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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| BYWB29-100-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8A | 8541.10.00.80 | e3 | 100V | SINGLE | GULL WING | 245 | BYWB29-100 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.3V | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 100V | 25 ns | 25 ns | Standard | 100V | 8A | 1 | 10μA @ 100V | 1.3V @ 20A | -65°C~150°C | |||||||||||||||||||||||||||||
| VS-15AWL06FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs15awl06fntrm3-datasheets-5316.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | GULL WING | 260 | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HYPER ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-252AA | 120 ns | Standard | 600V | 15A | 180A | 1 | 600V | 10μA @ 600V | 1.05V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-12TQ040STRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs12tq040strrm3-datasheets-3727.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 150°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1750μA | Schottky | 40V | 15A | 250A | 1 | 900pF @ 5V 1MHz | 40V | 1.75mA @ 40V | 560mV @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| LSM835GE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm840ge3tr13-datasheets-3663.pdf | DO-215AB, SMC Gull Wing | 24 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | No | LSM835 | DO-215AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 8A | 35V | 2mA @ 35V | 520mV @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT1080S-M3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vbt1080sm38w-datasheets-3679.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600μA | Schottky | 80V | 10A | 100A | 1 | 80V | 600μA @ 80V | 810mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| HSM590JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm590je3tr13-datasheets-3681.pdf | DO-214AB, SMC | 24 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | e3 | Matte Tin (Sn) | HSM590 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 5A | 90V | 250μA @ 90V | 800mV @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESB8JTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | FESB8J | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 125A | 600V | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 8A | 10μA @ 600V | 1.5V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| HSM5100JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-hsm590je3tr13-datasheets-3681.pdf | DO-214AB, SMC | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | No | e3 | Matte Tin (Sn) | HSM5100 | Single | 5A | 800mV | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 100V | 200A | Schottky | 100V | 5A | 250μA @ 100V | 800mV @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SRAS2030 MNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sras2040rng-datasheets-6717.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 500μA @ 30V | 570mV @ 20A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYWB29-150-E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-150 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 1.3V | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 100A | 150V | 25 ns | 25 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||||
| SFAF1608G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfaf1608gc0g-datasheets-3698.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 100pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 16A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GIB1402-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gib1402e345-datasheets-3700.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | GIB1402 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 8A | 1 | 8A | 5μA @ 100V | 975mV @ 8A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| AU3PKHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pmm386a-datasheets-4086.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 45A | TO-277A | 75 ns | Avalanche | 800V | 1.4A | 1 | 42pF @ 4V 1MHz | 10μA @ 800V | 2.5V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| AU3PMHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pmm386a-datasheets-4086.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 45A | TO-277A | 75 ns | Avalanche | 1kV | 1.4A | 1 | 42pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 2.5V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| LSM840GE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm840ge3tr13-datasheets-3663.pdf | DO-215AB, SMC Gull Wing | 24 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | No | LSM840 | DO-215AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 8A | 40V | 2mA @ 40V | 520mV @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESB8BT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | FESB8B | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 950mV | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 950mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||
| FERD20S100SH | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | /files/stmicroelectronics-ferd20s100sts-datasheets-0954.pdf | TO-251-3, IPak, Short Leads | 3 | NRND (Last Updated: 7 months ago) | NO | SINGLE | NOT SPECIFIED | FERD20 | 175°C | NOT SPECIFIED | 1 | R-PSIP-T3 | 20A | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 110μA | FERD (Field Effect Rectifier Diode) | 1 | 100V | 100μA @ 100V | 780mV @ 10A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15TQ060STRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs15tq060sm3-datasheets-5891.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 150°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | Schottky | 60V | 15A | 260A | 1 | 720pF @ 5V 1MHz | 60V | 800μA @ 60V | 620mV @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-15EWX06FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs15ewx06fntrm3-datasheets-9545.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-252AA | 22 ns | Standard | 600V | 15A | 120A | 1 | 600V | 50μA @ 600V | 3.2V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VI20150SG-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20150sgm34w-datasheets-3677.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 150V | 140A | Schottky | 150V | 20A | 1 | 200μA @ 150V | 1.6V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| V20100SG-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vi20100sgm34w-datasheets-3278.pdf | TO-220-3 | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 3 | Common Anode | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 350μA | 100V | 150A | TO-220AB | Schottky | 100V | 20A | 1 | 350μA @ 100V | 1.07V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| SK20H45 R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk20h45r0g-datasheets-3636.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | NO | WIRE | NOT SPECIFIED | 200°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 500μA | Schottky | 275A | 1 | 20A | 45V | 150μA @ 45V | 550mV @ 20A | 20A | 200°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| SK20H45 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk20h45r0g-datasheets-3636.pdf | R6, Axial | 10 Weeks | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 150μA @ 45V | 550mV @ 20A | 20A | 200°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGF8JD C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugf8jdc0g-datasheets-3640.pdf | TO-220-2 Full Pack | 16 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | Standard | 600V | 500nA @ 600V | 2.3V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSB2045Y-M3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsb2045ym354-datasheets-7040.pdf | P600, Axial | 2 | 10 Weeks | 2.099991g | 600 | yes | EAR99 | LOW POWER LOSS | 8541.10.00.80 | e3 | MATTE TIN | IEC-61000-4-2 | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-PALF-W2 | 20A | 500mV | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250A | 1.2mA | 45V | Schottky | 45V | 6.5A | 1 | 45V | 2050pF @ 4V 1MHz | 1.2mA @ 45V | 580mV @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||
| FESB8FTHE3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | 125A | 300V | 50 ns | 50 ns | Standard | 300V | 8A | 1 | 8A | 10μA @ 300V | 1.3V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| SBRD8835LT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-sbrd8835lt4g-datasheets-3651.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | YES | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 35mA | 35V | Schottky | 35V | 8A | 1 | 8A | 1.4mA @ 35V | 510mV @ 8A | -65°C~150°C | ||||||||||||||||||||||||||||||
| AU3PJHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 45A | TO-277A | 75 ns | Avalanche | 600V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 600V | 1.9V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| FESB8DT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | FESB8D | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 125A | 200V | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 950mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| VS-20TQ040THN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20tq035thn3-datasheets-3597.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1400pF @ 5V 1MHz | 40V | 2.7mA @ 40V | 570mV @ 20A | 20A | -55°C~150°C |
