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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Trigger Device Type | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HSM180G/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm180ge3tr13-datasheets-3941.pdf | DO-215AA, SMB Gull Wing | 2 | 24 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | DUAL | 260 | 2 | Single | 40 | 1 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 80V | 40A | Schottky | 80V | 1A | 1A | 100μA @ 80V | 840mV @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| LXA15T600 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | /files/powerintegrations-lxa15t600-datasheets-5095.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 96W | 1 | 15A | 95A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 350A | 600V | 25 ns | 25 ns | Standard | 600V | 15A | 1 | 250μA @ 600V | 3.1V @ 15A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||
| VS-10ETF06-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf04m3-datasheets-4866.pdf | TO-220-2 | 10.54mm | 8.76mm | 4.57mm | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 10A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 160A | 100μA | 600V | 200 ns | Standard | 600V | 10A | 1 | 100μA @ 600V | 1.2V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| IDK05G65C5XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idk05g65c5xtma2-datasheets-5100.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 55W | 650V | 830μA | 0ns | Silicon Carbide Schottky | 41A | 1 | 160pF @ 1V 1MHz | 650V | 830μA @ 650V | 1.8V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| UFS570JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs580je3tr13-datasheets-5062.pdf | DO-214AB, SMC | 20 Weeks | yes | No | UFS570 | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | Standard | 700V | 5A | 700V | 10μA @ 700V | 1.35V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG10I400PM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED²™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dpg10i400pm-datasheets-5106.pdf | TO-220-2 Full Pack | Lead Free | 2 | 28 Weeks | 2.299997g | No SVHC | 2 | yes | EAR99 | UL RECOGNIZED, FREEWHEELING DIODE, SNUBBER DIODE | No | 8541.10.00.80 | e3 | PURE TIN | 3 | Single | 1 | Rectifier Diodes | 10A | 1.51V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35W | 100A | 400V | 150A | 45 ns | 45 ns | Standard | 400V | 10A | 1 | 1μA @ 400V | 1.32V @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-8EWS16STRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ews16strlm3-datasheets-5077.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 3 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | TO-252AA | Standard | 1.6kV | 8A | 120A | 1 | 8A | 1600V | 50μA @ 1600V | 1.1V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| JAN1N4150UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/231 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n4150ur1-datasheets-2339.pdf | DO-213AA | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 50V | 4A | 4 ns | Standard | 100nA @ 50V | 1V @ 200mA | 200mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| DMA10P1600UZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75W | 1600V | 5μA | TO-252AA | Standard | 92A | 1 | 10A | 1pF @ 400V 1MHz | 1600V | 5μA @ 1600V | 1.55V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4444-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1999 | 6 Weeks | 2 | No | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI36-06AS-TRL | IXYS | $4.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsei3606astub-datasheets-3642.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | DSEI36-06 | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 100μA @ 600V | 1.6V @ 37A | 37A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| D4025LTP | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | ROHS3 Compliant | 2004 | /files/littelfuseinc-d4020ltp-datasheets-1450.pdf | TO-220-3 Isolated Tab | 3 | 16 Weeks | Unknown | 3 | EAR99 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | Not Qualified | 15.9A | 1.6V | Standard Recovery >500ns, > 200mA (Io) | 350A | 400V | TO-220AB | 4 μs | Standard | 400V | 15.9A | SCR | 10μA @ 400V | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-EPU3006-F3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishay-vsepu3006f3-datasheets-8482.pdf | TO-247-2 | 15.87mm | 20.7mm | 5.31mm | 2 | 11 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | 2 | Single | 1 | Rectifier Diodes | 30A | 2V | 200A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 30μA | 600V | 200A | 600V | 45 ns | 26 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| VS-10ETF10FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf12fpm3-datasheets-3494.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE, UL APPROVED | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-220AC | 310 ns | Standard | 1kV | 10A | 140A | 1 | 1000V | 100μA @ 1000V | 1.33V @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF10S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-vs20etf12sm3-datasheets-5060.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 400 ns | Standard | 1kV | 20A | 355A | 1 | 1000V | 100μA @ 1000V | 1.31V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N4148-1E3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n41481-datasheets-7410.pdf | DO-204AH, DO-35, Axial | 6 Weeks | DO-35 (DO-204AH) | Small Signal =< 200mA (Io), Any Speed | 20ns | Standard | 4pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS08STRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ews12sm3-datasheets-0406.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 1.1V | CATHODE | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150A | TO-252AA | Standard | 800V | 8A | 120A | 1 | 8A | 50μA @ 800V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| IDP1301GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 26 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS515JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs515je3tr13-datasheets-5058.pdf | DO-214AB, SMC | 20 Weeks | No | UFS515 | DO-214AB | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | Standard | 150V | 5A | 150V | 10μA @ 150V | 950mV @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF12S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs20etf12sm3-datasheets-5060.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 400 ns | Standard | 1.2kV | 20A | 355A | 1 | 1200V | 100μA @ 1200V | 1.31V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| UFS580JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs580je3tr13-datasheets-5062.pdf | DO-214AB, SMC | 20 Weeks | yes | No | UFS580 | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | Standard | 800V | 5A | 800V | 10μA @ 800V | 1.35V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS560JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-ufs580je3tr13-datasheets-5062.pdf | DO-214AB, SMC | 20 Weeks | yes | No | UFS560 | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | Standard | 600V | 5A | 600V | 10μA @ 600V | 1.35V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS510JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs515je3tr13-datasheets-5058.pdf | DO-214AB, SMC | 20 Weeks | 2 | No | UFS510 | Single | DO-214AB | 5A | 950mV | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 100V | 175A | 30 ns | Standard | 100V | 5A | 100V | 10μA @ 100V | 950mV @ 5A | 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS10-01AS-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-dss1001astrl-datasheets-3905.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | TO-263AB | 840mV | Fast Recovery =< 500ns, > 200mA (Io) | 300μA | 100V | Schottky | 100V | 10A | 100V | 300μA @ 100V | 840mV @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS520JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs515je3tr13-datasheets-5058.pdf | DO-214AB, SMC | 20 Weeks | 2 | No | UFS520 | Single | DO-214AB | 5A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 175A | 30 ns | Standard | 200V | 5A | 200V | 10μA @ 200V | 950mV @ 5A | 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFS530JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ufs530je3tr13-datasheets-5071.pdf | DO-214AB, SMC | 20 Weeks | No | UFS530 | DO-214AB | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | Standard | 300V | 5A | 300V | 10μA @ 300V | 1.2V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSPF0665A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | AVALANCHE | RoHS Compliant | /files/onsemiconductor-ffspf0665a-datasheets-5073.pdf | TO-220-2 Full Pack | 2 | 10 Weeks | ACTIVE (Last Updated: 21 hours ago) | yes | HIGH RELIABILITY, PD-CASE | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | ISOLATED | EFFICIENCY | No Recovery Time > 500mA (Io) | 35W | 650V | 200μA | TO-220AC | 0ns | Silicon Carbide Schottky | 415A | 1 | 6A | 361pF @ 1V 100kHz | 650V | 200μA @ 650V | 1.75V @ 6A | 6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF08S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs20etf12sm3-datasheets-5060.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 400 ns | Standard | 800V | 20A | 355A | 1 | 800V | 100μA @ 800V | 1.31V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS16STRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ews16strlm3-datasheets-5077.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 3 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | TO-252AA | Standard | 1.6kV | 8A | 120A | 1 | 8A | 1600V | 50μA @ 1600V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| DSA15IM200UC-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75W | 200V | 250μA | TO-252AA | Schottky | 200A | 1 | 15A | 67pF @ 24V 1MHz | 200V | 250μA @ 200V | 940mV @ 15A | 15A | -55°C~175°C |
