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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRF1060HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 60V | 150A | Schottky | 60V | 10A | 1 | 100μA @ 60V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| LSM140GE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm150ge3tr13-datasheets-3250.pdf | DO-215AA, SMB Gull Wing | 24 Weeks | EAR99 | No | 8541.10.00.80 | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 1A | 75A | 1A | 40V | 1mA @ 40V | 580mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA15IM200UC-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsa15im200uctrl-datasheets-3447.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75W | 200V | 250μA | TO-252AA | Schottky | 200A | 1 | 15A | 67pF @ 24V 1MHz | 200V | 250μA @ 200V | 940mV @ 15A | 15A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-15ETX06-1-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs15etx061m3-datasheets-3448.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14 Weeks | TO-262AA | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | Standard | 600V | 50μA @ 600V | 3.2V @ 15A | 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFF2008G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff2005gc0g-datasheets-6844.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 90pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 10A | 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DB2460600L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2014 | /files/panasonicelectroniccomponents-db2460600l-datasheets-3379.pdf | SOD-128 | 3.8mm | 850μm | 2.4mm | 2 | 10 Weeks | 2 | EAR99 | No | 8541.10.00.80 | DUAL | FLAT | DB24606 | 2 | Single | 1 | 3A | 700mV | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 350μA | 60V | 30A | 12 ns | Schottky | 60V | 3A | 1 | 3A | 40pF @ 10V 1MHz | 350μA @ 60V | 700mV @ 3A | 3A DC | 150°C Max | |||||||||||||||||||||||||||||||||||
| V10150S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v10150se34w-datasheets-6897.pdf | TO-220-3 | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T3 | 10A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 150V | 120A | TO-220AB | Schottky | 150V | 10A | 1 | 150μA @ 150V | 1.2V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| NGTD9R120F2WP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ngtd9r120f2wp-datasheets-3418.pdf | Die | Lead Free | 1 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | FREE WHEELING DIODE | YES | UPPER | NO LEAD | 175°C | 1 | S-XUUC-N1 | SINGLE | FAST RECOVERY | SILICON | 1200V | 1μA | Standard | 1 | 1200V | 1μA @ 1200V | 2.6V @ 15A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR30H100MFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/onsemiconductor-mbr30h100mfst1g-datasheets-4074.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 11 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-F5 | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 300A | Schottky | 100V | 30A | 1 | 100μA @ 100V | 900mV @ 30A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SBRD8360RLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/onsemiconductor-mbrd340rlg-datasheets-3980.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | GULL WING | NOT SPECIFIED | MBRD360 | 3 | 175°C | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSSO-G2 | CATHODE | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 200μA | Schottky | 60V | 3A | 1 | 3A | 200μA @ 60V | 600mV @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| VS-HFA08TB60SL-M3 | Vishay Semiconductor Diodes Division | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa08tb60sm3-datasheets-7189.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | Standard | 600V | 5μA @ 600V | 2.1V @ 16A | 8A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP6-06BS-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | AVALANCHE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsep606bstrl-datasheets-3428.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | DSEP6-06 | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 55W | 600V | 50μA | 15ns | Standard | 40A | 1 | 6A | 5pF @ 400V 1MHz | 600V | 50μA @ 600V | 2.66V @ 6A | 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VBT1045BP-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vbt1045bpm38w-datasheets-3362.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 10 ns | Schottky | 45V | 10A | 100A | 1 | 500μA @ 45V | 680mV @ 10A | 10A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VB20120SG-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb20120sge34w-datasheets-3434.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 245 | VB20120S | 3 | Single | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 20A | 150A | 250μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 120V | 150A | Schottky | 120V | 20A | 1 | 250μA @ 120V | 1.33V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| MBR16100HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1660c0g-datasheets-2557.pdf | TO-220-2 | 10 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 300μA @ 100V | 850mV @ 16A | 16A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VIT2060G-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vt2060gm34w-datasheets-5093.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Not Qualified | 20A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 60V | 100A | Schottky | 60V | 10A | 1 | 700μA @ 60V | 900mV @ 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| CEFB203-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | /files/comchiptechnology-cefb203g-datasheets-3353.pdf | DO-214AA, SMB | EAR99 | 8541.10.00.80 | CEFB203 | 150°C | 1 | Rectifier Diodes | 35A | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 200V | 25 ns | 25 ns | Standard | 200V | 2A | 2A | 5μA @ 200V | 875mV @ 2A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB1045HE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1060e381-datasheets-9582.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 100μA | Schottky | 150A | 1 | 10A | 45V | 100μA @ 45V | 840mV @ 20A | 10A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| SE20DG-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se20djm3i-datasheets-3136.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25μA | TO-263AC | 3 μs | Standard | 400V | 3.9A | 150A | 1 | 150pF @ 4V 1MHz | 400V | 25μA @ 400V | 1.2V @ 20A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| MBR2045EMFST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-mbr2045emfst1g-datasheets-6968.pdf | 8-PowerTDFN, 5 Leads | 5 | 6 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-F5 | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 45V | 400A | Schottky | 45V | 20A | 1 | 400μA @ 45V | 640mV @ 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| VIT2080S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vit2080sm34w-datasheets-3406.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | 80V | 150A | Schottky | 80V | 20A | 1 | 700μA @ 80V | 920mV @ 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SFF2004G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sff2005gc0g-datasheets-6844.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 90pF @ 4V 1MHz | 200V | 10μA @ 200V | 975mV @ 10A | 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AR4PMHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pmhm3ai-datasheets-3408.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 65A | TO-277A | 120 ns | Avalanche | 1kV | 1.8A | 1 | 55pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.9V @ 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| AS4PMHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 4A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 100A | TO-277A | 1.8 μs | Avalanche | 1kV | 2.4A | 1 | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.1V @ 4A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| VF20120S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vf20120sm34w-datasheets-3358.pdf | TO-220-3 Isolated Tab | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | 20A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300μA | 120V | 200A | TO-220AB | Schottky | 120V | 20A | 1 | 300μA @ 120V | 1.12V @ 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| UGS5JHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugs5jhmng-datasheets-3360.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 600V | 20μA @ 600V | 2V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT1045BP-M3/8W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vbt1045bpm38w-datasheets-3362.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 45V | 10A | 100A | 1 | 500μA @ 45V | 680mV @ 10A | 10A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SD125SC150B.T2 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 500pF @ 5V 1MHz | 150V | 500μA @ 150V | 890mV @ 15A | 15A | -55°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE20DD-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-se20djm3i-datasheets-3136.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 25μA | TO-263AC | 3 μs | Standard | 200V | 3.9A | 150A | 1 | 150pF @ 4V 1MHz | 200V | 25μA @ 200V | 1.2V @ 20A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| MBRB760-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-mbr745e345-datasheets-0093.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | 2 | 22 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | MBRB760 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 7.5A | 750mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 500μA | 60V | 150A | Schottky | 60V | 7.5A | 1 | 500μA @ 60V | 750mV @ 7.5A | -65°C~150°C |
