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ContactMemory(55331)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | RoHS Status | Datasheet | Package / Case | Operating Supply Voltage | Factory Lead Time | Voltage - Supply | Base Part Number | Memory Size | Memory Type | Access Time | Programming Voltage | Clock Frequency | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT53D1536M32D6BE-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 48Gb 1.5G x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||
| MT53D1024M32D4DT-053 WT ES:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-VFBGA | 1.1V | 32Gb 1G x 32 | Volatile | 1866MHz | DRAM | ||||||||||||
| MT29F1T08EMHAFJ4-3R:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 2.5V~3.6V | 1Tb 128G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||
| MTFC64GAJAEDQ-AAT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-LBGA | 512Gb 64G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||
| MT53D768M32D4BD-053 WT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 24Gb 768M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||
| MT29VZZZ7D7DQKWL-062 W.97Y | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||
| MT53D4DFSB-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | Volatile | DRAM | ||||||||||||||||||
| MT29VZZZ7C7DQKWL-062 W ES.97Y | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||
| MT53D384M32D2DS-053 AAT ES:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||
| MT53D1024M32D4BD-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 32Gb 1G x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||
| MT53B512M64D4NW-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 32Gb 512M x 64 | Volatile | 1600MHz | DRAM | ||||||||||||||
| MT53D1024M32D4NQ-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-VFBGA | 1.1V | 32Gb 1G x 32 | Volatile | 1866MHz | DRAM | ||||||||||||
| MT53D1024M32D4NQ-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-VFBGA | 1.1V | 32Gb 1G x 32 | Volatile | 1600MHz | DRAM | ||||||||||||
| MT53B1024M64D8WF-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 64Gb 1G x 64 | Volatile | 1600MHz | DRAM | ||||||||||||||
| MT53D512M64D4NW-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 432-VFBGA | 1.1V | 32Gb 512M x 64 | Volatile | 1600MHz | DRAM | ||||||||||||
| MT53D512M64D4NW-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 432-VFBGA | 1.1V | 32Gb 512M x 64 | Volatile | 1866MHz | DRAM | ||||||||||||
| MT29F128G08AMEDBJ5-12:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 3.3V | 2.7V~3.6V | 128Gb 16G x 8 | Non-Volatile | 83MHz | FLASH | Parallel | ||||||||||||
| MT29F4G01ABAFD12-ITES:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 24-TBGA | 12 Weeks | 2.7V~3.6V | 4Gb 4G x 1 | Non-Volatile | FLASH | SPI | |||||||||||
| MT53D384M32D2DS-046 AUT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 2133MHz | DRAM | ||||||||||||
| MT53B768M32D4NQ-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-VFBGA | 1.1V | 24Gb 768M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||
| MT53D384M32D2DS-046 AIT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 2133MHz | DRAM | ||||||||||||
| MT53D8DAHR-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 366-WFBGA | 1.1V | Volatile | DRAM | |||||||||||||||
| MT53B512M64D4NZ-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 32Gb 512M x 64 | Volatile | 1600MHz | DRAM | ||||||||||||||
| MT53B384M32D2DS-062 AUT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||
| MT29F4G08ABAFAH4-AITES:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 63-VFBGA | 12 Weeks | 2.7V~3.6V | 4Gb 512M x 8 | Non-Volatile | FLASH | Parallel | |||||||||||
| MT53D512M64D4NW-046 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 432-VFBGA | 1.1V | 32Gb 512M x 64 | Volatile | 2133MHz | DRAM | ||||||||||||
| MT53B384M32D2DS-062 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||
| DS2501S-UNW-111B/T&R | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||
| MT53D512M32D2NP-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||
| X28HC256JI-90R5699 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-x28hc256j90-datasheets-1953.pdf | 32-LCC (J-Lead) | 4.5V~5.5V | X28HC256 | 256Kb 32K x 8 | Non-Volatile | 90ns | EEPROM | Parallel | 5ms |
