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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| JANTXV1N5420 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 250 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FR85JR02 | GeneSiC Semiconductor | $27.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.4V | 1.369kA | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.369kA | 25μA | 600V | 600V | 250 ns | 250 ns | Standard, Reverse Polarity | 600V | 85A | 1 | 25μA @ 100V | 1.4V @ 85A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| STTH810GY-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stth810gytr-datasheets-7857.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 15 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW LEAKAGE CURRENT, SNUBBER DIODE | not_compliant | e3 | Matte Tin (Sn) - annealed | GULL WING | STTH810 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 20μA | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 60A | 85 ns | 47 ns | Standard | 1kV | 8A | 1 | 8A | 1000V | 5μA @ 1000V | 2V @ 8A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6622 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | 600V | 2A | A, Axial | 10pF | Contains Lead | 2 | 17 Weeks | 2 | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 1N6622 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 2A | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | 45 ns | Standard | 600V | 1.2A | 1 | 500nA @ 600V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| S3480 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-s3480-datasheets-8357.pdf | DO-203AB, DO-5, Stud | 1 | 17 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | EXCELLENT RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD | NO | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | 200°C | NOT SPECIFIED | 1 | Not Qualified | O-MUPM-D1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800V | 40μA | Standard | 800A | 1 | 45A | 5μs | 800V | 10μA @ 800V | 1.15V @ 90A | 45A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||
| IDW40E65D1FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw40e65d1fksa1-datasheets-8315.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | Unknown | 3 | yes | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | 40A | 1.35V | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 179W | 320A | 650V | 320A | 40μA | 77 ns | Standard | 650V | 80A | 1 | 40μA @ 650V | 1.7V @ 40A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5616 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -55°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||
| LSM345J/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm345jtr13-datasheets-8241.pdf | DO-214AB, SMC | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | LSM345 | Single | DO-214AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA | 45V | 150A | Schottky | 45V | 3A | 45V | 1.5mA @ 45V | 520mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D16065D1 | Cree/Wolfspeed | $4.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | ROHS3 Compliant | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 95μA @ 650V | 1.8V @ 16A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LFUSCD10120A | Littelfuse Inc. | $42.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/littelfuseinc-lfuscd10120a-datasheets-8335.pdf | TO-220-2 | Lead Free | 2 | 17 Weeks | EAR99 | PD-CASE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 136W | 250μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1.2kV | 10A | 80A | 1 | 500pF @ 1V 1MHz | 1200V | 250μA @ 1200V | 1.7V @ 10A | 10A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5819-1 | Microsemi Corporation | $8.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | Contains Lead | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | DO-204AL (DO-41) | 1A | 800mV | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 40V | Schottky | 45V | 1A | 70pF @ 5V 1MHz | 45V | 100μA @ 45V | 600mV @ 1A | 1A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDP45E60XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/infineontechnologies-idp45e60xksa1-datasheets-8337.pdf | TO-220-2 | Lead Free | 2 | 8 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Halogen Free | 3 | Single | 1 | 71A | 2V | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 187W | 162A | 50μA | 600V | 162A | 140 ns | Standard | 600V | 71A | 1 | 50μA @ 600V | 2V @ 45A | 71A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| DHG30I600HA | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | /files/ixys-dhg30i600ha-datasheets-8342.pdf&product=ixys-dhg30i600ha-5993365 | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | 6.500007g | No SVHC | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | 180W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 30A | 2.36V | 200A | 5mA | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 50μA | 600V | 200A | 35 ns | 35 ns | Standard | 600V | 30A | 1 | 50μA @ 600V | 2.36V @ 30A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| JANTXV1N6622 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | DO-41 | 30 ns | Standard | 660V | 1.2A | 1 | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N4608 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1998 | /files/microsemicorporation-1n4607-datasheets-8296.pdf | DO-204AH, DO-35, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | TIN LEAD | WIRE | Single | 1 | 200mA | 1.1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100μA | 85V | 1A | 10 ns | Standard | 85V | 200mA | 100μA @ 50V | 1.1V @ 400mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6628 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 18 Weeks | 2 | no | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | 2 | Single | 1 | Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 660V | 75A | 30 ns | Standard | 660V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 660V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFR120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.2V | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.8kA | 9000μA | Standard, Reverse Polarity | 1.2kV | 85A | 1800A | 1 | 1200V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4248 | Microsemi Corporation | $9.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4248-datasheets-8351.pdf | E3 | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | AXIAL | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 25A | 5 μs | Standard | 800V | 1A | 1A | 1μA @ 800V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N1188R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1188R | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 595A | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 400V | Standard, Reverse Polarity | 400V | 35A | 1 | 10μA @ 50V | 1.2V @ 35A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N3889 | GeneSiC Semiconductor | $9.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AA, DO-4, Stud | 10 Weeks | 2 | PRODUCTION (Last Updated: 6 months ago) | 1N3889 | DO-4 | 12A | 90A | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 50V | 50V | 200 ns | 200 ns | Standard | 50V | 12A | 50V | 25μA @ 50V | 1.4V @ 12A | 12A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5616US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||
| STTH812G-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth812d-datasheets-0284.pdf | 1.2kV | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12pF | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 11 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 245 | STTH812 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 8A | 2V | 80A | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 8μA | 1.2kV | 80A | 1.2kV | 100 ns | 100 ns | Standard | 1.2kV | 8A | 1 | 1200V | 8μA @ 1200V | 2.2V @ 8A | 175°C Max | ||||||||||||||||||||||||||||||
| STPS20M120STN | STMicroelectronics | $4.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stps20m120sr-datasheets-7855.pdf | TO-220-3 | 3 | No SVHC | 3 | EAR99 | NOT SPECIFIED | STPS20 | Single | NOT SPECIFIED | 1 | 20A | 840mV | CATHODE | EFFICIENCY | 1.35 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 240A | 275μA | 120V | 240A | TO-220AB | Schottky | 120V | 20A | 1 | 275μA @ 120V | 840mV @ 20A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWS08STR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ews12sm3-datasheets-0406.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | No SVHC | 3 | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 3 | Single | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 1.1V | CATHODE | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 50μA | 800V | TO-252AA | Standard | 800V | 8A | 1 | 8A | 50μA @ 800V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| CSICD05-1200 TR13 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 240pF @ 1V 1MHz | 1200V | 190μA @ 1200V | 1.7V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS312AJTLL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-scs312ajtll-datasheets-8265.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 88W | 650V | 60μA | 0ns | Silicon Carbide Schottky | 81A | 1 | 12A | 600pF @ 1V 1MHz | 650V | 60μA @ 650V | 1.5V @ 12A | 12A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-10ETF12-M3 | Vishay Semiconductor Diodes Division | $2.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs10etf12m3-datasheets-8269.pdf | TO-220-2 | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | SINGLE | NOT APPLICABLE | 10ETF12 | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-220AC | 310 ns | Standard | 1.2kV | 10A | 140A | 1 | 1200V | 100μA @ 1200V | 1.33V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC606G-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc606d-datasheets-1076.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 9.35mm | 4.6mm | Lead Free | 2 | 14 Weeks | No SVHC | 3 | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STPSC6 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 6A | 1.7V | 27A | 75μA | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 75μA | 600V | 110A | 0ns | Silicon Carbide Schottky | 600V | 6A | 1 | 6A | 375pF @ 0V 1MHz | 75μA @ 600V | 1.7V @ 6A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||
| MBR40100WT | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MBR | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/littelfuseinc-mbr40100wt-datasheets-8278.pdf | TO-247-3 | 3 | 19 Weeks | EAR99 | FREE WHEELING DIODE | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | R-PSFM-T3 | 40A | COMMON CATHODE, 2 ELEMENTS | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | TO-247AD | Schottky | 100V | 20A | 1 | 400pF @ 5V 1MHz | 1mA @ 100V | 880mV @ 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-C4PU3006LHN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | Tube | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsc4pu3006lhn3-datasheets-8284.pdf | TO-247-3 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | Standard | 600V | 15μA @ 600V | 1.55V @ 15A | 15A | -55°C~175°C |
