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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYG24G-E3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg24je3tr-datasheets-3713.pdf | DO-214AC, SMA | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | BYG24G | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1.5A | 1.25V | 30A | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 30A | 400V | 140 ns | 140 ns | Avalanche | 400V | 1.5A | 1 | 1μA @ 400V | 1.25V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| ES3D V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 45pF @ 4V 1MHz | 200V | 10μA @ 200V | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR504HA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr506a0g-datasheets-0793.pdf | DO-201AD, Axial | 9 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 5A | 5A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR503HR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr506a0g-datasheets-0793.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 500μA @ 30V | 550mV @ 5A | 5A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES3B V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 45pF @ 4V 1MHz | 100V | 10μA @ 100V | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYW53-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byw56tr-datasheets-1194.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 50A | 400V | 4 μs | 4 μs | Avalanche | 400V | 2A | 1 | 2A | 1μA @ 400V | 1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| MUR305S V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 50V | 5μA @ 50V | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK36BHR5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 750mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK33BHR5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk34br5g-datasheets-0769.pdf | DO-214AA, SMB | 20 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 500μA @ 30V | 500mV @ 3A | 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS2H9HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | Tape & Reel (TR) | 1 | Non-RoHS Compliant | 2014 | /files/vishaysemiconductordiodesdivision-ss2h10e35bt-datasheets-0372.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 10μA | Schottky | 75A | 1 | 2A | 90V | 10μA @ 90V | 790mV @ 2A | 2A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| RB051L-40TE25 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 125°C | -40°C | ROHS3 Compliant | 2007 | 40V | 3A | DO-214AC, SMA | 4.5mm | 2.2mm | 2.6mm | Lead Free | 2 | 10 Weeks | No SVHC | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | Standard | DUAL | C BEND | 260 | RB051L-40 | 2 | Single | 10 | 1 | Rectifier Diodes | 125°C | 3A | 3A | 450mV | 70A | 1mA | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 70A | 1mA | 40V | 70A | 20V | Schottky | 20V | 3A | 1 | 1mA @ 20V | 450mV @ 3A | 125°C Max | ||||||||||||||||||||||||
| MUR315S V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 16 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 150V | 5μA @ 150V | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UG4A-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 50V | 4A | 150A | 1 | 4A | 20pF @ 4V 1MHz | 50V | 5μA @ 50V | 950mV @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| ES3A V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 45pF @ 4V 1MHz | 50V | 10μA @ 50V | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S5D V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESH3C V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 45pF @ 4V 1MHz | 150V | 5μA @ 150V | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S5J V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG24J-E3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg24je3tr-datasheets-3713.pdf | DO-214AC, SMA | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | BYG24J | 2 | Single | 40 | 1 | Rectifier Diodes | 1.5A | 1.25V | 30A | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 30A | 600V | 140 ns | 140 ns | Avalanche | 600V | 1.5A | 1 | 1μA @ 600V | 1.25V @ 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| UG4B-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 100V | 4A | 150A | 1 | 4A | 20pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| UG4C-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 150V | 4A | 150A | 1 | 4A | 20pF @ 4V 1MHz | 150V | 5μA @ 150V | 950mV @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| V8PA10HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | 1 | Non-RoHS Compliant | 2018 | /files/vishaysemiconductordiodesdivision-v8pa10m3i-datasheets-9674.pdf | DO-221BC, SMA Flat Leads Exposed Pad | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 800μA | Schottky | 100A | 1 | 2.7A | 850pF @ 4V 1MHz | 100V | 800μA @ 100V | 760mV @ 8A | 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| S5A V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 60pF @ 4V 1MHz | 50V | 10μA @ 50V | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S5M V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 60pF @ 4V 1MHz | 10μA @ 1000V | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG24D-E3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg24je3tr-datasheets-3713.pdf | DO-214AC, SMA | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | BYG24D | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1.5A | 1.25V | 30A | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 30A | 200V | 140 ns | 140 ns | Avalanche | 200V | 1.5A | 1 | 1μA @ 200V | 1.25V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| UG4C-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 150V | 4A | 150A | 1 | 4A | 20pF @ 4V 1MHz | 150V | 5μA @ 150V | 950mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SK315AHR3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 950mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS2H9HE3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss2h10e35bt-datasheets-0372.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 10μA | Schottky | 75A | 1 | 2A | 90V | 10μA @ 90V | 790mV @ 2A | 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| S5B V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 60pF @ 4V 1MHz | 100V | 10μA @ 100V | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UG4D-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug4de354-datasheets-0940.pdf | DO-201AD, Axial | 2 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Standard | 200V | 4A | 150A | 1 | 4A | 20pF @ 4V 1MHz | 200V | 5μA @ 200V | 950mV @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| CDBC260LR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbc2100lrhf-datasheets-4704.pdf | DO-214AB, SMC | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | YES | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 500μA | Schottky | 70A | 1 | 2A | 30pF @ 4V 1MHz | 60V | 500μA @ 60V | 550mV @ 2A | 2A | -50°C~150°C |
