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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S15GC M6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | Standard | 93pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.1V @ 15A | 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSSAF5L45-M3/6B | Vishay Semiconductor Diodes Division | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TMBS®, SlimSMA™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vssaf5l45m36a-datasheets-5016.pdf | DO-221AC, SMA Flat Leads | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | Single | 1 | R-PDSO-F2 | 5A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 650μA | 45V | 100A | Schottky | 45V | 3A | 1 | 3A | 740pF @ 4V 1MHz | 650μA @ 45V | 560mV @ 5A | -40°C~150°C | ||||||||||||||||||||||||||||||
| B530CQ-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-b560cq13f-datasheets-3491.pdf | DO-214AB, SMC | 2 | 19 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 30V | 5A | 100A | 1 | 5A | 300pF @ 4V 1MHz | 30V | 500μA @ 30V | 700mV @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SK84C V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 8A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK83C V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 500μA @ 30V | 8A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF63G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf68ga0g-datasheets-7049.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 5μA | 35ns | Standard | 150A | 1 | 6A | 100pF @ 4V 1MHz | 150V | 5μA @ 150V | 975mV @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| SBR8B60P5-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr8b60p57d-datasheets-8344.pdf | PowerDI™ 5 | 3 | 16 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 220μA | Super Barrier | 60V | 5A | 170A | 1 | 5A | 60V | 220μA @ 60V | 600mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SR806 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sr806a0g-datasheets-6773.pdf | DO-201AD, Axial | 2 | 9 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 500μA | Schottky | 150A | 1 | 8A | 60V | 500μA @ 60V | 700mV @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| SBR8E20P5-13D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr8e20p513d-datasheets-8455.pdf | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500μA | Super Barrier | 20V | 8A | 180A | 1 | 8A | 20V | 500μA @ 20V | 450mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||
| CMC02(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-cmc02te12lqm-datasheets-8457.pdf | SOD-128 | 12 Weeks | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA | 400V | 30A | Standard | 10μA @ 400V | 1V @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SR805 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sr806a0g-datasheets-6773.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50V | 500μA @ 50V | 700mV @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR8E20P5-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr8e20p513d-datasheets-8455.pdf | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500μA | Super Barrier | 20V | 8A | 180A | 1 | 8A | 20V | 500μA @ 20V | 450mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||
| GP30D-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30D | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 5 μs | 5 μs | Standard | 200V | 3A | 1 | 3A | 5μA @ 200V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||||||||||||
| GP30A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1.2V | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 125A | 50V | 5 μs | 5 μs | Standard | 50V | 3A | 1 | 3A | 5μA @ 50V | 1.2V @ 3A | -65°C~175°C | ||||||||||||||||||||||||
| 6A005B-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-6a04g-datasheets-1152.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | 8541.10.00.80 | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 50V | 6A | 300A | 1 | 6A | 100pF @ 4V 1MHz | 50V | 10μA @ 50V | 1V @ 6A | -55°C~125°C | ||||||||||||||||||||||||||||||||||
| SF64G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf68ga0g-datasheets-7049.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 5μA | 35ns | Standard | 150A | 1 | 6A | 100pF @ 4V 1MHz | 200V | 5μA @ 200V | 975mV @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| SJPL-H2 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-sjplh2vl-datasheets-1847.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | unknown | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50 ns | Standard | 200V | 2A | 25A | 1 | 2A | 200V | 50μA @ 200V | 980mV @ 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||
| RBR2L60BTE25 | ROHM Semiconductor | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.80 | DUAL | C BEND | 260 | 150°C | 10 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | Schottky | 60V | 2A | 50A | 1 | 2A | 60V | 150μA @ 60V | 520mV @ 2A | 150°C Max | ||||||||||||||||||||||||||||||||||
| SF45GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf46gr0g-datasheets-7907.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 80pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 4A | 4A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| B520CQ-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-b560cq13f-datasheets-3491.pdf | DO-214AB, SMC | 2 | 19 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 20V | 5A | 100A | 1 | 5A | 300pF @ 4V 1MHz | 20V | 500μA @ 20V | 550mV @ 5A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SK55C R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 22 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50V | 500μA @ 50V | 750mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVTS1045EMFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-nrvts1045emfst1g-datasheets-5397.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 4 Weeks | ACTIVE (Last Updated: 2 weeks ago) | yes | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 150°C | 1 | Rectifier Diodes | R-PDSO-F5 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | Schottky | 45V | 10A | 1 | 300pF @ 45V 1MHz | 45V | 50μA @ 45V | 600mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SGL41-50HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-50 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 50V | 30A | Schottky | 50V | 1A | 1A | 80pF @ 4V 1MHz | 500μA @ 50V | 700mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||
| RS3DHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs3be357t-datasheets-1616.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | RS3D | 150°C | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150 ns | Standard | 200V | 3A | 100A | 1 | 3A | 44pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.3V @ 2.5A | -55°C~150°C | ||||||||||||||||||||||||||
| NRVBS260T3G-RG01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/onsemiconductor-mbrs260t3g-datasheets-3567.pdf | DO-214AA, SMB | 14 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 200μA @ 60V | 630mV @ 2A | 2A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPB-L6 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/sanken-sjpbl6vl-datasheets-9561.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | LOW LEAKAGE CURRENT, LOW NOISE | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 60V | 3A | 50A | 1 | 3A | 60V | 300μA @ 60V | 700mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||
| V10PM6-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v10pm6m3h-datasheets-5297.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1650pF @ 4V 1MHz | 60V | 800μA @ 60V | 640mV @ 10A | 10A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJPE-H4VL | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-sjpeh4vr-datasheets-4022.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 2A | 40V | 50μA @ 40V | 600mV @ 2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-60HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | END | WRAP AROUND | 250 | SGL41-60 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 60V | 30A | Schottky | 60V | 1A | 1A | 80pF @ 4V 1MHz | 500μA @ 60V | 700mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||
| 6A01B-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-6a04g-datasheets-1152.pdf | R6, Axial | 10 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 100V | 6A | 100pF @ 4V 1MHz | 100V | 10μA @ 100V | 1V @ 6A | -55°C~125°C |
