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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Number of Outputs | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Display Type | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HER105-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2003 | /files/diodesincorporated-her102t-datasheets-2112.pdf | 400V | 1A | DO-204AL, DO-41, Axial | 20pF | Exempt | 2 | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | HER105 | 2 | Single | 1 | Not Qualified | 1A | 1.1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 50 ns | Standard | 400V | 1A | 5μA @ 400V | 1.1V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3265 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | /files/powerexinc-1n3265-datasheets-0396.pdf | DO-205AB, DO-9, Stud | 1 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | 1N3265 | 175°C | 1 | Rectifier Diodes | Not Qualified | O-MUPM-H1 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.9V | Standard | 300V | 160A | 2000A | 1 | 300V | 12mA @ 300V | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3766R | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n3768r-datasheets-0309.pdf | 1 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | POWER | SILICON | 10μA | 800V | 500A | 1.8V | RECTIFIER DIODE | 1 | 10μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RL203-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-rl203t-datasheets-0336.pdf | 200V | 2A | DO-204AC, DO-15, Axial | 2 | 2 | e3 | Matte Tin (Sn) | WIRE | RL203 | Single | Not Qualified | 1V | Standard Recovery >500ns, > 200mA (Io) | 70A | Standard | 200V | 2A | 5μA @ 200V | 1V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4005/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Cut Tape (CT) | Not Applicable | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n400554-datasheets-0289.pdf | 600V | 1A | DO-204AL, DO-41, Axial | 15pF | Contains Lead | 2 | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 1N4005 | 2 | NOT SPECIFIED | 1 | Not Qualified | 1A | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 600V | 1A | 15pF @ 4V 1MHz | 5μA @ 600V | 1.1V @ 1A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1PS59SB20,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-1ps59sb20115-datasheets-0346.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | unknown | 8541.10.00.70 | e3 | TIN | YES | DUAL | GULL WING | 260 | 1PS59SB20 | 3 | 125°C | 40 | 1 | Not Qualified | R-PDSO-G3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 0.5A | 90pF @ 0V 1MHz | 40V | 100μA @ 35V | 550mV @ 500mA | 500mA DC | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5406-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/diodesincorporated-1n5407t-datasheets-1368.pdf | 600V | 3A | 5.3mm | DO-201AD, Axial | 25pF | 9.5mm | 5.3mm | 5.3mm | Lead Free | 2 | 6 Weeks | 1.09999g | 2 | no | EAR99 | Tin | No | 8541.10.00.80 | e3 | WIRE | 260 | 1N5406 | 2 | Single | 40 | 1 | Rectifier Diodes | 3A | 3A | 1V | 200A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 200A | Standard | 600V | 3A | 1 | 600V | 25pF @ 4V 1MHz | 10μA @ 600V | 1V @ 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| HER303-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2003 | /files/diodesincorporated-her303t-datasheets-0279.pdf | 200V | 3A | DO-201AD, Axial | 70pF | Exempt | 2 | 2 | EAR99 | HIGH RELIABILITY | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | HER303 | Single | 1 | Not Qualified | 3A | 1.1V | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125A | 50 ns | Standard | 200V | 3A | 1 | 10μA @ 200V | 1.1V @ 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4448,133 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 200°C | -65°C | ROHS3 Compliant | /files/nexperiausainc-1n4448133-datasheets-0237.pdf | DO-204AH, DO-35, Axial | Lead Free | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | 500mW | WIRE | 1N4448 | 2 | Single | 1 | Rectifier Diodes | 200mA | 1V | 450mA | 25nA | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100V | 4A | 4 ns | 4 ns | Standard | 100V | 200mA | 4pF @ 0V 1MHz | 25nA @ 20V | 1V @ 100mA | 200mA DC | 200°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| FR801 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2001 | /files/diodesincorporated-fr802-datasheets-0225.pdf | 50V | 8A | TO-220-2 | 70pF | Exempt | 2 | 2 | no | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 8A | 1.3V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 10μA | 150 ns | Standard | 50V | 8A | 1 | 10μA @ 50V | 1.3V @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SK12-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 2005 | /files/diodesincorporated-sk1213-datasheets-0304.pdf | 20V | 1A | DO-214AA, SMB | 110pF | 4.57mm | 2.42mm | 3.94mm | Contains Lead | 2 | 92.986436mg | 2 | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | unknown | 8541.10.00.80 | e0 | TIN LEAD | Standard | DUAL | C BEND | 235 | SK12 | 2 | Single | 10 | 1 | Not Qualified | 1A | 1A | 550mV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25A | 500μA | 20V | 25A | Schottky | 20V | 1A | 110pF @ 4V 1MHz | 500μA @ 20V | 550mV @ 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||
| 1N3768R | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n3768r-datasheets-0309.pdf | 1 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | O-MUPM-D1 | 35A | POWER | SILICON | 1000V | 10μA | 1kV | 500A | RECTIFIER DIODE | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR803 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2001 | /files/diodesincorporated-fr802-datasheets-0225.pdf | 200V | 8A | TO-220-2 | 70pF | Exempt | 2 | 2 | no | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 8A | 8A | 1.3V | CATHODE | 1 | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 150A | 150 ns | Standard | 200V | 8A | 1 | LCD | 10μA @ 200V | 1.3V @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| BYW29E-200,127 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | /files/weensemiconductors-byw29e200127-datasheets-1584.pdf | TO-220-2 | 2 | EAR99 | e3 | Tin (Sn) | IEC-60134 | NO | SINGLE | NOT SPECIFIED | BYW29-200 | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 8A | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 10μA | TO-220AC | 25ns | Standard | 1 | 200V | 10μA @ 200V | 1.05V @ 8A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR304-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Cut Tape (CT) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2002 | /files/diodesincorporated-fr304t-datasheets-0291.pdf | 400V | 3A | DO-201AD, Axial | 70pF | Exempt | 2 | 2 | no | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 260 | FR304 | Single | 40 | 1 | Not Qualified | 3A | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 150 ns | Standard | 400V | 3A | 1 | 10μA @ 400V | 1.3V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| FR804 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2001 | /files/diodesincorporated-fr802-datasheets-0225.pdf | 400V | 8A | TO-220-2 | 70pF | Exempt | 2 | 2 | no | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 8A | 1.3V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 10μA | 150 ns | Standard | 400V | 8A | 1 | 10μA @ 400V | 1.3V @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N4148,143 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nxpusainc-1n4448143-datasheets-0163.pdf | DO-204AH, DO-35, Axial | 2 | EAR99 | 8541.10.00.70 | e3 | Tin (Sn) | NO | WIRE | NOT SPECIFIED | 1N4148 | 2 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100V | 4ns | Standard | 2A | 0.2A | 4pF @ 0V 1MHz | 100V | 25nA @ 20V | 1V @ 10mA | 200mA DC | 200°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| S1BB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | Non-RoHS Compliant | 2006 | /files/diodesincorporated-s1m13f-datasheets-6717.pdf | 100V | 1A | DO-214AA, SMB | 10pF | 4.57mm | 2.42mm | 3.94mm | Contains Lead | 2 | 92.986436mg | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn85Pb15) | DUAL | C BEND | 235 | S1B | 2 | Single | 10 | 1 | Rectifier Diodes | 1A | 1A | 1.1V | 30A | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 3 μs | 3 μs | Standard | 100V | 1A | 100V | 10pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| C3D04065E-TR | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 26 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 251pF @ 0V 1MHz | 650V | 60μA @ 650V | 1.8V @ 4A | 13.5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV29G-600,127 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | /files/weensemiconductors-byv29g600127-datasheets-1572.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | not_compliant | e3 | Tin (Sn) | IEC-60134 | NO | SINGLE | BYV29-600 | 150°C | 1 | R-PSIP-T3 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 50μA | 60ns | Standard | 77A | 1 | 600V | 50μA @ 600V | 1.25V @ 8A | 9A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C4D05120E-TR | Cree/Wolfspeed | $1.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 175°C | -55°C | RoHS Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7 Weeks | 3 | No | Single | 1.8V | No Recovery Time > 500mA (Io) | 42A | 0ns | Silicon Carbide Schottky | 390pF @ 0V 1MHz | 1200V | 150μA @ 1200V | 1.8V @ 5A | 19A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C4D08120E-TR | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | RoHS Compliant | 2017 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 560pF @ 0V 1MHz | 1200V | 250μA @ 1200V | 1.8V @ 8A | 24.5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRM3100-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbrm310013f-datasheets-0201.pdf | 100V | 3A | Powermite®3 | 100pF | 4.09mm | 1.14mm | 4.43mm | Lead Free | 2 | 3 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | Standard | SINGLE | GULL WING | 260 | MBRM3100 | 3 | Common Anode | 40 | 1 | R-PSSO-G2 | 3A | 3A | 760mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 100μA | 100V | 50A | Schottky | 100V | 3A | 1 | 100pF @ 4V 1MHz | 100μA @ 100V | 760mV @ 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||
| 1N4148,133 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/nxpusainc-1n4448143-datasheets-0163.pdf | DO-204AH, DO-35, Axial | 2 | EAR99 | 8541.10.00.70 | e3 | Tin (Sn) | NO | WIRE | NOT SPECIFIED | 1N4148 | 2 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100V | 4ns | Standard | 2A | 0.2A | 4pF @ 0V 1MHz | 100V | 25nA @ 20V | 1V @ 10mA | 200mA DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| S4KW10C-5P | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Module | 3 | 18 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | UNSPECIFIED | UNSPECIFIED | S4KW10 | 3 | 150°C | 2 | Rectifier Diodes | Not Qualified | R-XXSS-X3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4μA | 2 μs | Standard | 10kV | 12A | 400A | 1 | 10000V | 4μA @ 10000V | 10V @ 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1PS193,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-1ps193135-datasheets-0232.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.10.00.70 | e3 | TIN | YES | DUAL | GULL WING | 260 | 1PS193 | 3 | 150°C | 40 | 1 | Not Qualified | R-PDSO-G3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.25W | 85V | 0.5μA | 4ns | Standard | 4A | 0.215A | 1.5pF @ 0V 1MHz | 80V | 500nA @ 80V | 1.2V @ 100mA | 215mA DC | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D03060E-TR | Cree/Wolfspeed | $1.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | RoHS Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | TO-252-2 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 155pF @ 0V 1MHz | 600V | 50μA @ 600V | 1.7V @ 3A | 11A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS216,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-bas216115-datasheets-0185.pdf | SOD-110 | 2 | EAR99 | 8541.10.00.70 | YES | DUAL | WRAP AROUND | NOT SPECIFIED | BAS216 | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-CDSO-R2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.4W | 85V | 1μA | 4ns | Standard | 4A | 0.25A | 1.5pF @ 0V 1MHz | 75V | 1μA @ 75V | 1.25V @ 150mA | 250mA DC | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S4KW12C-6P | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Module | 3 | 18 Weeks | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | UNSPECIFIED | UNSPECIFIED | S4KW12 | 3 | 150°C | 2 | Rectifier Diodes | Not Qualified | R-XXSS-X3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4μA | 2 μs | Standard | 12kV | 12A | 400A | 1 | 12000V | 4μA @ 12000V | 12V @ 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4148,113 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/nxpusainc-1n4448143-datasheets-0163.pdf | DO-204AH, DO-35, Axial | 2 | EAR99 | 8541.10.00.70 | e3 | Tin (Sn) | CECC50001-021 | NO | WIRE | NOT SPECIFIED | 1N4148 | 2 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100V | 0.025μA | 4ns | Standard | 2A | 0.2A | 4pF @ 0V 1MHz | 100V | 25nA @ 20V | 1V @ 10mA | 200mA DC | 200°C Max |
