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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UG1A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug1be354-datasheets-8266.pdf | DO-204AL, DO-41, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1A | 40A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 40A | 50V | 25 ns | 35 ns | Standard | 50V | 1A | 1A | 5μA @ 50V | 950mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| BY206GP-E3/73 | Vishay Semiconductor Diodes Division | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | DO-204AL, DO-41, Axial | 22 Weeks | BY206GP | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 1 μs | Standard | 300V | 400mA | 300V | 2μA @ 300V | 1.5V @ 2A | 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES1CLHR3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es1dlrvg-datasheets-8322.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 150V | 5μA @ 150V | 950mV @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S2AHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s2jhe3ah-datasheets-0620.pdf | DO-214AA, SMB | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 50V | 1.5A | 50A | 1 | 16pF @ 4V 1MHz | 50V | 1μA @ 50V | 1.15V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| GL41Y/1 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 175°C | -65°C | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | 1.6kV | 1A | DO-213AB, MELF (Glass) | 8pF | Contains Lead | 6 Weeks | Standard | GL41Y | Single | DO-213AB | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 10μA | 1.6kV | Standard | 1.6kV | 1A | 8pF @ 4V 1MHz | 1600V | 10μA @ 1600V | 1.2V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| SS215LHR3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 950mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UG1C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug1be354-datasheets-8266.pdf | DO-204AL, DO-41, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1A | 40A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 40A | 150V | 25 ns | 35 ns | Standard | 150V | 1A | 1A | 5μA @ 150V | 950mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| MBR2150VGTR-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr2150vgtre1-datasheets-9550.pdf | DO-204AC, DO-15, Axial | 5 Weeks | DO-15 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 2A | 150V | 100μA @ 150V | 850mV @ 2A | 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SRT115 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-srt12r0g-datasheets-4276.pdf | T-18, Axial | 10 Weeks | TS-1 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 100μA @ 150V | 900mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1EMH02-M3/5AT | Vishay Semiconductor Diodes Division | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1emh02m35at-datasheets-9554.pdf | DO-214AC, SMA | 11 Weeks | SMA (DO-214AC) | Fast Recovery =< 500ns, > 200mA (Io) | 15.2 ns | Standard | 200V | 1A | 200V | 2μA @ 200V | 900mV @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE30PABHM3/I | Vishay Semiconductor Diodes Division | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishay-se30pajm3i-datasheets-2428.pdf | DO-221BC, SMA Flat Leads Exposed Pad | 2 | 10 Weeks | LOW LEAKAGE CURRENT | unknown | AEC-Q101 | YES | DUAL | 175°C | 1 | R-PDSO-F2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100V | 5μA | 1.3μs | Standard | 32A | 1 | 1.4A | 13pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.16V @ 3A | 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| SL02-M-18 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sl02m08-datasheets-7133.pdf | DO-219AB | 2 | 11 Weeks | yes | EAR99 | LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | SL02 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | R-PDSO-F2 | 1.1A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 20V | 40A | 10 ns | Schottky | 20V | 1.1A | 1 | 250μA @ 20V | 420mV @ 1.1A | 125°C Max | |||||||||||||||||||||||||||||||
| SS29LHR3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 100μA @ 90V | 850mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BA158GP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ba159gpe373-datasheets-2400.pdf | DO-204AL, DO-41, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | BA158GP | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 20A | 600V | 250 ns | 250 ns | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 600V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||
| SE30PAD-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se30pajm3i-datasheets-6345.pdf | DO-221BC, SMA Flat Leads Exposed Pad | 2 | 10 Weeks | LOW LEAKAGE CURRENT | unknown | YES | DUAL | 175°C | 1 | R-PDSO-F2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 5μA | 1.3μs | Standard | 32A | 1 | 1.4A | 13pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.16V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| SE30PADHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishay-se30pajm3i-datasheets-2428.pdf | DO-221BC, SMA Flat Leads Exposed Pad | 2 | 10 Weeks | LOW LEAKAGE CURRENT | unknown | AEC-Q101 | YES | DUAL | 175°C | 1 | R-PDSO-F2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200V | 5μA | 1.3μs | Standard | 32A | 1 | 1.4A | 13pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.16V @ 3A | 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-2EMH02-M3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs2emh02m35at-datasheets-9497.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | HYPERFAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 25 ns | Standard | 200V | 2A | 50A | 1 | 2A | 200V | 2μA @ 200V | 950mV @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| SBR3U60P1Q-13 | Diodes Incorporated | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr3u60p1q7-datasheets-0564.pdf | POWERDI®123 | 2 | 15 Weeks | EAR99 | HIGH RELIABILITY, LOW LEAKAGE CURRENT | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | CATHODE | SUPER FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Super Barrier | 60V | 3A | 80A | 1 | 3A | 60V | 100μA @ 60V | 620mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| HER206G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her208ga0g-datasheets-9932.pdf | DO-204AC, DO-15, Axial | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 5μA | 75ns | Standard | 60A | 1 | 2A | 20pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.7V @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| GL41K-E3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | DO-213AB, MELF (Glass) | Lead Free | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | GL41K | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.2V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 30A | 800V | Standard | 800V | 1A | 1A | 8pF @ 4V 1MHz | 10μA @ 800V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||
| RS1BL RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-rs1klrvg-datasheets-8026.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | Standard | 10pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.3V @ 800mA | 800mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1EMH01-M3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1emh01m35at-datasheets-9502.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15.2 ns | Standard | 100V | 1A | 1A | 100V | 2μA @ 100V | 900mV @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| CDBER70 | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/comchiptechnology-cdber70-datasheets-9504.pdf | 0503 (1308 Metric) | 8 Weeks | EAR99 | 150mW | 100mA | 100nA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 5 ns | Schottky | 70V | 70mA | 2pF @ 0V 1MHz | 100nA @ 50V | 1V @ 15mA | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GL41T-E3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount, Through Hole | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | GL41T | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 1.2V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1.3kV | 30A | 1.3kV | 750 ns | Standard | 1.3kV | 1A | 1A | 8pF @ 4V 1MHz | 1300V | 10μA @ 1300V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||
| SS210LHR3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ss24lrvg-datasheets-9409.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5393GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | 1N5393 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 2 μs | 2 μs | Standard | 200V | 1.5A | 1 | 15pF @ 4V 1MHz | 5μA @ 200V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||||||||||||||
| UG1B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-ug1be354-datasheets-8266.pdf | DO-204AL, DO-41, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 1A | 950mV | 40A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 40A | 100V | 25 ns | 35 ns | Standard | 100V | 1A | 1A | 5μA @ 100V | 950mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| ES1ALHR3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es1dlrvg-datasheets-8322.pdf | DO-219AB | 10 Weeks | Sub SMA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 10pF @ 4V 1MHz | 50V | 5μA @ 50V | 950mV @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK22A R3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk26ar3g-datasheets-1618.pdf | DO-214AC, SMA | 20 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 500μA @ 20V | 500mV @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S5MB M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-s5kbhr5g-datasheets-0405.pdf | DO-214AA, SMB | 8 Weeks | DO-214AA (SMB) | Standard Recovery >500ns, > 200mA (Io) | Standard | 40pF @ 4V 1MHz | 10μA @ 1000V | 1.1V @ 5A | 5A | -55°C~150°C |
