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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S3JHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 30pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.15V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG21MHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21ke3tr-datasheets-0745.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 1000V | 1μA @ 1000V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AS01V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-eu2z-datasheets-5367.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 400V | 600mA | 0.6A | 400V | 10μA @ 400V | 1.5V @ 600mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| EM 1AW | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em1av1-datasheets-0534.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 1A | 600V | 10μA @ 600V | 970mV @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| BYG20GHE3_A/H | Vishay Semiconductor Diodes Division | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg20je3tr-datasheets-4525.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Avalanche | 400V | 1μA @ 400V | 1.4V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ES2AHM3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | DO-214AA, SMB | 2 | 52 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 30 ns | Standard | 50V | 2A | 50A | 1 | 2A | 18pF @ 4V 1MHz | 50V | 10μA @ 50V | 900mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||
| SS215 R5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss210r5g-datasheets-0441.pdf | DO-214AA, SMB | 20 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 950mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| EM 1AV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em1av1-datasheets-0534.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 1A | 600V | 10μA @ 600V | 970mV @ 1A | 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| EM01V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em01v1-datasheets-7751.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 1A | 400V | 10μA @ 400V | 970mV @ 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| EM01AV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em01av1-datasheets-7935.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 600V | 1A | 1A | 600V | 10μA @ 600V | 970mV @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| EM 1V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em1v1-datasheets-1102.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 10μA @ 400V | 970mV @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AU02ZWK | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-au02zv1-datasheets-8400.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400 ns | Standard | 200V | 800mA | 0.8A | 200V | 10μA @ 200V | 1.3V @ 800mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| EM01AV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em01av1-datasheets-7935.pdf | Axial | 12 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 1A | 600V | 10μA @ 600V | 970mV @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EM 1AV0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-em1av1-datasheets-0534.pdf | Axial | 12 Weeks | EAR99 | Standard Recovery >500ns, > 200mA (Io) | Standard | 600V | 10μA @ 600V | 970mV @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AU02ZV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-au02zv1-datasheets-8400.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400 ns | Standard | 200V | 800mA | 0.8A | 200V | 10μA @ 200V | 1.3V @ 800mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| BYG21KHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21ke3tr-datasheets-0745.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 800V | 1μA @ 800V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ESH1C-E3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh1be361t-datasheets-4197.pdf | DO-214AC, SMA | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 900mV | 50A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 50A | 150V | 25 ns | 25 ns | Standard | 150V | 1A | 1A | 1μA @ 150V | 900mV @ 1A | -55°C~175°C | ||||||||||||||||||||||
| BYG21KHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21ke3tr-datasheets-0745.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 800V | 1μA @ 800V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GL34JHE3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gl34ge398-datasheets-1363.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | AEC-Q101 | END | WRAP AROUND | 260 | GL34J | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 10A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 10A | 600V | 1.5 μs | 1.5 μs | Standard | 600V | 500mA | 0.5A | 4pF @ 4V 1MHz | 5μA @ 600V | 1.3V @ 500mA | -65°C~175°C | ||||||||||||||||||
| SR306HR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sr304a0g-datasheets-2356.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 700mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GL34GHE3/98 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gl34ge398-datasheets-1363.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | AEC-Q101 | END | WRAP AROUND | 260 | GL34G | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 1.2V | 10A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 10A | 400V | 1.5 μs | 1.5 μs | Standard | 400V | 500mA | 0.5A | 4pF @ 4V 1MHz | 5μA @ 400V | 1.2V @ 500mA | -65°C~175°C | |||||||||||||||||
| BYG23MHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg23me3tr-datasheets-6935.pdf | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 5μA | 75ns | Avalanche | 30A | 1 | 1.5A | 1000V | 5μA @ 1000V | 1.7V @ 1A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||
| GI501-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi504e354-datasheets-3559.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI501 | 2 | Single | 1 | Rectifier Diodes | 1.1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 100A | 100V | 2 μs | 2 μs | Standard | 100V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 9.4A | -50°C~150°C | |||||||||||||||||||||
| 1N5400-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-1n5407e354-datasheets-0147.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 1N5400 | 2 | Single | 1 | Rectifier Diodes | 3A | 1.2V | 200A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 200A | 50V | Standard | 50V | 3A | 1 | 3A | 30pF @ 4V 1MHz | 5μA @ 50V | 1.2V @ 3A | -55°C~150°C | ||||||||||||||||||||||
| SBRS5641T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | SMB | 5 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS01V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-eu2z-datasheets-5367.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 400V | 600mA | 0.6A | 400V | 10μA @ 400V | 1.5V @ 600mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| BYG21MHE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21ke3tr-datasheets-0745.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 1000V | 1μA @ 1000V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AS01WK | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-eu2z-datasheets-5367.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 400V | 600mA | 0.6A | 400V | 10μA @ 400V | 1.5V @ 600mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| AS01WS | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-eu2z-datasheets-5367.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 400V | 600mA | 0.6A | 400V | 10μA @ 400V | 1.5V @ 600mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| P300A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-p300ke354-datasheets-4081.pdf | DO-201AD, Axial | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 200A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 200A | 50V | 2 μs | 2 μs | Standard | 50V | 3A | 1 | 3A | 30pF @ 4V 1MHz | 5μA @ 50V | 1.2V @ 3A | -50°C~150°C |
