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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| ES3AHR7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 20 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 45pF @ 4V 1MHz | 50V | 10μA @ 50V | 950mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESH3B V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 45pF @ 4V 1MHz | 100V | 5μA @ 100V | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT52A-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | 1.4A | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 50A | 50V | 200 ns | 200 ns | Avalanche | 50V | 1.4A | 0.85A | 5μA @ 50V | 1.3V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| BYT54A-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 100 ns | 100 ns | Avalanche | 50V | 1.25A | 0.75A | 5μA @ 50V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| CMHD2003 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmhd2003trpbfree-datasheets-3648.pdf | SOD-123 | 7 Weeks | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 250V | 50ns | Standard | 1A | 0.2A | 1.5pF @ 0V 1MHz | 250V | 100nA @ 200V | 1V @ 100mA | 200mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV12-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv16tap-datasheets-0526.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 40A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 40A | 100V | 300 ns | 300 ns | Avalanche | 100V | 1.5A | 1 | 5μA @ 100V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| HS3F V7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-hs3av7g-datasheets-5516.pdf | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 300V | 10μA @ 300V | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT54A-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | 1.25A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 1.5V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 100 ns | 100 ns | Avalanche | 50V | 1.25A | 0.75A | 5μA @ 50V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| GP10-4002E-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2013 | DO-204AL, DO-41, Axial | 12 Weeks | DO-204AL | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 100V | 1A | 8pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYV37-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv38tap-datasheets-6570.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 50A | 800V | 300 ns | 300 ns | Avalanche | 800V | 2A | 1 | 2A | 5μA @ 800V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| BYT52B-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | 1.4A | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | 100V | 200 ns | 200 ns | Avalanche | 100V | 1.4A | 0.85A | 5μA @ 100V | 1.3V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| S5D R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 2 | 17 Weeks | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 10μA | 1.5μs | Standard | 100A | 1 | 5A | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.15V @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| BYT52B-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | 1.4A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | E-LALF-W2 | 1.4A | 1.3V | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | 100V | 200 ns | 200 ns | Avalanche | 100V | 1.4A | 0.85A | 5μA @ 100V | 1.3V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| RS2B-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/diodesincorporated-rs2ma13f-datasheets-1478.pdf | 100V | 1.5A | DO-214AA, SMB | 30pF | 4.57mm | 2.42mm | 3.94mm | Exempt | 2 | 10 Weeks | 92.986436mg | 2 | no | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | RS2B | 2 | Single | 40 | 1 | Rectifier Diodes | 1.5A | 1.5A | 1.3V | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | 150 ns | 150 ns | Standard | 100V | 1.5A | 1 | 100V | 30pF @ 4V 1MHz | 5μA @ 100V | 1.3V @ 1.5A | -65°C~150°C | ||||||||||||||||||||||||
| BYV37-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv38tap-datasheets-6570.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 50A | 800V | 300 ns | 300 ns | Avalanche | 800V | 2A | 1 | 2A | 5μA @ 800V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| BYX83TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byx86tap-datasheets-4874.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 50A | 400V | 4 μs | 4 μs | Avalanche | 400V | 2A | 1 | 2A | 20pF @ 4V 1MHz | 1μA @ 400V | 1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| ESH3D V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 45pF @ 4V 1MHz | 200V | 5μA @ 200V | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT51D-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 1.1V | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 50A | 200V | 4 μs | 4 μs | Avalanche | 200V | 1.5A | 1A | 1μA @ 200V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| B320Q-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-b360q13f-datasheets-6517.pdf | DO-214AB, SMC | 2 | 19 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 20V | 3A | 100A | 1 | 3A | 200pF @ 4V 1MHz | 20V | 500μA @ 20V | 500mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| GP10-4005E-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 12 Weeks | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 500V | 1A | 8pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HS3D V7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-hs3av7g-datasheets-5516.pdf | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 200V | 10μA @ 200V | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP10GE-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 12 Weeks | 2 | No | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SJPD-D5 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-sjpdd5-datasheets-7490.pdf | 2-SMD, J-Lead | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40 ns | Standard | 500V | 1A | 1A | 500V | 10μA @ 500V | 1.4V @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| HS3B V7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-hs3av7g-datasheets-5516.pdf | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 80pF @ 4V 1MHz | 100V | 10μA @ 100V | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BY527TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-by527tr-datasheets-7495.pdf | 2A | SOD-57, Axial | 12 Weeks | 2 | Silver, Tin | No | Single | SOD-57 | 2A | 1.65V | 50A | Standard Recovery >500ns, > 200mA (Io) | 1μA | 800V | 50A | 800V | 4 μs | 4 μs | Avalanche | 800V | 2A | 16pF @ 4V 1MHz | 800V | 1μA @ 800V | 1.65V @ 10A | 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| B330Q-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-b360q13f-datasheets-6517.pdf | DO-214AB, SMC | 2 | 13 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 30V | 3A | 100A | 1 | 3A | 200pF @ 4V 1MHz | 30V | 500μA @ 30V | 500mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| GP10-4004E-E3/53 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 12 Weeks | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 3 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT54B-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 100 ns | 100 ns | Avalanche | 100V | 1.25A | 0.75A | 5μA @ 100V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| SR504HR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sr506a0g-datasheets-0793.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 5A | 5A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AR1PGHM3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar1pgm384a-datasheets-3137.pdf | DO-220AA | 10 Weeks | Unknown | 2 | Tin | No | AR1PG | Single | DO-220AA (SMP) | 1A | 1.25V | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30A | 1μA | 400V | 30A | 400V | 140 ns | 140 ns | Avalanche | 400V | 1A | 12.5pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.25V @ 1A | 1A | -55°C~175°C |
