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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Forward Voltage-Max | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| JANS1N5418 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 80A | 150 ns | Standard | 1 | 3A | 165pF @ 4V | 1μA @ 400V | 1.5V @ 9A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5822 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/620 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5822-datasheets-8479.pdf | B, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 3A | 700mV | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 40V | 150A | Schottky | 1 | 3A | 100μA @ 40V | 500mV @ 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6663 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/587 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6663-datasheets-8482.pdf | DO-204AH, DO-35, Axial | 2 | 12 Weeks | 2 | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/587 | WIRE | 2 | Single | 1 | Qualified | 500mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50nA | 600V | 5A | Standard | 50nA @ 600V | 1V @ 400mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5616 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||
| S30760 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-s30760-datasheets-1809.pdf | DO-203AB, DO-5, Stud | Contains Lead | 1 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | EXCELLENT RELIABILITY | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | O-MUPM-D1 | 85A | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 1.5kA | 1.1V | Standard | 600V | 85A | 1 | 25μA @ 600V | 85A DC | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N1204A | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/260 | Stud | Stud Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | DO-203AA, DO-4, Stud | 1 | 2 | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 12A | 1.2V | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 250A | Standard | 1 | 5μs | 5μA @ 400V | 2.3V @ 240A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| CMSH2-40M TR13 PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmsh260mtr13pbfree-datasheets-7474.pdf | DO-214AC, SMA | 14 Weeks | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 40V | Schottky | 50A | 2A | 150pF @ 4V 1MHz | 40V | 500μA @ 40V | 550mV @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR30J02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 125°C | 1 | O-MUPM-D1 | 30A | 300A | SINGLE | CATHODE | 0.46 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 600V | 600V | 200 ns | 250 ns | Standard | 600V | 30A | 1 | 25μA @ 50V | 1V @ 30A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CPD83V-1N4148-CT20 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tray | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/centralsemiconductorcorp-cpd83v1n4148ct20-datasheets-8458.pdf | Die | 10 Weeks | Die | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | Standard | 100V | 200mA | 4pF @ 0V 1MHz | 100V | 25nA @ 20V | 1V @ 10mA | 200mA DC | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4003 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-1n4005rl-datasheets-6265.pdf | DO-204AL, DO-41, Axial | 2 | yes | HIGH RELIABILITY | unknown | NO | WIRE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | COMMERCIAL | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3W | 200V | Standard | 1A | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.1V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR85GR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.4V | 1.369kA | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.369kA | 25μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 85A | 1 | 25μA @ 100V | 1.4V @ 85A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N6080 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/503 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 12A | 1.5V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 175A | 30 ns | Standard | 100V | 2A | 1 | 10μA @ 100V | 1.5V @ 37.7A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||||
| BAT54WH6327XTSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | SC-70, SOT-323 | PG-SOT323-3 | Small Signal =< 200mA (Io), Any Speed | 5ns | Schottky | 10pF @ 1V 1MHz | 30V | 2μA @ 25V | 800mV @ 100mA | 200mA DC | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTDF500U20G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 1999 | /files/microsemicorporation-aptdf500u20g-datasheets-8415.pdf&product=microsemicorporation-aptdf500u20g-5993395 | LP4 | 81mm | 26.5mm | 62mm | Lead Free | 4 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 4 | Common Cathode | 1 | Rectifier Diodes | 500A | 1kA | 1V | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5kA | 2.5mA | 200V | 5kA | 70 ns | Standard | 200V | 500A | 1 | 200V | 2.5mA @ 200V | 1.1V @ 500A | ||||||||||||||||||||||||||||||||||||||||
| HS18140 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-hs18140-datasheets-8423.pdf | HALF-PAK | 1 | 2 | EAR99 | No | 8541.10.00.80 | UPPER | UNSPECIFIED | 1 | Single | 1 | Rectifier Diodes | S-XUFM-X1 | 180A | 700mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4mA | 40V | 2.5kA | Schottky | 40V | 180A | 1 | 7500pF @ 5V 1MHz | 4mA @ 40V | 700mV @ 180A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5621US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | EAR99 | No | 8541.10.00.80 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 150 ns | Standard | 800V | 1A | 1A | 20pF @ 12V 1MHz | 500nA @ 800V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 183NQ100-1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | HALF-PAK | 6 Weeks | PRM1-1 (Half Pak Module) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 4150pF @ 5V 1MHz | 100V | 4.5mA @ 100V | 950mV @ 180A | 180A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS310AJTLL | ROHM Semiconductor | $4.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs310ajtll-datasheets-8282.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 75W | 650V | 50μA | 0ns | Silicon Carbide Schottky | 69A | 1 | 10A | 500pF @ 1V 1MHz | 650V | 50μA @ 650V | 1.5V @ 10A | 10A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5417US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5416us-datasheets-6131.pdf | E-MELF | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| JANS1N5615 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 2 | 40 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 200V | 1A | 1A | 45pF @ 12V 1MHz | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| JANS1N5617US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | 2 | 40 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 150 ns | Standard | 1A | 35pF @ 12V 1MHz | 500μA @ 400V | 1.6V @ 3A | 1A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SCS304AJTLL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-scs304ajtll-datasheets-8256.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 37W | 650V | 20μA | 0ns | Silicon Carbide Schottky | 22A | 1 | 4A | 200pF @ 1V 1MHz | 650V | 20μA @ 650V | 1.5V @ 4A | 4A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS306AJTLL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs306ajtll-datasheets-8244.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 50W | 650V | 30μA | 0ns | Silicon Carbide Schottky | 39A | 1 | 6A | 300pF @ 1V 1MHz | 650V | 30μA @ 650V | 1.5V @ 6A | 6A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC20H12G2Y-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stpsc20h12g2ytr-datasheets-8391.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | compliant | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | POWER | No Recovery Time > 500mA (Io) | 1200V | 120μA | 1200V | Silicon Carbide Schottky | 140A | 1 | 20A | 1650pF @ 0V 1MHz | 1200V | 120μA @ 1.2kV | 1.5V @ 20A | 20A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1206AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 1 | 6 Weeks | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | No | UPPER | SOLDER LUG | 1N1206AR | Single | 1 | O-MUPM-D1 | 12A | 1.1V | 240A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 240A | 600V | Standard, Reverse Polarity | 600V | 12A | 1 | 10μA @ 50V | 1.1V @ 12A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MC5616 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-mc5616-datasheets-8400.pdf | S, Axial | 2 | 2 | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | 570mA | 6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000V | 1μA | 3kV | 4A | 300 ns | Standard | 0.57A | 3000V | 1μA @ 3000V | 6V @ 100mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5420 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 250 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FR85JR02 | GeneSiC Semiconductor | $27.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.4V | 1.369kA | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.369kA | 25μA | 600V | 600V | 250 ns | 250 ns | Standard, Reverse Polarity | 600V | 85A | 1 | 25μA @ 100V | 1.4V @ 85A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
| STTH810GY-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stth810gytr-datasheets-7857.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 15 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW LEAKAGE CURRENT, SNUBBER DIODE | not_compliant | e3 | Matte Tin (Sn) - annealed | GULL WING | STTH810 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 20μA | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 60A | 85 ns | 47 ns | Standard | 1kV | 8A | 1 | 8A | 1000V | 5μA @ 1000V | 2V @ 8A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N6622 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | 600V | 2A | A, Axial | 10pF | Contains Lead | 2 | 17 Weeks | 2 | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 1N6622 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 2A | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | 45 ns | Standard | 600V | 1.2A | 1 | 500nA @ 600V | 1.4V @ 1.2A | -65°C~150°C |
