Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ES1BLHRUG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es1dlrvg-datasheets-8322.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
ES2BA M2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es2jar3g-datasheets-7790.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 25pF @ 4V 1MHz | 100V | 10μA @ 100V | 950mV @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
HER207G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her208ga0g-datasheets-9932.pdf | DO-204AC, DO-15, Axial | 10 Weeks | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Standard | 20pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.7V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-2EMH02-M3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs2emh02m35at-datasheets-9497.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 25 ns | Standard | 200V | 2A | 50A | 1 | 2A | 200V | 2μA @ 200V | 950mV @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||
SBR3U60P1Q-13 | Diodes Incorporated | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr3u60p1q7-datasheets-0564.pdf | POWERDI®123 | 2 | 15 Weeks | EAR99 | HIGH RELIABILITY, LOW LEAKAGE CURRENT | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | CATHODE | SUPER FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Super Barrier | 60V | 3A | 80A | 1 | 3A | 60V | 100μA @ 60V | 620mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||||
GP15B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | 3.6mm | DO-204AC, DO-15, Axial | 7.6mm | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15B | 2 | Single | 1 | Rectifier Diodes | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | 100V | 3.5 μs | 3.5 μs | Standard | 100V | 1.5A | 1 | 5μA @ 100V | 1.1V @ 1.5A | -65°C~175°C | |||||||||||||||||||||||
1N5395GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N5395 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 2 μs | 2 μs | Standard | 400V | 1.5A | 1 | 15pF @ 4V 1MHz | 5μA @ 400V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||||||||
SS56BF-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-ss54bfhf-datasheets-9343.pdf | DO-221AA, SMB Flat Leads | 1 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 500pF @ 4V 1MHz | 60V | 1mA @ 60V | 700mV @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5397GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N5397 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 2 μs | 2 μs | Standard | 600V | 1.5A | 1 | 15pF @ 4V 1MHz | 5μA @ 600V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||||||||
1N4586GP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-1n4385gpe354-datasheets-2697.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N4586 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 50A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||||
VS-20MQ100HM3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20mq100hm35at-datasheets-9478.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 40V | 2A | 120A | 1 | 38pF @ 10V 1MHz | 40V | 500μA @ 40V | 690mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||
1N5397GP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N5397 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 2 μs | 2 μs | Standard | 600V | 1.5A | 1 | 15pF @ 4V 1MHz | 5μA @ 600V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||||||||
VS-2EMH01-M3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs2emh01m35at-datasheets-9481.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 25 ns | Standard | 100V | 2A | 50A | 1 | 2A | 100V | 2μA @ 100V | 950mV @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||
S5JB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s5kbhr5g-datasheets-0405.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | Standard | 40pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.1V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
S5KB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s5kbhr5g-datasheets-0405.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | Standard | 40pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.1V @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
RS2G-M3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs2jm35bt-datasheets-0970.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150 ns | Standard | 50V | 1.5A | 50A | 1 | 20pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.3V @ 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
V3FM15HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v3fm15hm3h-datasheets-3197.pdf | DO-219AB | 13 Weeks | DO-219AB (SMF) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150pF @ 4V 1MHz | 150V | 85μA @ 150V | 1.24V @ 3A | 3A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYG10J-E3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg10ye3tr-datasheets-7061.pdf | DO-214AC, SMA | Lead Free | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | BYG10J | 2 | Single | 30 | 1 | Rectifier Diodes | Not Qualified | 1.5A | 1.15V | 30A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 30A | 600V | 4 μs | 4 μs | Avalanche | 600V | 1.5A | 1 | 1μA @ 600V | 1.15V @ 1.5A | -55°C~150°C | |||||||||||||||||||||
ES2CA M2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es2jar3g-datasheets-7790.pdf | DO-214AC, SMA | 2 | 10 Weeks | EAR99 | 8541.10.00.80 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 10μA | 35ns | Standard | 50A | 1 | 2A | 25pF @ 4V 1MHz | 150V | 10μA @ 150V | 950mV @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
1N5391GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N5391 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 50A | 50V | 2 μs | 2 μs | Standard | 50V | 1.5A | 1 | 15pF @ 4V 1MHz | 5μA @ 50V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||||||||
RGP15K-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp15be354-datasheets-2575.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP15K | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 50A | 800V | 500 ns | 150 ns | Standard | 800V | 1.5A | 1 | 5μA @ 800V | 1.3V @ 1.5A | -65°C~175°C | ||||||||||||||||||||||||||
V3PM6HM3/I | Vishay Semiconductor Diodes Division | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v3pm6m3h-datasheets-1454.pdf | DO-220AA | 10 Weeks | DO-220AA (SMP) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 4V 1MHz | 60V | 200μA @ 60V | 500mV @ 1.5A | 2.4A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
GP15B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | 100V | 3.5 μs | 3.5 μs | Standard | 100V | 1.5A | 1 | 5μA @ 100V | 1.1V @ 1.5A | -65°C~175°C | ||||||||||||||||||||||||||
RSFAL RQG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-rsfjlr3g-datasheets-8615.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 4pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.3V @ 500mA | 500mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSL14HM2G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ssl12m2g-datasheets-0010.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 200μA @ 40V | 390mV @ 1A | 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
GP15D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15D | 2 | Single | 1 | Rectifier Diodes | 1.1V | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 3.5 μs | 3.5 μs | Standard | 200V | 1.5A | 1 | 5μA @ 200V | 1.1V @ 1.5A | -65°C~175°C | |||||||||||||||||||||||||
RGP15B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-rgp15be354-datasheets-2575.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP15B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 50A | 100V | 150 ns | 150 ns | Standard | 100V | 1.5A | 1 | 5μA @ 100V | 1.3V @ 1.5A | -65°C~175°C | ||||||||||||||||||||||||||
RS2A-M3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rs2jm35bt-datasheets-0970.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150 ns | Standard | 50V | 1.5A | 50A | 1 | 20pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.3V @ 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||
1N4586GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-1n4385gpe354-datasheets-2697.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N4586 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 50A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||||
GP15A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 50A | 50V | 3.5 μs | 3.5 μs | Standard | 50V | 1.5A | 1 | 5μA @ 50V | 1.1V @ 1.5A | -65°C~175°C |
Please send RFQ , we will respond immediately.