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ContactMemory(55331)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Number of Terminations | Factory Lead Time | Number of Ports | ECCN Code | Additional Feature | Number of Functions | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Supply Voltage | Terminal Pitch | Base Part Number | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Access Time | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Memory IC Type | Access Mode |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EMFA164A2PK-DV-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| MT53D4DANY-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||||
| MT29F64G08ABEBBH6-12:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/micron-mt29f64g08abebbh612b-datasheets-4119.pdf | 152-VBGA | 3.3V | 2.7V~3.6V | 152-VBGA (14x18) | 64Gb 8G x 8 | Non-Volatile | 83MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||
| MT53D384M32D2DS-053 AUT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT40A2G8FSE-083E:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 78-TFBGA | 1.14V~1.26V | 78-FBGA (9.5x13) | 16Gb 2G x 8 | Volatile | 1.2GHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||
| MTFC64GAPAKEA-WT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -25°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-WFBGA | 512Gb 64G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||
| MT52L256M64D2LZ-107 XT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | 216-WFBGA | 12mm | 12mm | 216 | 1 | EAR99 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.2V | BOTTOM | BALL | 1.2V | 0.4mm | 1.3V | 1.14V | S-PBGA-B216 | 16Gb 256M x 64 | Volatile | 933MHz | DRAM | 256MX64 | 64 | 17179869184 bit | SINGLE BANK PAGE BURST | |||||||||||||
| 93LC76C-I/S15K | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 1 (Unlimited) | EEPROM | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microchiptechnology-93aa76cims-datasheets-0470.pdf | Die | 2.5V~5.5V | 93LC76C | Die | 8Kb 1K x 8 512 x 16 | Non-Volatile | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||
| MT53D512M64D8HR-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 366-WFBGA | 1.1V | 32Gb 512M x 64 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53D384M32D2DS-053 WT ES:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53B384M32D2DS-062 AAT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||
| DS2501S-UNW-111B/T&R | Maxim Integrated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||
| MT53D512M32D2NP-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 1600MHz | DRAM | ||||||||||||||||||||||||||||||||||
| X28HC256JI-90R5699 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-x28hc256j90-datasheets-1953.pdf | 32-LCC (J-Lead) | 4.5V~5.5V | X28HC256 | 256Kb 32K x 8 | Non-Volatile | 90ns | EEPROM | Parallel | 5ms | |||||||||||||||||||||||||||||||
| MT53B384M32D2NP-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53D8DATZ-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | Volatile | DRAM | |||||||||||||||||||||||||||||||||||||||
| MT53D384M32D2DS-053 AAT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53D512M64D8TZ-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 32Gb 512M x 64 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||
| MT53D4DBNY-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||||
| MT46H1DAMA-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | MEMORY CIRCUIT | ||||||||||||||||||||||||||||||||||||||||||
| MT53D4DAWT-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||||
| SST26VF016B-104I/WF70S | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SST26 SQI® | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microchiptechnology-sst26vf016b104isn-datasheets-0966.pdf | Die | 2.7V~3.6V | SST26VF016B | 16Mb 2M x 8 | Non-Volatile | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | |||||||||||||||||||||||||||||||
| MT53D384M32D2DS-053 WT ES:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53D384M32D2DS-053 AIT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53B512M32D2NP-062 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 20 Weeks | 1.1V | 16Gb 512M x 32 | Volatile | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||
| MT53D512M32D2NP-053 WT:D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 16Gb 512M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53B512M64D8HR-053 WT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 32Gb 512M x 64 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||||
| MT29TZZZ5D6DKFRL-107 W.9A6 | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| MT53B128M32D1DS-053 AUT:A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 4Gb 128M x 32 | Volatile | 1866MHz | DRAM | ||||||||||||||||||||||||||||||||||
| MT53B384M32D2NP-062 XT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 1.1V | 12Gb 384M x 32 | Volatile | 1600MHz | DRAM |
