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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ES3DHE3J_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 21 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | Standard | 200V | 3A | 45pF @ 4V 1MHz | 200V | 10μA @ 200V | 900mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE100PWJ-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se100pwjm3i-datasheets-8679.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 2.6μs | Standard | 78pF @ 4V 1MHz | 600V | 20μA @ 600V | 1.14V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPL-L2 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-sjpll2vl-datasheets-8561.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50 ns | Standard | 200V | 3A | 60A | 1 | 3A | 200V | 50μA @ 200V | 980mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| RU 1CV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ru1cv1-datasheets-8683.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.70 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 400ns | Standard | 0.2A | 1000V | 10μA @ 1000V | 3V @ 250mA | 200mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE100PWB-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se100pwjm3i-datasheets-8679.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | SlimDPAK | Standard Recovery >500ns, > 200mA (Io) | 2.6μs | Standard | 78pF @ 4V 1MHz | 100V | 20μA @ 100V | 1.14V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-40HE3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-40 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 500mV | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 30A | Schottky | 40V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 40V | 500mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||
| SJPJ-H3 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-sjpjh3-datasheets-8653.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 30V | 2A | 40A | 1 | 2A | 30V | 200μA @ 30V | 450mV @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SBR8E60P5-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 1 | R-PDSO-F3 | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 580μA | Super Barrier | 60V | 8A | 180A | 1 | 8A | 580μA @ 60V | 530mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| S8JCHM6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | Standard | 48pF @ 4V 1MHz | 600V | 10μA @ 600V | 985mV @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPX-F2VL | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/sanken-sjpxf2vr-datasheets-9513.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | Standard | 200V | 1.5A | 200V | 10μA @ 200V | 980mV @ 1.5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPJ-L3VR | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/sanken-sjpjl3vl-datasheets-1326.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 3A | 30V | 300μA @ 30V | 450mV @ 3A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RF 1BV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rf1bv1-datasheets-0061.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400ns | Standard | 0.6A | 800V | 10μA @ 800V | 2V @ 1A | 600mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU 3AV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ru3av-datasheets-8243.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400ns | Standard | 20A | 1 | 1.5A | 600V | 10μA @ 600V | 1.5V @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RM 1CV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rm1cv1-datasheets-8647.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 0.8A | 1000V | 5μA @ 800V | 1.2V @ 1A | 800mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HS5K R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-hs5gv7g-datasheets-3977.pdf | DO-214AB, SMC | 2 | 17 Weeks | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800V | 10μA | 75ns | Standard | 150A | 1 | 5A | 50pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.7V @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SK55C V7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50V | 500μA @ 50V | 750mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-20HE3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-20 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 20V | 30A | Schottky | 20V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 20V | 500mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||
| SB390-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | /files/diodesincorporated-sb3100t-datasheets-6159.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | 2 | 9 Weeks | 1.09999g | 2 | no | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Bright Tin (Sn) | WIRE | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 3A | 790mV | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 500μA | 90V | 80A | Schottky | 90V | 3A | 1 | 3A | 500μA @ 90V | 790mV @ 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| RM 2BV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rm2bv1-datasheets-8640.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 100A | 1 | 1.2A | 800V | 10μA @ 800V | 910mV @ 1.5A | 1.2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-30HE3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-30 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 30A | Schottky | 30V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 30V | 500mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||
| 20TQ040 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2012 | TO-220-2 | 6 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1400pF @ 5V 1MHz | 40V | 2.7mA @ 40V | 570mV @ 20A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SHV-06JV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | Axial | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RM 1CV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rm1cv1-datasheets-8647.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 0.8A | 1000V | 5μA @ 800V | 1.2V @ 1A | 800mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XBS304S19R-G | Torex Semiconductor Ltd |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/torexsemiconductorltd-xbs304s19rg-datasheets-8611.pdf | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | 8541.10.00.80 | DUAL | C BEND | 125°C | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300μA | 82 ns | Schottky | 40V | 3A | 60A | 1 | 3A | 180pF @ 1V 1MHz | 40V | 300μA @ 40V | 510mV @ 3A | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| NHP620LFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nhp620lfst1g-datasheets-8613.pdf | SOT-1023, 4-LFPAK | 4 | 33 Weeks | yes | FREE WHEEELING DIODE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G4 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 0.75μA | 200V | 50ns | Standard | 120A | 1 | 6A | 200V | 500nA @ 200V | 950mV @ 6A | 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SBR8E60P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | Common Cathode | NOT SPECIFIED | 1 | R-PDSO-F3 | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 580μA | Super Barrier | 60V | 8A | 180A | 1 | 8A | 580μA @ 60V | 530mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| S8GCHM6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | Standard | 48pF @ 4V 1MHz | 400V | 10μA @ 400V | 985mV @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK520C V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 300μA @ 200V | 950mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP30K | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/onsemiconductor-egp30g-datasheets-0866.pdf | 800V | 3A | DO-201AD, Axial | 75pF | Lead Free | 2 | 10 Weeks | 360mg | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | EGP30K | Single | 6.25W | 1 | Rectifier Diodes | 3A | 3A | 1.7V | 125A | ISOLATED | EFFICIENCY | 20 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125A | 5μA | 800V | 125A | 800V | 75 ns | 75 ns | Standard | 800V | 3A | 1 | 75pF @ 4V 1MHz | 5μA @ 800V | 1.7V @ 3A | -65°C~150°C | |||||||||||||||||||||||||||
| SJPB-L4 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-sjpbl4vl-datasheets-9700.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 3A | 60A | 1 | 3A | 40V | 300μA @ 40V | 550mV @ 3A | -40°C~150°C |
