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ContactMemory(55331)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Number of Terminations | Factory Lead Time | Number of Ports | ECCN Code | Additional Feature | Number of Functions | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Supplier Device Package | Memory Size | Memory Type | Access Time | Clock Frequency | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Access Mode |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT29F1T208ECCBBJ4-37:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 2.7V~3.6V | 1.125Tb 144G x 8 | Non-Volatile | 267MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||
| MT29F1HT08EMHBBJ4-3RES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 12 Weeks | 2.5V~3.6V | 1.5Tb 192G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||
| MT28FW512ABA1HJS-0AAT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt28fw512aba1lpc0aattr-datasheets-7492.pdf | 56-TFSOP (0.724, 18.40mm Width) | 12 Weeks | 1.7V~3.6V | 56-TSOP | 512Mb 32M x 16 | Non-Volatile | 105ns | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||
| MT53B512M64D4PV-062 WT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 32Gb 512M x 64 | Volatile | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||
| EDFA164A2MA-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | SYNCHRONOUS | 1mm | ROHS3 Compliant | 2015 | FBGA | 11mm | 11mm | 253 | 1 | EAR99 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.95V | BOTTOM | 1.2V | 0.5mm | 1.3V | 1.14V | S-PBGA-B253 | 16Gb 256M x 64 | Volatile | 933MHz | DRAM | Parallel | 256MX64 | 64 | 17179869184 bit | DUAL BANK PAGE BURST | ||||||||||||
| MT29F128G08CECBBH1-10IT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-VBGA | 2.7V~3.6V | 100-VBGA (12x18) | 128Gb 16G x 8 | Non-Volatile | 100MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||
| EDB1332BDPA-1D-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb1316bdbh1daatfd-datasheets-0877.pdf | 168-WFBGA | 8 Weeks | EAR99 | 1.14V~1.95V | NOT SPECIFIED | NOT SPECIFIED | 1Gb 32M x 32 | Volatile | 533MHz | DRAM | Parallel | |||||||||||||||||||||||||||
| EDF8132A3PB-JD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 216-FBGA (12x12) | 8Gb 256M x 32 | Volatile | 933MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||
| MT29C2DBGM-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||
| EDF8164A3PD-GD-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR3 | ROHS3 Compliant | FBGA | 1.14V~1.95V | 8Gb 128M x 64 | Volatile | 800MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||
| MT53B2DANL-DC | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | FBGA | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||
| MT29C3DAMF-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||
| MT29F128G08AECBBH6-6:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2.7V~3.6V | 152-VBGA (14x18) | 128Gb 16G x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||||
| EDB4416BBBH-1DIT-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.75mm | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb4432bbbj1daatfrtr-datasheets-2650.pdf | 134-WFBGA | 11.5mm | 10mm | 134 | 1 | EAR99 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY | 1 | YES | 1.14V~1.95V | BOTTOM | 1.2V | 0.65mm | 1.3V | 1.14V | R-PBGA-B134 | 4Gb 256M x 16 | Volatile | 533MHz | DRAM | Parallel | 256MX16 | 16 | 4294967296 bit | SINGLE BANK PAGE BURST | ||||||||||
| MT29E1HT08EMHBBJ4-3ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 12 Weeks | 2.5V~3.6V | 1.5Tb 192G x 8 | Non-Volatile | FLASH | Parallel | ||||||||||||||||||||||||||||||||
| MT29C4G96MAZBBCJV-48 IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND, Mobile LPDRAM | ROHS3 Compliant | 168-VFBGA | 1.7V~1.95V | 4Gb 256M x 16 N 4Gb 128M x 32 LPDRAM | Non-Volatile | 208MHz | FLASH, RAM | Parallel | ||||||||||||||||||||||||||||||||
| MT29C4G48MAYBBAHK-48 AIT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND, Mobile LPDRAM | ROHS3 Compliant | 137-VFBGA | 11 Weeks | 1.7V~1.95V | 4Gb 512M x 8 N 2G 64M x 32 LPDRAM | Non-Volatile | 208MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||
| MT29C1G12MAAIYAMR-5 AIT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND, Mobile LPDRAM | ROHS3 Compliant | 130-VFBGA | 11 Weeks | 1.7V~1.95V | 1Gb 128M x 8 N 512M 16M x 32 LPDRAM | Non-Volatile | 200MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||
| MT29E512G08CKCBBH7-6:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2.7V~3.6V | 152-TBGA | 512Gb 64G x 8 | Non-Volatile | 167MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||
| MT29C3DBAN-DC TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||
| EDB1316BDBH-1DAUT-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb1316bdbh1daatfd-datasheets-0877.pdf | 134-VFBGA | 8 Weeks | 1.14V~1.95V | 134-VFBGA (10x11.5) | 1Gb 64M x 16 | Volatile | 533MHz | DRAM | Parallel | |||||||||||||||||||||||||||||
| MT29C1G12MAAJVAKC-5 IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
| MT29E2T08CUHBBM4-3ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 12 Weeks | 2.5V~3.6V | 2Tb 256G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||
| MT29E1T08CUCBBH8-6:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 2.7V~3.6V | 152-LBGA (14x18) | 1Tb 128G x 8 | Non-Volatile | 167MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||
| MT53B512M64D4PV-053 WT ES:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 32Gb 512M x 64 | Volatile | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||
| MT29E4T08EYHBBG9-3:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 12 Weeks | 2.5V~3.6V | 4Tb 512G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||
| MT29E3T08EUHBBM4-3ES:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 12 Weeks | 2.5V~3.6V | 3Tb 384G x 8 | Non-Volatile | 333MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||
| MT53B256M64D2NL-062 XT ES:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Bulk | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 16Gb 256M x 64 | Volatile | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||
| MT29F128G08CEEDBJ4-12:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 132-VBGA | 2.7V~3.6V | 132-VBGA (12x18) | 128Gb 16G x 8 | Non-Volatile | 83MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||
| MT53B256M64D2NL-062 XT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -30°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 1.1V | 16Gb 256M x 64 | Volatile | 1600MHz | DRAM |
