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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRB1035-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1035 | 3 | Common Cathode | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.06kA | 100μA | 35V | 150A | Schottky | 35V | 10A | 1 | 100μA @ 35V | 840mV @ 20A | -65°C~150°C | ||||||||||||||||||||||
| GP30AHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 125A | 50V | 5 μs | 5 μs | Standard | 50V | 3A | 1 | 3A | 5μA @ 50V | 1.2V @ 3A | -65°C~175°C | ||||||||||||||||||||||||
| GP20B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp20ge373-datasheets-5168.pdf | DO-201AA, DO-27, Axial | 20 | Single | GP20 | 65A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 100V | 5 μs | 5 μs | Standard | 100V | 2A | 100V | 5μA @ 100V | 1.2V @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| MBRB1660HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | 245 | MBRB1660 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 750mV | 150A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 60V | 150A | Schottky | 60V | 16A | 1 | 1mA @ 60V | 750mV @ 16A | -65°C~175°C | |||||||||||||||||||||
| MBRB1060HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB1060 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 800mV @ 10A | -65°C~150°C | |||||||||||||||||||||||||
| GP30DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30D | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 5 μs | 5 μs | Standard | 200V | 3A | 1 | 3A | 5μA @ 200V | 1.1V @ 3A | -65°C~175°C | |||||||||||||||||||||||
| MBRB1645HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | GULL WING | 245 | MBRB1645 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 16A | 150A | 200μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 150A | Schottky | 45V | 16A | 1 | 200μA @ 45V | 630mV @ 16A | -65°C~150°C | ||||||||||||||||||||||
| GPP60DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GPP60D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 500A | 200V | 5.5 μs | 5.5 μs | Standard | 200V | 6A | 1 | 6A | 5μA @ 200V | 1.1V @ 6A | -55°C~175°C | |||||||||||||||||||||||
| ESH1PDHE3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh1pcm384a-datasheets-8261.pdf | DO-220AA | ESH1PD | Single | DO-220AA (SMP) | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 200V | 25 ns | 25 ns | Standard | 200V | 1A | 25pF @ 4V 1MHz | 200V | 1μA @ 200V | 900mV @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| GPP60AHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GPP60A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 500A | 50V | 5.5 μs | 5.5 μs | Standard | 50V | 6A | 1 | 6A | 5μA @ 50V | 1.1V @ 6A | -55°C~175°C | |||||||||||||||||||||||
| GPP60G-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | GPP60G | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 500A | 400V | 5.5 μs | 5.5 μs | Standard | 400V | 6A | 1 | 6A | 5μA @ 400V | 1.1V @ 6A | -55°C~175°C | ||||||||||||||||||||
| GPP60GHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GPP60G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 500A | 400V | 5.5 μs | 5.5 μs | Standard | 400V | 6A | 1 | 6A | 5μA @ 400V | 1.1V @ 6A | -55°C~175°C | |||||||||||||||||||||||
| GP10FHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | yes | unknown | 2 | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 300V | 1A | 300V | 5μA @ 300V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| GP30JHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30J | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 125A | 600V | 5 μs | 5 μs | Standard | 600V | 3A | 1 | 3A | 5μA @ 600V | 1.1V @ 3A | -65°C~175°C | |||||||||||||||||||||||
| GPP60BHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GPP60B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 500A | 100V | 5.5 μs | 5.5 μs | Standard | 100V | 6A | 1 | 6A | 5μA @ 100V | 1.1V @ 6A | -55°C~175°C | |||||||||||||||||||||||
| GP10DEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | No | GP10D | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 200V | 30A | 200V | 3 μs | 3 μs | Standard | 200V | 1A | 8pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| M100D-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-m100je373-datasheets-5093.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | M100 | 2 | Single | 1 | Rectifier Diodes | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 50A | 200V | 2 μs | 2 μs | Standard | 200V | 1A | 1A | 1μA @ 200V | 1V @ 1A | -50°C~150°C | ||||||||||||||||||||||||||
| GP10GEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | No | GP10G | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| GI828-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi820e354-datasheets-2016.pdf | P600, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI828 | 2 | Single | 1 | Rectifier Diodes | 1.1V | 300A | 10μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 300A | 200 ns | 200 ns | Standard | 800V | 5A | 1 | 5A | 300pF @ 4V 1MHz | 10μA @ 800V | 1.1V @ 5A | -50°C~150°C | ||||||||||||||||||||||
| 1N4001-N-2-1-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | DO-204AL, DO-41, Axial | Standard Recovery >500ns, > 200mA (Io) | Standard | 50V | 5μA @ 50V | 1V @ 1A | 1A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GPP15B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp15me373-datasheets-5083.pdf | DO-204AC, DO-15, Axial | 2 | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | Standard | 100V | 1.5A | 1 | 8pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||
| GURB5H60HE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gurf5h60e345-datasheets-4028.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 245 | 3 | Single | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 5A | 90A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 5A | 1 | 5A | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | ||||||||||||||||||||
| GPP15G-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | SCHOTTKY | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp15me373-datasheets-5083.pdf | DO-204AC, DO-15, Axial | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | O-PALF-W2 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | Standard | 400V | 1.5A | 1 | 8pF @ 4V 1MHz | -55°C~150°C | ||||||||||||||||||||||||||||||||
| GPP15D-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp15me373-datasheets-5083.pdf | DO-204AC, DO-15, Axial | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | O-PALF-W2 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | Standard | 200V | 1.5A | 1 | 8pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||
| GP30MHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30M | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 125A | 1kV | 5 μs | 5 μs | Standard | 1kV | 3A | 1 | 3A | 1000V | 5μA @ 1000V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||||||||||
| M100J-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-m100je373-datasheets-5093.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | M100 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 50A | 600V | 2 μs | 2 μs | Standard | 600V | 1A | 1A | 1μA @ 600V | 1V @ 1A | -50°C~150°C | |||||||||||||||||||||||
| GI816-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 30A | 600V | 750 ns | 750 ns | Standard | 600V | 1A | 1A | 10μA @ 600V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| GP30GHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30G | 2 | Single | 1 | Rectifier Diodes | 1.1V | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 125A | 400V | 5 μs | 5 μs | Standard | 400V | 3A | 1 | 3A | 5μA @ 400V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||||||||||
| M100A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-m100je373-datasheets-5093.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | M100 | 2 | Single | 1 | Rectifier Diodes | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 50V | 50A | 50V | 2 μs | 2 μs | Standard | 50V | 1A | 1A | 1μA @ 50V | 1V @ 1A | -50°C~150°C | |||||||||||||||||||||||||||
| GPP60A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GPP60A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 500A | 50V | 5.5 μs | 5.5 μs | Standard | 50V | 6A | 1 | 6A | 5μA @ 50V | 1.1V @ 6A | -55°C~175°C |
