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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CN646 BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cn645tr-datasheets-0477.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | 2 | 150°C | 1 | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.6W | Standard | 0.4A | 11pF @ 12V 1MHz | 300V | 200nA @ 300V | 1V @ 400mA | 400mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| GI810HE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 30A | 50V | 750 ns | 750 ns | Standard | 50V | 1A | 1A | 10μA @ 50V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| FGP50DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 950mV | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 135A | 200V | 35 ns | 35 ns | Standard | 200V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~175°C | |||||||||||||||||||
| FGP10B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 100V | 30A | 100V | 35 ns | 35 ns | Standard | 100V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 100V | 950mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| GHR16-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ghr16e373-datasheets-4879.pdf | R-1, Axial | 2 | 1 | yes | EAR99 | LOW LEAKAGE CURRENT | No | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.6kV | 20A | 1.6kV | 300 ns | 300 ns | Standard | 1.6kV | 500mA | 0.5A | 1600V | 5μA @ 1600V | 1.5V @ 500mA | -65°C~175°C | ||||||||||||||||||||||||||
| 1N485B BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-1n485btr-datasheets-6699.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | compliant | 8541.10.00.70 | e3 | MATTE TIN (315) | NO | WIRE | 260 | 10 | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 200V | DO-35 | Standard | 0.2A | 200V | 25nA @ 200V | 1V @ 100mA | 200mA | -65°C~200°C | |||||||||||||||||||||||||||||||||||
| GI1-1400GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi11600gpe354-datasheets-8126.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.4kV | 30A | 1.4kV | 1.5 μs | 25 μs | Standard | 1.4kV | 1A | 1A | 1400V | 10μA @ 1400V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||
| GI1-1600GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi11600gpe354-datasheets-8126.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | GI1-1600 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.6kV | 30A | 1.6kV | 1.5 μs | 25 μs | Standard | 1.6kV | 1A | 1A | 1600V | 10μA @ 1600V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| APD340VG-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-apd340vrtrg1-datasheets-4077.pdf | DO-204AC, DO-15, Axial | 2 | 5 Weeks | EAR99 | FREE WHEELING DIODE, LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 40V | 3A | 80A | 1 | 3A | 40V | 500μA @ 40V | 500mV @ 3A | -50°C~125°C | ||||||||||||||||||||||||||||||
| MBR5H150VPTR-G1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr5h150vpce1-datasheets-6654.pdf | DO-201AA, DO-27, Axial | 5 Weeks | DO-27 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 5A | 150V | 8μA @ 150V | 920mV @ 5A | 5A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| GI811HE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 30A | 100V | 750 ns | 750 ns | Standard | 100V | 1A | 1A | 10μA @ 100V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| FGP50B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 135A | 100V | 35 ns | 35 ns | Standard | 100V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 5A | -65°C~175°C | ||||||||||||||||||||
| FGP50CHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 135A | 150V | 35 ns | 35 ns | Standard | 150V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 5A | -65°C~175°C | ||||||||||||||||||||
| ESH2PB-E3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh2pbm384a-datasheets-3411.pdf | DO-220AA | ESH2PB | DO-220AA (SMP) | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | Standard | 100V | 2A | 25pF @ 4V 1MHz | 100V | 1μA @ 100V | 980mV @ 2A | 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GI810-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 30A | 50V | 750 ns | 750 ns | Standard | 50V | 1A | 1A | 10μA @ 50V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| GI250-2HE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi2504e354-datasheets-4686.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GI250-2 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2kV | 15A | 2kV | 2 μs | 2 μs | Standard | 2kV | 250mA | 0.25A | 3pF @ 4V 1MHz | 2000V | 5μA @ 2000V | 3.5V @ 250mA | -65°C~175°C | |||||||||||||||||||||||
| MBR2150VRTR-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/diodesincorporated-mbr2150vgtre1-datasheets-9550.pdf | DO-214AC, SMA | 5 Weeks | DO-214AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 2A | 150V | 100μA @ 150V | 850mV @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| FGP10CHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 30A | 150V | 35 ns | 35 ns | Standard | 150V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| FGP30C-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 3A | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 150V | 35 ns | 35 ns | Standard | 150V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 3A | -65°C~175°C | |||||||||||||||||||||
| GI811-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 30A | 100V | 750 ns | 750 ns | Standard | 100V | 1A | 1A | 10μA @ 100V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| FGP50C-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 135A | 150V | 35 ns | 35 ns | Standard | 150V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 5A | -65°C~175°C | ||||||||||||||||||||
| CN649 BK | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cn645tr-datasheets-0477.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | EAR99 | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | 2 | 150°C | 1 | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.6W | Standard | 0.4A | 11pF @ 12V 1MHz | 600V | 200nA @ 600V | 1V @ 400mA | 400mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| FGP20C-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 50A | 150V | 35 ns | 35 ns | Standard | 150V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 2A | -65°C~175°C | |||||||||||||||||||||
| FGP20DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | yes | No | FGP20D | 2 | Single | 2A | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 2μA | 200V | 50A | 200V | 35 ns | 35 ns | Standard | 200V | 2A | 45pF @ 4V 1MHz | 2μA @ 200V | 950mV @ 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| FGP30B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 3A | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 3A | -65°C~175°C | |||||||||||||||||||||
| GI812-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 30A | 200V | 750 ns | 750 ns | Standard | 200V | 1A | 1A | 10μA @ 200V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| FGP10C-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 30A | 150V | 35 ns | 35 ns | Standard | 150V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| GI1-1200GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi11600gpe354-datasheets-8126.pdf | DO-204AC, DO-15, Axial | yes | No | 2 | Single | 30A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 1.2kV | 30A | 1.2kV | 1.5 μs | 25 μs | Standard | 1.2kV | 1A | 1200V | 10μA @ 1200V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| ESH3CHE3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh3dhe3ah-datasheets-5345.pdf | DO-214AB, SMC | 2 | No | ESH3C | Single | DO-214AB (SMC) | 3A | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 150V | 125A | 150V | 40 ns | 25 ns | Standard | 150V | 3A | 150V | 5μA @ 150V | 900mV @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| FGP20CHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 50A | 150V | 35 ns | 35 ns | Standard | 150V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 2A | -65°C~175°C |
