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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| S3AB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s3jbhr5g-datasheets-3481.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 40pF @ 4V 1MHz | 50V | 10μA @ 50V | 1.15V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5404G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-1n5408ga0g-datasheets-3444.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Standard Recovery >500ns, > 200mA (Io) | Standard | 25pF @ 4V 1MHz | 400V | 5μA @ 400V | 1V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3JB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s3jbhr5g-datasheets-3481.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 40pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.15V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES15GLWHRVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SOD-123W | 10 Weeks | SOD-123W | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 21pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.3V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT15GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5400G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-1n5408ga0g-datasheets-3444.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50V | 5μA | Standard | 125A | 1 | 3A | 25pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.1V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| RGL41A-E3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | RGL41A | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 150 ns | 150 ns | Standard | 50V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 50V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| GP10BE-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 12 Weeks | 2 | No | GP10B | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 100V | 30A | 100V | 3 μs | 3 μs | Standard | 100V | 1A | 8pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VSSAF3M6-M3/H | Vishay Semiconductor Diodes Division | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS®, SlimSMA™ | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vssaf3m6hm3i-datasheets-7824.pdf | DO-221AC, SMA Flat Leads | 2 | 11 Weeks | FREE WHEELING DIODE, LOW POWER LOSS | unknown | YES | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 300μA | Schottky | 80A | 1 | 2.5A | 500pF @ 4V 1MHz | 60V | 300μA @ 60V | 620mV @ 3A | 3A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| ACGRAT104-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/comchiptechnology-acgrat103hf-datasheets-9860.pdf | 2-SMD, No Lead | 2 | 12 Weeks | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-N2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Standard | 800V | 1A | 1A | 8pF @ 4V 1MHz | 800V | 5μA @ 800V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ES2LJ M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es2ldr5g-datasheets-7225.pdf | DO-214AA, SMB | 20 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3MB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s3jbhr5g-datasheets-3481.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 40pF @ 4V 1MHz | 10μA @ 1000V | 1.15V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ACGRAT105-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/comchiptechnology-acgrat103hf-datasheets-9860.pdf | 2010 (5025 Metric) | 2 | 12 Weeks | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-N2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Standard | 1kV | 1A | 1A | 8pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| ES2LG M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es2ldr5g-datasheets-7225.pdf | DO-214AA, SMB | 20 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S2G-E3/1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s2me35bt-datasheets-9163.pdf | 400V | 1.5A | DO-214AA, SMB | 30pF | Lead Free | 21 Weeks | Standard | S2G | DO-214AA (SMB) | 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2 μs | Standard | 400V | 1.5A | 16pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.15V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF27G B0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf28ga0g-datasheets-8273.pdf | DO-204AC, DO-15, Axial | 10 Weeks | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 20pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP10-4003E-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | GP10-4003 | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 1A | 200V | 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3GB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s3jbhr5g-datasheets-3481.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | 1.5μs | Standard | 40pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.15V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES15GLWHRQG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | SOD-123W | 2 | 10 Weeks | LOW POWER LOSS | compliant | YES | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 1μA | 35ns | Standard | 40A | 1 | 1.5A | 21pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.3V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GP10GE-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | Lead Free | 2 | 12 Weeks | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | WIRE | GP10G | Single | 1 | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| GP10DE-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | AEC-Q101 | WIRE | 260 | GP10D | Single | 30 | 1 | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 3 μs | 3 μs | Standard | 200V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| EGP10C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-egp10d-datasheets-0567.pdf | 150V | 1A | DO-204AL, DO-41, Axial | 22pF | Lead Free | 2 | 10 Weeks | 245mg | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | EGP10C | Single | 2.5W | 1 | Rectifier Diodes | 1A | 1A | 950mV | 30A | ISOLATED | 50 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 5μA | 150V | 30A | 150V | 50 ns | 50 ns | Standard | 150V | 1A | 5μA @ 150V | 950mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||
| GP15J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | Lead Free | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15J | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 1.1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 3.5 μs | 3.5 μs | Standard | 600V | 1.5A | 1 | 5μA @ 600V | 1.1V @ 1.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| SFT18GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS2FL3HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss2fl3m3h-datasheets-1834.pdf | DO-219AB | 2 | 13 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | Schottky | 30V | 2A | 50A | 1 | 2A | 145pF @ 4V 1MHz | 30V | 200μA @ 30V | 540mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| SFT18GHA1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT16GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP10D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10D | 2 | Single | 1 | Rectifier Diodes | 950mV | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 50 ns | 50 ns | Standard | 200V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| SB250-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb240e354-datasheets-0894.pdf | DO-204AL, DO-41, Axial | 2 | 10 Weeks | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | 2 | 150°C | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | DO-204AC | Schottky | 50V | 2A | 60A | 1 | 2A | 50V | 500μA @ 50V | 680mV @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| BYS11-90-M3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bys1190m3tr-datasheets-3052.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 90V | 1.5A | 40A | 1 | 90V | 100μA @ 90V | 750mV @ 1A | -55°C~150°C |
