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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Frequency Band | Diode Capacitance-Max | Type of Schottky Barrier | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| BYG24GHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg24je3tr-datasheets-3713.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | Avalanche | 400V | 1μA @ 400V | 1.25V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBB240LR-HF | Comchip Technology | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbb260lrhf-datasheets-0315.pdf | DO-214AA, SMB | 2 | 12 Weeks | LOW POWER LOSS | YES | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | 500μA | Schottky | 70A | 1 | 2A | 30pF @ 4V 1MHz | 40V | 500μA @ 40V | 450mV @ 2A | 2A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||
| S10JL-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microcommercialco-s10mltp-datasheets-7744.pdf | DO-214AB, SMC | 2 | 12 Weeks | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 150°C | 10 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | 10μA | Standard | 200A | 1 | 10A | 600V | 10μA @ 600V | 1.2V @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| S3B-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 100V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.15V @ 2.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| S5M-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5jm39at-datasheets-3297.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 1kV | 5A | 100A | 1 | 5A | 40pF @ 4V 1MHz | 1000V | 250μA @ 1000V | 1.15V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| CDBB1200LR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbb140lrhf-datasheets-7158.pdf | DO-214AA, SMB | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | YES | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | Schottky | 50A | 1A | 120pF @ 4V 1MHz | 200V | 500μA @ 200V | 850mV @ 1A | 1A | -50°C~175°C | ||||||||||||||||||||||||||||||||||||||
| CDBA2200LR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdba240lrhf-datasheets-0976.pdf | DO-214AC, SMA | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | YES | DUAL | C BEND | 260 | 175°C | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 500μA | Schottky | 70A | 1 | 2A | 30pF @ 4V 1MHz | 200V | 500μA @ 200V | 850mV @ 2A | 2A | -50°C~175°C | |||||||||||||||||||||||||||||||||||
| SS23-M3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | Schottky | 30V | 2A | 75A | 1 | 2A | 30V | 400μA @ 30V | 500mV @ 2A | -65°C~125°C | ||||||||||||||||||||||||||||||||||
| S5J-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5jm39at-datasheets-3297.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 600V | 5A | 100A | 1 | 5A | 40pF @ 4V 1MHz | 600V | 10μA @ 1000V | 1.15V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| UF4006-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uf4001e354-datasheets-7776.pdf | DO-204AL, DO-41, Axial | 8 Weeks | 2 | No | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 800V | 30A | 800V | 75 ns | 75 ns | Standard | 800V | 1A | 17pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.7V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| S5K-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5jm39at-datasheets-3297.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 800V | 5A | 100A | 1 | 5A | 40pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.15V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| S3A-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 50V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 50V | 10μA @ 50V | 1.15V @ 2.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| S3G-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 400V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.15V @ 2.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| SBRS8140T3G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-mbrs140t3g-datasheets-3021.pdf | DO-214AA, SMB | 5 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 1mA @ 40V | 600mV @ 1A | 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S5D-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5jm39at-datasheets-3297.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 200V | 5A | 100A | 1 | 5A | 40pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.15V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| S5A-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s5jm39at-datasheets-3297.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 50V | 5A | 100A | 1 | 5A | 40pF @ 4V 1MHz | 50V | 10μA @ 50V | 1.15V @ 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| BAT1502LSE6433XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 0201 (0603 Metric) | 2 | 16 Weeks | 2 | LOW NOISE | e4 | Gold (Au) | BOTTOM | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 110mA | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.1W | 4V | Schottky | 4V | 110mA | 350pF @ 0V 1MHz | X B | 0.35pF | LOW BARRIER | 5μA @ 1V | 410mV @ 10mA | 110mA DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| S3KB-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/microcommercialco-s3bbtp-datasheets-3058.pdf | DO-214AA, SMB | 2 | 12 Weeks | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | S3K | 2 | 150°C | 10 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 800V | Standard | 100A | 1 | 3A | 800V | 10μA @ 800V | 1.15V @ 3A | 3A | ||||||||||||||||||||||||||||||||
| S3D-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 200V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| SR309 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr304a0g-datasheets-2356.pdf | DO-201AD, Axial | 2 | 9 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | PURE TIN | AEC-Q101 | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 100μA | Schottky | 80A | 1 | 3A | 90V | 100μA @ 90V | 850mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| UF4005-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uf4001e354-datasheets-7776.pdf | DO-204AL, DO-41, Axial | 8 Weeks | 2 | No | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 600V | 30A | 600V | 75 ns | 75 ns | Standard | 600V | 1A | 17pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| ESH1D-M3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-esh1be361t-datasheets-4197.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 50A | 25 ns | Standard | 200V | 1A | 1A | 25pF @ 4V 1MHz | 1μA @ 200V | 900mV @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||
| U2B-E3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-u2de352t-datasheets-7596.pdf | DO-214AA, SMB | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 50A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 50A | 100V | 27 ns | 20 ns | Standard | 100V | 2A | 1 | 2A | 10μA @ 100V | 900mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||
| RM 1ZV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rm1zv-datasheets-3200.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 1A | 200V | 5μA @ 200V | 950mV @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| EM01A | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-em01av1-datasheets-7935.pdf | Axial | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | e0 | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 600V | 1A | 45A | 1A | 600V | 10μA @ 600V | 970mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||
| SR310 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr304a0g-datasheets-2356.pdf | DO-201AD, Axial | 2 | 9 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | PURE TIN | AEC-Q101 | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 100μA | Schottky | 80A | 1 | 3A | 100V | 100μA @ 100V | 850mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| SR320 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr304a0g-datasheets-2356.pdf | DO-201AD, Axial | 2 | 9 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | e3 | PURE TIN | AEC-Q101 | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 100μA | Schottky | 80A | 1 | 3A | 200V | 100μA @ 200V | 950mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| EM01V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em01v1-datasheets-7751.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 400V | 1A | 1A | 400V | 10μA @ 400V | 970mV @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| RGP02-12E-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp0220ee354-datasheets-6870.pdf | DO-204AL, DO-41, Axial | 12 Weeks | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | Standard | 1.2kV | 500mA | 1200V | 5μA @ 1200V | 1.8V @ 100mA | 500mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ESH1D-M3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh1be361t-datasheets-4197.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | 1A | 900mV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 50A | 25 ns | Standard | 200V | 1A | 1A | 25pF @ 4V 1MHz | 1μA @ 200V | 900mV @ 1A | -55°C~175°C |
