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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GP15J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | Lead Free | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15J | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 1.1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 3.5 μs | 3.5 μs | Standard | 600V | 1.5A | 1 | 5μA @ 600V | 1.1V @ 1.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| SFT18GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS2FL3HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ss2fl3m3h-datasheets-1834.pdf | DO-219AB | 2 | 13 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | Schottky | 30V | 2A | 50A | 1 | 2A | 145pF @ 4V 1MHz | 30V | 200μA @ 30V | 540mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| SFT18GHA1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT16GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP10D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10D | 2 | Single | 1 | Rectifier Diodes | 950mV | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 50 ns | 50 ns | Standard | 200V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| SFT16GHA1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBA140LR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-cdba160lrhf-datasheets-7077.pdf | DO-214AC, SMA | 2 | 12 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | DUAL | C BEND | 260 | CDBA140 | 150°C | 30 | 1 | Rectifier Diodes | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 1A | 50A | 1A | 120pF @ 4V 1MHz | 500μA @ 40V | 450mV @ 1A | 1A DC | -50°C~100°C | ||||||||||||||||||||||||||||||||||||||||||||
| ES1DAF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-es1jaf-datasheets-9358.pdf | DO-214AD, SMAF | 2 | 17 Weeks | 330mg | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | FLAT | 260 | Single | NOT SPECIFIED | 1 | R-PDSO-F2 | 1A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 200V | 1μA | 34 ns | Standard | 200V | 1A | 1 | 1A | 15pF @ 4V 1MHz | 1μA @ 200V | 950mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| SFT17GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS210LHRUG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UH1PD-M3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-uh1pcm385a-datasheets-6822.pdf | DO-220AA | 2 | 21 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 30A | 40 ns | Standard | 200V | 1A | 1A | 16pF @ 4V 1MHz | 1μA @ 200V | 1.05V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| S5GB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s5kbhr5g-datasheets-0405.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | Standard | 40pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.1V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| U1B-E3/61T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-u1de361t-datasheets-7723.pdf | DO-214AC, SMA | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 100A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 24 ns | 15 ns | Standard | 100V | 1A | 1A | 5μA @ 100V | 920mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| EGP10A-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 22 Weeks | 2 | No | EGP10A | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 50V | 30A | 50V | 50 ns | 50 ns | Standard | 50V | 1A | 22pF @ 4V 1MHz | 50V | 5μA @ 50V | 950mV @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| CDBMTS240-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbmts2100hf-datasheets-9717.pdf | SOD-123S | 10 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 2A | 50A | 2A | 160pF @ 4V 1MHz | 500μA @ 40V | 500mV @ 2A | 2A DC | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP10F-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10F | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 30A | 300V | 50 ns | 50 ns | Standard | 300V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| SFT17GHA1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 500V | 5μA @ 500V | 1.7V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S2KHE3_A/I | Vishay Semiconductor Diodes Division | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s2jhe3ah-datasheets-0620.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 800V | 1.5A | 50A | 1 | 16pF @ 4V 1MHz | 800V | 1μA @ 800V | 1.15V @ 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| SFT15GHA0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE30PAJHM3/I | Vishay Semiconductor Diodes Division | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se20pajm3i-datasheets-3054.pdf | DO-221BC, SMA Flat Leads Exposed Pad | 2 | 10 Weeks | LOW LEAKAGE CURRENT | unknown | AEC-Q101 | YES | DUAL | 175°C | 1 | R-PDSO-F2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 600V | 5μA | 1.3μs | Standard | 32A | 1 | 1.4A | 13pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.16V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| SFT16GHR0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP10B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-egp10d-datasheets-0567.pdf | 100V | 1A | DO-204AL, DO-41, Axial | 22pF | Lead Free | 2 | 10 Weeks | 245mg | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | EGP10B | Single | 2.5W | 1 | Rectifier Diodes | 1A | 1A | 950mV | 30A | ISOLATED | 50 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 5μA | 100V | 30A | 100V | 50 ns | 50 ns | Standard | 100V | 1A | 5μA @ 100V | 950mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||
| SFT15GHA1G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sft12ga1g-datasheets-5632.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.3V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSSA310S-M3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vssa310se35at-datasheets-7049.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 100V | 1.7A | 60A | 1 | 3A | 175pF @ 4V 1MHz | 100V | 150μA @ 100V | 800mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| UH1PB-M3/84A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-uh1pcm385a-datasheets-6822.pdf | DO-220AA | 2 | 16 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 100V | 30A | 40 ns | Standard | 100V | 2.5A | 1A | 16pF @ 4V 1MHz | 5μA @ 100V | 1.05V @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| CDBMTS2100-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbmts2100hf-datasheets-9717.pdf | SOD-123S | 10 Weeks | EAR99 | 8541.10.00.80 | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 2A | 50A | 2A | 160pF @ 4V 1MHz | 500μA @ 100V | 850mV @ 2A | 2A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4384GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-1n4385gpe354-datasheets-2697.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N4384 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| CDBMTS1100-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbmts140hf-datasheets-0435.pdf | SOD-123S | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-F2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 100V | 1A | 30A | 1A | 120pF @ 4V 1MHz | 500μA @ 100V | 850mV @ 1A | 1A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| EGP10B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10B | 2 | Single | 1 | Rectifier Diodes | 950mV | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 50 ns | 50 ns | Standard | 100V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 1A | -65°C~150°C |
