Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Tolerance | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Construction | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Rated Power Dissipation (P) | Resistor Type | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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RB160M-50TR | ROHM Semiconductor | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | RB160M-50 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 170pF @ 1V 1MHz | 30V | 1.5mA @ 30V | 360mV @ 1A | 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CDBC520-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-cdbc540g-datasheets-1463.pdf&product=comchiptechnology-cdbc520g-5999470 | DO-214AB, SMC | 2 | yes | EAR99 | 8541.10.00.80 | DUAL | C BEND | 260 | CDBC520 | 2 | 125°C | 30 | 1 | R-PDSO-C2 | 100A | 500μA | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 20V | 5A | 1 | 5A | 500μA @ 20V | 550mV @ 5A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
SK59B M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk510br5g-datasheets-0101.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 100μA @ 90V | 850mV @ 5A | 5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMPD2004 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpd2004atrpbfree-datasheets-2953.pdf | TO-236-3, SC-59, SOT-23-3 | 18 Weeks | compliant | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Small Signal =< 200mA (Io), Any Speed | 300V | 50ns | Standard | 4A | 0.225A | 5pF @ 0V 1MHz | 240V | 100nA @ 240V | 1V @ 100mA | 200mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYG22AHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg22de3tr-datasheets-0872.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Avalanche | 50V | 1μA @ 50V | 1.1V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYX85TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byx86tap-datasheets-4874.pdf | 2A | SOD-57, Axial | 20pF | 2 | 12 Weeks | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 50A | 800V | 4 μs | 4 μs | Avalanche | 800V | 2A | 1 | 2A | 20pF @ 4V 1MHz | 1μA @ 800V | 1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
SS35-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 50V | 3A | 100A | 1 | 3A | 50V | 500μA @ 50V | 750mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
SS22/1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ZWS-NI | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | WIRE WOUND | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | 20V | 2A | DO-214AA, SMB | Contains Lead | 3 | 13 Weeks | 2.2Ohm | EAR99 | 8533.21.00.80 | 10% | e3 | Matte Tin (Sn) | Standard | SS22 | Cemented | Fixed Resistors | 2A | 15W | FIXED RESISTOR | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 2A | 400μA @ 20V | 500mV @ 2A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
MUR320SB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur340sbr5g-datasheets-1487.pdf | DO-214AA, SMB | 16 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 45pF @ 4V 1MHz | 200V | 5μA @ 200V | 900mV @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYG22DHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg22de3tr-datasheets-0872.pdf | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | YES | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 1μA | 25ns | Avalanche | 35A | 1 | 2A | 200V | 1μA @ 200V | 1.1V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
BYT51J-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-byt51gtap-datasheets-4743.pdf | 1.5A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | Single | 30 | 1 | Rectifier Diodes | 1.5A | 1.1V | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 50A | 600V | 4 μs | 4 μs | Avalanche | 600V | 1.5A | 1A | 1μA @ 600V | 1.1V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
BY268TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by268tr-datasheets-4752.pdf | SOD-57, Axial | 12 Weeks | 2 | Silver, Tin | Single | SOD-57 | 800mA | 1.25V | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 2μA | 1.4kV | 20A | 1.4kV | 400 ns | 400 ns | Standard | 1.4kV | 800mA | 1400V | 2μA @ 1400V | 1.25V @ 400mA | 800mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
BYT52G-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | 1.4A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.4A | 1.3V | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 200 ns | 200 ns | Avalanche | 400V | 1.4A | 0.85A | 5μA @ 400V | 1.3V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
SR515HR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr506a0g-datasheets-0793.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 1.05V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS24/1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | 40V | 2A | DO-214AA, SMB | Contains Lead | 2 | Standard | SS24 | DO-214AA (SMB) | 2A | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 2A | 40V | 400μA @ 40V | 500mV @ 2A | 2A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-8TQ080STRRHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq080shm3-datasheets-3979.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 550μA | Schottky | 80V | 8A | 230A | 1 | 500pF @ 5V 1MHz | 80V | 550μA @ 80V | 720mV @ 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
BYT52D-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt52mtr-datasheets-0791.pdf | 1.4A | SOD-57, Axial | 2 | 12 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | E-LALF-W2 | 1.4A | 1.3V | 50A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 200 ns | 200 ns | Avalanche | 200V | 1.4A | 0.85A | 5μA @ 200V | 1.3V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
MUR340S V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 400V | 10μA @ 400V | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SF35G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300V | 5μA | 35ns | Standard | 125A | 1 | 3A | 60pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
SSL23 M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ssl22m4g-datasheets-4898.pdf | DO-214AA, SMB | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 400μA | Schottky | 80A | 1 | 2A | 30V | 400μA @ 30V | 410mV @ 2A | 2A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
MUR360S V6G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 10μA @ 600V | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SS22HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss23e352t-datasheets-1000.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 125°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | Schottky | 20V | 2A | 75A | 1 | 2A | 20V | 400μA @ 20V | 500mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
SSL24 M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ssl22m4g-datasheets-4898.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 400μA @ 40V | 410mV @ 2A | 2A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SF36G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NRVB540MFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2013 | /files/onsemiconductor-mbr540mfst3g-datasheets-9671.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 Weeks | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW POWER LOSS | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | DUAL | FLAT | 5 | Single | 1 | 5A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 40V | 150A | 2000μA | Schottky | 40V | 5A | 1 | 5A | 2mA @ 40V | 580mV @ 5A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||
CD214B-B3100R | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/bournsinc-cd214bb340r-datasheets-9456.pdf | 2-SMD, No Lead | 2 | 18 Weeks | LOW POWER LOSS | not_compliant | YES | DUAL | NOT SPECIFIED | CD214B | 150°C | NOT SPECIFIED | 1 | R-PDSO-N2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 500μA | Schottky | 80A | 1 | 3A | 180pF @ 4V 1MHz | 100V | 500μA @ 100V | 850mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
SF36G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf34ga0g-datasheets-1689.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 5μA | 35ns | Standard | 125A | 1 | 3A | 60pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
SS33-E3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | SS33 | 2 | Single | 40 | 1 | Rectifier Diodes | 3A | 500mV | 100A | 500μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 100A | Schottky | 30V | 3A | 1 | 3A | 500μA @ 30V | 500mV @ 3A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||
SB520A-E3/73 | Vishay Semiconductor Diodes Division | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb540ae354-datasheets-6400.pdf | DO-201AD, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB520 | 2 | Single | 1 | Rectifier Diodes | 5A | 500mV | 150A | 500μA | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 20V | 150A | Schottky | 20V | 5A | 1 | 5A | 500μA @ 20V | 500mV @ 5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
SS36-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss34e357t-datasheets-6026.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | MATTE TIN | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 60V | 3A | 100A | 1 | 3A | 60V | 500μA @ 60V | 750mV @ 3A | -55°C~150°C |
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