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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N5814 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 100V | 950mV @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| GP2D005A120C | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d005a120c-datasheets-8595.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 317pF @ 1V 1MHz | 1200V | 10μA @ 1200V | 1.8V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP60Z120E | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp60z120e-datasheets-8631.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 3581pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 60A | 60A DC | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D030A120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d030a120b-datasheets-8632.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1905pF @ 1V 1MHz | 1200V | 60μA @ 1200V | 1.8V @ 30A | 30A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP15S120A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp15s120a-datasheets-8634.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 895pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 15A | 15A DC | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3890 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/304 | Stud | Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/304 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 12A | 1.5V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 175A | 200 ns | Standard | 1 | 10μA @ 100V | 1.5V @ 38A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| JANTX1N3890A | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/304 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/304 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | 1.5V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 250A | 150 ns | Standard | 1 | 10μA @ 100V | 1.5V @ 20A | 12A | -65°C~175°C | |||||||||||||||||||||||||||||||
| GP2D006A065A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d006a065a-datasheets-8637.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 316pF @ 1V 1MHz | 650V | 60μA @ 650V | 1.65V @ 6A | 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D003A060A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d003a060a-datasheets-8639.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 158pF @ 1V 1MHz | 600V | 10μA @ 600V | 1.65V @ 3A | 3A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3295 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/246 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | DO-205AA, DO-8, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | HIGH CURRENT CABLE | 1 | Single | 1 | Qualified | O-MUPM-H1 | 100A | 1.55V | CATHODE | POWER | Small Signal =< 200mA (Io), Any Speed | SILICON | 1000V | 10mA | 1kV | 1.6kA | Standard | 1 | 1000V | 10mA @ 1000V | 1.55V @ 310A | -65°C~200°C | |||||||||||||||||||||||||||||||
| VS-8ETX06-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs8etx06pbf-datasheets-9442.pdf | TO-220-2 | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, UL RECOGNIZED | unknown | 8541.10.00.80 | SINGLE | 175°C | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | TO-220AC | 17 ns | Standard | 600V | 8A | 110A | 1 | 8A | 600V | 50μA @ 600V | 3V @ 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JANTX1N3891A | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/304 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/304 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | 1.5V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 250A | 150 ns | Standard | 1 | 10μA @ 200V | 1.5V @ 38A | 12A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| VS-20TQ035-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20tq035pbf-datasheets-9606.pdf | TO-220-2 | 10.66mm | 9.02mm | 4.82mm | 2 | 11 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 20A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.8kA | 2.7mA | 35V | Schottky | 35V | 20A | 1 | 2.7mA @ 35V | 570mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| GP2D020A120A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d020a120a-datasheets-8646.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1270pF @ 1V 1MHz | 1200V | 40μA @ 1200V | 1.8V @ 20A | 20A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP60P120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp60p120b-datasheets-8615.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 3581pF @ 1V 1MHz | 1200V | 100μA @ 1200V | 1.7V @ 60A | 60A DC | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1EFH01W-M3-18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1efh01wm318-datasheets-8529.pdf | DO-219AB | 2 | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | unknown | DUAL | FLAT | 175°C | 1 | R-PDSO-F2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 16 ns | Standard | 100V | 1A | 1A | 100V | 2μA @ 100V | 930mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| GP2D006A060A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d006a060a-datasheets-8616.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 316pF @ 1V 1MHz | 600V | 20μA @ 600V | 1.65V @ 6A | 6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBRT15M50AP5-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchSBR | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbrt15m50ap57-datasheets-8584.pdf | PowerDI™ 5 | 3 | 5 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150μA | Super Barrier | 50V | 15A | 290A | 1 | 50V | 150μA @ 50V | 540mV @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| GP2D006A065C | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d006a065c-datasheets-8617.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 316pF @ 1V 1MHz | 650V | 60μA @ 650V | 1.65V @ 6A | 6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D020A120B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d020a120b-datasheets-8657.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1270pF @ 1V 1MHz | 1200V | 40μA @ 1200V | 1.8V @ 20A | 20A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D050A060B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 2635pF @ 1V 1MHz | 600V | 170μA @ 600V | 1.65V @ 50A | 50A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP36Z060B | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp36z060b-datasheets-8590.pdf | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1460pF @ 1V 1MHz | 600V | 100μA @ 600V | 1.7V @ 36A | 36A DC | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1EFH02W-M3-18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1efh02wm318-datasheets-8550.pdf | DO-219AB | 2 | 2 | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | Tin | unknown | DUAL | FLAT | Single | 1 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 40A | 16 ns | Standard | 200V | 1A | 1A | 2μA @ 200V | 930mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| GP2D006A060C | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d006a060c-datasheets-8594.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 316pF @ 1V 1MHz | 600V | 20μA @ 600V | 1.65V @ 6A | 6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP12S060D | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp12s060d-datasheets-8597.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 487pF @ 1V 1MHz | 600V | 100μA @ 600V | 1.7V @ 12A | 12A DC | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D010A120C | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d010a120c-datasheets-8598.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 635pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.8V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GDP06S060A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/semiq-gdp06s060a-datasheets-8600.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 243pF @ 1V 1MHz | 600V | 100μA @ 600V | 1.7V @ 6A | 6A DC | -55°C~135°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP2D010A120A | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/semiq-gp2d010a120a-datasheets-8601.pdf | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 635pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.8V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1EFH02WHM3-18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1efh02whm318-datasheets-8540.pdf | DO-219AB | 2 | 2 | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | unknown | DUAL | FLAT | 175°C | 1 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 16 ns | Standard | 200V | 1A | 1A | 200V | 2μA @ 200V | 930mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-10ETF02SPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf06spbf-datasheets-1614.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 160A | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 200V | 160A | 200V | 200 ns | 145 ns | Standard | 200V | 10A | 1 | 100μA @ 200V | 1.2V @ 10A | -40°C~150°C |
