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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SIDC07D60F6X1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sidc07d60f6x1sa2-datasheets-5273.pdf | Die | Contains Lead | 1 | 13 Weeks | no | EAR99 | 8541.10.00.40 | Halogen Free | UPPER | NO LEAD | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-XUUC-N1 | 22.5A | 600V | SINGLE | 600V | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Standard | 600V | 22.5A | 1 | 0.12μs | 27μA @ 600V | 1.6V @ 22.5A | 22.5A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| IDP30E60XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/infineontechnologies-idp30e60xksa1-datasheets-5276.pdf | TO-220-2 | Lead Free | 2 | 8 Weeks | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | 3 | Single | 1 | R-PSFM-T2 | 52.3A | 2V | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 142.9W | 50μA | 600V | 117A | TO-220AC | 126 ns | Standard | 600V | 52.3A | 1 | 50μA @ 600V | 2V @ 30A | 52.3A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| FFSP1065B-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Not Applicable | ROHS3 Compliant | /files/onsemiconductor-ffsp1065bf085-datasheets-5280.pdf | TO-220-2 | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 421pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS12STR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ews12sm3-datasheets-0406.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 3 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | TO-252AA | Standard | 1.2kV | 8A | 120A | 1 | 8A | 1200V | 50μA @ 1200V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| MBR6090PTE3/TU | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 1997 | 13 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS16-0045AS-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dss160045astrl-datasheets-4219.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 16A | 45V | 500μA @ 45V | 670mV @ 15A | 16A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HSM590G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm590je3tr13-datasheets-3681.pdf | DO-215AB, SMC Gull Wing | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | e0 | Tin/Lead (Sn/Pb) | HSM590 | Single | 5A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 90V | 200A | Schottky | 90V | 5A | 250μA @ 90V | 800mV @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4148UR-1/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemi-jantx1n4148ur1tr-datasheets-8700.pdf | 14 Weeks | 2 | Single | 1.2V | 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ATS12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20ets12m3-datasheets-1329.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | TO-220AB | Standard | 1.2kV | 20A | 300A | 1 | 1200V | 100μA @ 1200V | 1.1V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF02STRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20etf04sm3-datasheets-5024.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | SINGLE | GULL WING | 260 | 150°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 160 ns | Standard | 200V | 20A | 300A | 1 | 200V | 100μA @ 200V | 1.3V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GLHUELSE1627XPSA1 | Infineon Technologies | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF06STRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs20etf04sm3-datasheets-5024.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | SINGLE | GULL WING | 260 | 150°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 160 ns | Standard | 600V | 20A | 300A | 1 | 600V | 100μA @ 600V | 1.3V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FFSD0865A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-ffsd0865a-datasheets-5233.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 463pF @ 1V 100kHz | 650V | 200μA @ 650V | 1.75V @ 8A | 15A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HSM5100G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm590je3tr13-datasheets-3681.pdf | DO-215AB, SMC Gull Wing | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | e0 | Tin/Lead (Sn/Pb) | HSM5100 | Single | 5A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 100V | 200A | Schottky | 100V | 5A | 250μA @ 100V | 800mV @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| HSM830J/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm845je3tr13-datasheets-3975.pdf | DO-214AB, SMC | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | HSM830 | Single | DO-214AB | 8A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 30V | 350A | Schottky | 30V | 8A | 30V | 250μA @ 30V | 620mV @ 8A | 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH05G65C5XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/infineontechnologies-idh05g65c5xksa2-datasheets-5238.pdf | TO-220-2 | Lead Free | 2 | 18 Weeks | No SVHC | 2 | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | 55W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 5A | 1.7V | 46A | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 90μA | 650V | 46A | 0ns | Silicon Carbide Schottky | 1 | 5A | 160pF @ 1V 1MHz | 90μA @ 650V | 1.7V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| DHG30IM600PC-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dhg30im600pctrl-datasheets-5241.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | 125°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 210W | 600V | 50μA | 35ns | Standard | 200A | 1 | 30A | 600V | 50μA @ 600V | 2.37V @ 30A | 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SICRD6650TR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 150pF @ 5V 1MHz | 650V | 50μA @ 650V | 1.8V @ 6A | 6A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30EPH06L-N3 | Vishay Semiconductor Diodes Division | $2.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30eph06ln3-datasheets-5242.pdf | TO-247-2 | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 600V | 50μA @ 600V | 2.6V @ 30A | 30A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA40IM800PC-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 185W | 800V | 10μA | Standard | 275A | 1 | 40A | 10pF @ 400V 1MHz | 800V | 10μA @ 800V | 1.3V @ 40A | 40A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF06STRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2010 | /files/vishaysemiconductordiodesdivision-vs20etf04sm3-datasheets-5024.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | GULL WING | 260 | Single | 40 | 1 | R-PSSO-G2 | 20A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 100μA | 600V | 160 ns | Standard | 600V | 20A | 1 | 100μA @ 600V | 1.3V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-HFA16TB120SL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa16tb120sm3-datasheets-7208.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | Standard | 1200V | 20μA @ 1200V | 3.93V @ 32A | 16A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDD05SG60CXTMA2 | Infineon Technologies | $4.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-idd05sg60cxtma2-datasheets-5245.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 600V | 0ns | Silicon Carbide Schottky | 18A | 1 | 5A | 110pF @ 1V 1MHz | 600V | 30μA @ 600V | 2.3V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| SICRD5650TR | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 60μA @ 650V | 1.7V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ATS08-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs20ets12m3-datasheets-1329.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | TO-220AB | Standard | 800V | 20A | 300A | 1 | 800V | 100μA @ 800V | 1.1V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| DMA10IM1600PZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1600V | 10μA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1600V | 10μA @ 1600V | 1.26V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UPS315/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ups315e3tr13-datasheets-3939.pdf | DO-216AA | 19 Weeks | 3 | no | No | Single | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 2mA | 15V | 150A | Schottky | 15V | 3A | 2mA @ 15V | 320mV @ 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBRB1045TRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrb1045m3-datasheets-3620.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 45V | 10A | 150A | 1 | 600pF @ 5V 1MHz | 45V | 100μA @ 45V | 570mV @ 10A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| MBR60200PTE3/TU | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 1997 | 13 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MB3045S-E3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-mb3045se38w-datasheets-5196.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | GULL WING | MB3045 | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 30A | 700mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 45V | 200A | Schottky | 45V | 30A | 1 | 200μA @ 45V | 700mV @ 30A | -65°C~150°C |
