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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| IDK04G65C5XTMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idk04g65c5xtma2-datasheets-4793.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 2 | yes | EAR99 | Halogen Free | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 130pF @ 1V 1MHz | 650V | 670μA @ 650V | 1.8V @ 4A | 4A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CURC302-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-curc307g-datasheets-6044.pdf | DO-214AB, SMC | 2 | 12 Weeks | EAR99 | LOW LEAKAGE CURRENT | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50 ns | Standard | 100V | 3A | 100A | 1 | 3A | 100V | 5μA @ 100V | 1V @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| BYT54D-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 100 ns | 100 ns | Avalanche | 200V | 1.25A | 0.75A | 5μA @ 200V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| SDT5H100SB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-sdt5h100sb13-datasheets-4760.pdf | DO-214AA, SMB | 2 | 18 Weeks | FREE WHEELING DIODE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 100μA | Schottky | 120A | 1 | 5A | 100V | 100μA @ 100V | 620mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| EU02A | Sanken | $3.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-eu02av1-datasheets-9607.pdf | Axial | Lead Free | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400 ns | Standard | 600V | 1A | 15A | 1A | 600V | 10μA @ 600V | 1.4V @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| IDP20E65D2XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idp20e65d2xksa1-datasheets-4774.pdf | TO-220-2 | Lead Free | 2 | 16 Weeks | 2 | yes | EAR99 | PD-CASE | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 40A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40μA | 650V | 120A | 43 ns | Standard | 650V | 40A | 1 | 40μA @ 650V | 2.2V @ 20A | 40A DC | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| AR1PMHM3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar1pgm384a-datasheets-3137.pdf | DO-220AA | 3.61mm | 1.15mm | 2.18mm | 10 Weeks | Unknown | 2 | Tin | No | AR1PM | Single | DO-220AA (SMP) | 1A | 1.6V | 25A | Fast Recovery =< 500ns, > 200mA (Io) | 25A | 1μA | 1kV | 25A | 1kV | 120 ns | 120 ns | Avalanche | 1kV | 1A | 8.5pF @ 4V 1MHz | 1000V | 1μA @ 1000V | 1.6V @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| BYT52D-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-LALF-W2 | 1.4A | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 200 ns | 200 ns | Avalanche | 200V | 1.4A | 0.85A | 5μA @ 200V | 1.3V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| S8JC V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | Standard | 48pF @ 4V 1MHz | 600V | 10μA @ 600V | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XBS203V19R-G | Torex Semiconductor Ltd |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/torexsemiconductorltd-xbs203v19rg-datasheets-4784.pdf | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | 8541.10.00.80 | YES | DUAL | C BEND | 125°C | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 3000μA | 70ns | Schottky | 50A | 1 | 2A | 280pF @ 1V 1MHz | 30V | 3mA @ 30V | 390mV @ 2A | 2A | 125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS34-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 40V | 3A | 100A | 1 | 3A | 40V | 500μA @ 40V | 500mV @ 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| BYW33-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw36tr-datasheets-0780.pdf | 2A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 2A | 1.1V | 50A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 50A | 300V | 200 ns | 200 ns | Avalanche | 300V | 2A | 1 | 2A | 5μA @ 300V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| SS32-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 20V | 3A | 100A | 1 | 3A | 20V | 500μA @ 20V | 500mV @ 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SS33-M3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 30V | 3A | 100A | 1 | 3A | 30V | 500μA @ 30V | 500mV @ 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SF1200-TR | Vishay Semiconductor Diodes Division | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf1600tr-datasheets-7193.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1A | 3.4V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.2kV | 30A | 1.2kV | 75 ns | 75 ns | Standard | 1.2kV | 1A | 1A | 1200V | 5μA @ 1200V | 3.4V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| S8MC V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | DO-214AB, SMC | 10 Weeks | DO-214AB (SMC) | Standard Recovery >500ns, > 200mA (Io) | Standard | 48pF @ 4V 1MHz | 10μA @ 1000V | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURS120HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-murs120e352t-datasheets-6799.pdf | DO-214AA, SMB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | C BEND | 260 | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 35 ns | Standard | 200V | 2A | 40A | 1 | 2A | 200V | 2μA @ 200V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| EGP20K | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-egp20d-datasheets-0711.pdf | 800V | 2A | 3.6mm | DO-204AC, DO-15, Axial | 45pF | 7.6mm | Lead Free | 2 | 2 Weeks | 300mg | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | EGP20K | Single | 3.15W | 1 | Rectifier Diodes | 2A | 2A | 1.7V | 75A | ISOLATED | EFFICIENCY | 40 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 5μA | 800V | 75A | 800V | 75 ns | 75 ns | Standard | 800V | 2A | 1 | 45pF @ 4V 1MHz | 5μA @ 800V | 1.7V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||
| BYT53A-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.9A | 1.1V | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 50A | 50V | 50 ns | 50 ns | Avalanche | 50V | 1.9A | 1 | 5μA @ 50V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| IDP15E60XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/infineontechnologies-idp15e60xksa1-datasheets-4714.pdf | TO-220-2 | Lead Free | 2 | 16 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | 3 | Single | 1 | 29.2A | 2V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 60A | 87 ns | Standard | 600V | 29.2A | 1 | 50μA @ 600V | 2V @ 15A | 29.2A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-10ETS08FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs10ets12fpm3-datasheets-1522.pdf | TO-220-2 Full Pack | 10.6mm | 8.9mm | 4.8mm | 2 | 12 Weeks | 2 | EAR99 | UL APPROVED | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | Single | NOT APPLICABLE | 1 | 10A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 50μA | 800V | Standard | 800V | 10A | 1 | 50μA @ 800V | 1.1V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| BYT53A-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byt53atr-datasheets-4713.pdf | 1.9A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.9A | 50A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 50A | 50V | 50 ns | 50 ns | Avalanche | 50V | 1.9A | 1 | 5μA @ 50V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| EU 1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-eu1-datasheets-4722.pdf | Axial | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.70 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 400ns | Standard | 15A | 0.5A | 400V | 10μA @ 400V | 2.5V @ 250mA | 250mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT54D-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt54mtap-datasheets-4950.pdf | 1.25A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.25A | 1.5V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 100 ns | 100 ns | Avalanche | 200V | 1.25A | 0.75A | 5μA @ 200V | 1.5V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| EU 2A | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-eu2av1-datasheets-8856.pdf | Axial | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 400ns | Standard | 15A | 1A | 600V | 10μA @ 600V | 1.4V @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETL1506SHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsetl15061hm3-datasheets-4215.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15μA | 210 ns | Standard | 600V | 15A | 200A | 1 | 600V | 15μA @ 600V | 1.07V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| EU02 | Sanken | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-eu02v1-datasheets-8008.pdf | Axial | Lead Free | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.80 | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400 ns | Standard | 400V | 1A | 15A | 1A | 400V | 10μA @ 400V | 1.4V @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SURF860 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-220-2 Full Pack, Isolated Tab | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Schottky | 600V | 2μA @ 600V | 2.2V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYT51G-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | No | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1.5A | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 50A | 400V | 4 μs | 4 μs | Avalanche | 400V | 1.5A | 1A | 1μA @ 400V | 1.1V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| BYV13-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv16tap-datasheets-0526.pdf | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 1.5A | 1.5V | 40A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 40A | 400V | 300 ns | 300 ns | Avalanche | 400V | 1.5A | 1 | 5μA @ 400V | 1.5V @ 1A | -55°C~175°C |
