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 3 | 175°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | Schottky | 850A | 1 | 8A | 500pF @ 5V 1MHz | 100V | 280μA @ 100V | 720mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-8TQ100GSTRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100pbf-datasheets-9643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 3 | 175°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | Schottky | 850A | 1 | 8A | 500pF @ 5V 1MHz | 100V | 280μA @ 100V | 720mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| VS-20ETF10SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20etf12spbf-datasheets-0451.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | EAR99 | 8541.10.00.80 | Common Anode | 355A | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 1kV | 95 ns | 400 ns | Standard | 1kV | 20A | 1000V | 100μA @ 1000V | 1.31V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF08SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20etf12spbf-datasheets-0451.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | Common Anode | 10 | 1 | R-PSSO-G2 | 20A | 1.31V | 355A | CATHODE | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 355A | 100μA | 800V | 355A | 800V | 400 ns | 400 ns | Standard | 800V | 20A | 1 | 100μA @ 800V | 1.31V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||
| VS-STPS20L15GTRLP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vsstps20l15gpbf-datasheets-9754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | GULL WING | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 20A | 700A | 10mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10mA | 15V | 700A | Schottky | 15V | 20A | 1 | 2000pF @ 5V 1MHz | 10mA @ 15V | 520mV @ 40A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||
| SRP300D-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp300j1-datasheets-3705.pdf | DO-201AD, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 150A | 150 ns | 150 ns | Standard | 200V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 200V | 1.3V @ 3A | -50°C~125°C | |||||||||||||||||||||||||||||||||||
| VS-8EWF12STRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ewf10strlpbf-datasheets-1344.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | Common Anode | 10 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.3V | 200A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 100μA | 1.2kV | 200A | 1.2kV | TO-252AA | 270 ns | 270 ns | Standard | 1.2kV | 8A | 1 | 8A | 1200V | 100μA @ 1200V | 1.3V @ 8A | -40°C~150°C | ||||||||||||||||||||||||
| VSB3200S-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | DO-204AC, DO-15, Axial | 2 | 17 Weeks | 2 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 3A | 1.4V | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 200V | 50A | Schottky | 200V | 3A | 1 | 3A | 170pF @ 4V 1MHz | 50μA @ 200V | 1.4V @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-8EWF12STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ewf10strlpbf-datasheets-1344.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | Common Anode | 10 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 200A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1.2kV | 200A | 1.2kV | TO-252AA | 270 ns | 270 ns | Standard | 1.2kV | 8A | 1 | 8A | 1200V | 100μA @ 1200V | 1.3V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||
| VS-MBRB745TRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 11 Weeks | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 3 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 7.5A | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 45V | 690A | Schottky | 45V | 7.5A | 1 | 100μA @ 45V | 570mV @ 7.5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-8EWS08STRLPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs8ews12strpbf-datasheets-1679.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | Common Anode | 10 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.1V | 200A | CATHODE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 50μA | 800V | 200A | 800V | TO-252AA | 25 ns | Standard | 800V | 8A | 1 | 8A | 50μA @ 800V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||
| S1JA-E3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s1je351t-datasheets-3731.pdf | DO-214AC, SMA | 4.5mm | 2.09mm | 2.79mm | 2 | S1J | Single | DO-214AC (SMA) | 1A | 1.1V | 30A | Standard Recovery >500ns, > 200mA (Io) | 30A | 3μA | 600V | 30A | 600V | 1 μs | 1 μs | Standard | 600V | 1A | 12pF @ 4V 1MHz | 600V | 1μA @ 600V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-10ETF10SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf10spbf-datasheets-8277.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | 8541.10.00.80 | e3 | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 1.33V | 160A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 185A | 1kV | 310 ns | 310 ns | Standard | 1kV | 10A | 1 | 1000V | 100μA @ 1000V | 1.33V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||
| VS-10WT10FN | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10wt10fntrr-datasheets-8108.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Unknown | 3 | No | 10A | 100V | Common Anode | TO-252, (D-Pak) | 10A | 890mV | 610A | 50μA | Fast Recovery =< 500ns, > 200mA (Io) | 610A | 50μA | 100V | 610A | 20 ns | Schottky | 100V | 10A | 100V | 50μA @ 100V | 810mV @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-10ETF02PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-10etf02-datasheets-4590.pdf | TO-220-2 | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | Single | 1 | R-PSFM-T2 | 10A | 160A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 200V | 160A | 200V | TO-220AC | 200 ns | 145 ns | Standard | 200V | 10A | 1 | 100μA @ 200V | 1.2V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| VS-10TQ035-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-10tq040-datasheets-7495.pdf | TO-220-2 | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | TO-220AC | Schottky | 35V | 10A | 1050A | 1 | 900pF @ 5V 1MHz | 35V | 2mA @ 40V | 570mV @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ06FNTRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30wq06fntrpbf-datasheets-9764.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | e3 | MATTE TIN | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 490A | 2mA | CATHODE | HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-252AA | Schottky | 60V | 3.5A | 1 | 145pF @ 5V 1MHz | 2mA @ 60V | 610mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VS-8EWS12STRRPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ews12strpbf-datasheets-1679.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | Common Anode | 10 | 1 | Rectifier Diodes | R-PSSO-G2 | 200A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50μA | 1.2kV | TO-252AA | Standard | 1.2kV | 8A | 150A | 1 | 8A | 1200V | 50μA @ 1200V | 1.1V @ 8A | -55°C~150°C |
