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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Thickness | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Memory Size | Memory Type | Frequency (Max) | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Organization | Memory Width | Memory Density | Alternate Memory Width | Standby Current-Max | Word Size | Serial Bus Type | Endurance | Data Retention Time-Min | Write Protection | Access Time (Max) | Sync/Async | I/O Type | Standby Voltage-Min |
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| 71V67703S80PFGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | 100MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v67703s80pfgi-datasheets-7331.pdf | TQFP | 20mm | 14mm | 3.3V | Lead Free | 100 | 8 Weeks | 3.465V | 3.135V | 100 | Parallel | 9 Mb | yes | 1.4mm | 1 | FLOW-THROUGH ARCHITECTURE | No | 1 | 230mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 0.65mm | 100 | INDUSTRIAL | 30 | SRAMs | 1.1MB | RAM, SDR, SRAM | 100MHz | 3-STATE | 8 ns | 18b | 256KX36 | 0.07A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||
| 7130LA20JG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7130la20jg-datasheets-7329.pdf | PLCC | 19mm | 19mm | 5V | Lead Free | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 8 kb | 3.63mm | 2 | No | 200mA | 1kB | RAM, SDR, SRAM | 20 ns | 20b | 8b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7006S25J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7006s25j-datasheets-7312.pdf | PLCC | 24mm | 24mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 68 | Parallel | 128 kb | 3.63mm | 2 | No | 265mA | 16kB | RAM, SDR, SRAM | 25 ns | 28b | 8b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V416L15BEGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 85°C | -40°C | CMOS | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v416l15begi8-datasheets-7301.pdf | TFBGA | 9mm | 9mm | 3.3V | Lead Free | 48 | 12 Weeks | 3.6V | 3V | 48 | Parallel | 4 Mb | yes | 1.2mm | 1 | No | 1 | 160mA | e1 | TIN SILVER COPPER | BOTTOM | BALL | 260 | 3.3V | 0.75mm | 48 | INDUSTRIAL | SRAMs | 512kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 15 ns | 18b | 16b | Asynchronous | COMMON | 3V | ||||||||||||||||||||||||||||||||||||
| 71V124SA12YG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 3.683mm | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v124sa12yg-datasheets-7294.pdf | 20.9mm | 10.2mm | 3.3V | Lead Free | 130mA | 32 | 7 Weeks | 3.6V | 3V | 32 | Parallel | 1 Mb | yes | 2.2mm | 1 | No | 1 | 130mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 32 | COMMERCIAL | SRAMs | 128kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 12 ns | 17b | 8b | Asynchronous | COMMON | 3V | ||||||||||||||||||||||||||||||||||||
| 7016L12JG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7016l12jg-datasheets-7287.pdf | PLCC | 24mm | 24mm | 5V | Lead Free | 68 | 7 Weeks | 5.5V | 4.5V | 68 | Parallel | 144 kb | yes | 3.63mm | 2 | EAR99 | No | 1 | 275mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 68 | COMMERCIAL | SRAMs | 5V | RAM, SRAM | 3-STATE | 12 ns | 14b | 16KX9 | 0.005A | 9b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||
| IDT71V25761SA200BQI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 85°C | -40°C | 200MHz | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v25761sa200bqi-datasheets-7268.pdf | 165 | Parallel | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7140LA25J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7140la25j8-datasheets-7243.pdf | PLCC | 19mm | 3.63mm | 19mm | 5V | Contains Lead | 110mA | 52 | 7 Weeks | 2.96261g | 5.5V | 4.5V | 52 | Parallel | 8 kb | no | 3.63mm | 2 | EAR99 | No | 1 | 170mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 1kB | RAM, SDR, SRAM | 3-STATE | 25 ns | 20b | 1KX8 | 0.0015A | 8b | Asynchronous | COMMON | 2V | ||||||||||||||||||||||||||||||
| MX25U12835FZNI-10G | Macronix |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 85°C | -40°C | CMOS | 104MHz | SYNCHRONOUS | 0.8mm | RoHS Compliant | 6mm | 5mm | Lead Free | 8 | SPI, Serial | CAN BE ORGANISED AS 128 MBIT X 1 | unknown | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 1.8V | 1.27mm | 8 | INDUSTRIAL | 2V | 1.65V | 40 | Flash Memories | 1.8V | 0.02mA | Not Qualified | R-PDSO-N8 | 16MB | FLASH, NOR | 1.8V | 32MX4 | 4 | 134217728 bit | 2 | 0.00002A | SPI | 100000 Write/Erase Cycles | 10 | HARDWARE/SOFTWARE | ||||||||||||||||||||||||||||||||||||
| IDT71V25761SA200BQ8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 70°C | 0°C | 200MHz | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v25761sa200bq8-datasheets-7193.pdf | 165 | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70V3379S6PRF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 83.3MHz | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v3379s6prf8-datasheets-7159.pdf | TQFP | 20mm | 14mm | 3.3V | Contains Lead | 128 | 7 Weeks | 3.45V | 3.15V | 128 | Parallel | 576 kb | no | 1.4mm | 2 | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | No | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 0.5mm | 128 | COMMERCIAL | SRAMs | RAM, SRAM | 3-STATE | 6 ns | 15b | 0.015A | 18b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||
| 71342LA20JG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71342la20jg-datasheets-7146.pdf | PLCC | 19mm | 19mm | 5V | Lead Free | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 32 kb | yes | 3.63mm | 2 | EAR99 | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | No | 1 | 240mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 20 ns | 24b | 4KX8 | 0.0015A | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||||
| 7164S70DB | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | 125°C | -55°C | CMOS | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7164s70db-datasheets-7147.pdf | CDIP | 37.2mm | 15.24mm | 5V | Contains Lead | 28 | 10 Weeks | 5.5V | 4.5V | 28 | Parallel | 64 kb | no | 1.65mm | 1 | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | THROUGH-HOLE | 240 | 5V | 2.54mm | 28 | MILITARY | SRAMs | 5V | MIL-STD-883 Class B | 8kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 70 ns | 13b | 8KX8 | 0.02A | COMMON | |||||||||||||||||||||||||||||||||||
| 70V3379S6BF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 3 (168 Hours) | 70°C | 0°C | CMOS | 83.3MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v3379s6bf-datasheets-7106.pdf | 15mm | 15mm | 3.3V | Contains Lead | 208 | 7 Weeks | 3.45V | 3.15V | 208 | Parallel | 576 kb | no | 1.4mm | 2 | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | No | 1 | 310mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 0.8mm | 208 | COMMERCIAL | 20 | SRAMs | 72kB | RAM, SDR, SRAM | 3-STATE | 6 ns | 15b | 0.015A | 18b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||
| 70V631S12BCI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 85°C | -40°C | CMOS | 1.7mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v631s12bci8-datasheets-7097.pdf | 17mm | 17mm | 3.3V | Contains Lead | 256 | 7 Weeks | 3.45V | 3.15V | 256 | Parallel | 4.5 Mb | no | 1.4mm | 2 | No | 1 | 515mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 1mm | 256 | INDUSTRIAL | SRAMs | RAM, SRAM | 3-STATE | 12 ns | 18b | 0.015A | 18b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||||
| 71321LA25PF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 1.6mm | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71321la25pf8-datasheets-7091.pdf | TQFP | 14mm | 14mm | 5V | Contains Lead | 64 | 7 Weeks | 5.5V | 4.5V | 64 | Parallel | 16 kb | no | 1.4mm | 2 | EAR99 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | No | 1 | 170mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 0.8mm | 64 | COMMERCIAL | 20 | SRAMs | 5V | 2kB | RAM, SDR, SRAM | 3-STATE | 25 ns | 22b | 0.0015A | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||
| IDT71V3577S75PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 117MHz | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v3577s75pf-datasheets-7080.pdf | TQFP | 20mm | 3.3V | 100 | 3.465V | 3.135V | 100 | Parallel | 4.5 Mb | 1 | FLOW-THROUGH ARCHITECTURE | not_compliant | 1 | 255mA | e0 | QUAD | GULL WING | 240 | 3.3V | 0.65mm | 100 | COMMERCIAL | 20 | SRAMs | Not Qualified | RAM, SRAM | 3-STATE | 7.5 ns | 17b | 36 | 0.03A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||
| IDT71V25761SA200BQ | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | 200MHz | SYNCHRONOUS | 1.2mm | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v25761sa200bq-datasheets-7075.pdf | 15mm | 13mm | 165 | 165 | Parallel | 3A991.B.2.A | PIPELINED ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | YES | BOTTOM | BALL | 225 | 3.3V | 1mm | 165 | COMMERCIAL | 3.465V | 3.135V | 20 | SRAMs | 2.53.3V | 0.36mA | Not Qualified | RAM, SRAM | 3-STATE | 128KX36 | 36 | 4718592 bit | 0.03A | 3.1 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||
| 71V65603S150BQG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 150MHz | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v65603s150bqg-datasheets-7014.pdf | 15mm | 13mm | 3.3V | Lead Free | 165 | 12 Weeks | 3.465V | 3.135V | 165 | Parallel | 9 Mb | yes | 1.2mm | 1 | BURST COUNTER | No | 1 | 325mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 165 | COMMERCIAL | 30 | SRAMs | 1.1MB | RAM, SDR, SRAM | 150MHz | 3-STATE | 6.7 ns | 18b | 256KX36 | 0.04A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||
| 70V3379S6BC | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 83.3MHz | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v3379s6bc-datasheets-7004.pdf | 17mm | 17mm | 3.3V | Contains Lead | 256 | 7 Weeks | 3.45V | 3.15V | 256 | Parallel | 576 kb | no | 1.4mm | 2 | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | No | 1 | 310mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 1mm | 256 | COMMERCIAL | SRAMs | RAM, SRAM | 3-STATE | 6 ns | 30b | 0.015A | 18b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||||
| IDT71V25761SA200BGI8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | Tape & Reel (TR) | 85°C | -40°C | 200MHz | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v25761sa200bgi8-datasheets-6949.pdf | BGA | Parallel | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7164L25YG | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 3.556mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7164l25yg-datasheets-6918.pdf | 17.9mm | 7.6mm | 5V | Lead Free | 28 | 7 Weeks | 5.5V | 4.5V | 28 | Parallel | 64 kb | yes | 2.67mm | 1 | EAR99 | No | 1 | 80mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 5V | 28 | COMMERCIAL | SRAMs | 5V | 8kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 25 ns | 13b | 8KX8 | 0.00006A | 8b | Asynchronous | COMMON | 2V | |||||||||||||||||||||||||||||||||
| 71V3558SA166BQGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 85°C | -40°C | CMOS | 166MHz | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v3558sa166bqgi-datasheets-6902.pdf | 15mm | 13mm | 3.3V | Lead Free | 165 | 11 Weeks | 165 | Parallel | 4.5 Mb | yes | 1.2mm | 1 | No | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 3.3V | 165 | INDUSTRIAL | 3.465V | 30 | SRAMs | 0.36mA | RAM, SRAM | 3-STATE | 18b | 0.045A | 3.5 ns | COMMON | ||||||||||||||||||||||||||||||||||||||||
| 71V256SA15YG8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 3.556mm | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-71v256sa15yg8-datasheets-6867.pdf | 17.9mm | 7.6mm | 3.3V | Lead Free | 85mA | 28 | 7 Weeks | 3.6V | 3V | 28 | Parallel | 256 kb | yes | 2.67mm | 1 | EAR99 | No | 1 | 85mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 28 | COMMERCIAL | SRAMs | 32kB | RAM, SDR, SRAM - Asynchronous | 3-STATE | 15 ns | 15b | 32KX8 | 0.002A | 8b | Asynchronous | COMMON | 3V | |||||||||||||||||||||||||||||||||
| IDT71V25761SA200BGI | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 85°C | -40°C | 200MHz | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71v25761sa200bgi-datasheets-6865.pdf | BGA | Parallel | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7007S55J8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7007s55j8-datasheets-6861.pdf | PLCC | 24mm | 24mm | 5V | Contains Lead | 68 | 7 Weeks | 5.5V | 4.5V | 68 | Parallel | 256 kb | no | 3.63mm | 2 | EAR99 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | No | 1 | 270mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 32kB | RAM, SDR, SRAM | 3-STATE | 55 ns | 30b | 0.015A | 8b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||
| IDT71T75902S75PF | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | 3 (168 Hours) | 70°C | 0°C | CMOS | SYNCHRONOUS | 1.6mm | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-idt71t75902s75pf-datasheets-6845.pdf | LQFP | 20mm | 14mm | 100 | Parallel | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | not_compliant | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | YES | QUAD | GULL WING | 240 | 2.5V | 0.65mm | 100 | COMMERCIAL | 2.625V | 2.375V | 20 | SRAMs | 2.5V | 0.275mA | Not Qualified | R-PQFP-G100 | RAM, SRAM | 3-STATE | 100MHz | 1MX18 | 18 | 18874368 bit | 0.04A | 7.5 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||
| 7143SA55J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 70°C | 0°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7143sa55j-datasheets-6842.pdf | PLCC | 24mm | 24mm | 5V | Contains Lead | 7 Weeks | 5.5V | 4.5V | 68 | Parallel | 32 kb | 3.63mm | 2 | No | 285mA | 4kB | RAM, SDR, SRAM | 55 ns | 22b | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7134SA25J | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 3 (168 Hours) | 70°C | 0°C | CMOS | 4.57mm | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-7134sa25j-datasheets-6829.pdf | PLCC | 19mm | 19mm | 5V | Contains Lead | 52 | 7 Weeks | 5.5V | 4.5V | 52 | Parallel | 32 kb | no | 3.63mm | 2 | EAR99 | AUTOMATIC POWER-DOWN | No | 1 | 280mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 4kB | RAM, SDR, SRAM | 3-STATE | 25 ns | 24b | 4KX8 | 0.015A | 8b | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||
| 70V3379S5PRF8 | Integrated Device Technology (IDT) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel | 3 (168 Hours) | 70°C | 0°C | CMOS | 100MHz | 1.6mm | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/integrateddevicetechnology-70v3379s5prf8-datasheets-6780.pdf | TQFP | 20mm | 14mm | 3.3V | Contains Lead | 128 | 7 Weeks | 3.45V | 3.15V | 128 | Parallel | 576 kb | no | 1.4mm | 2 | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | No | 1 | 360mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 0.5mm | 128 | COMMERCIAL | SRAMs | RAM, SRAM | 3-STATE | 5 ns | 30b | 0.015A | 18b | Synchronous | COMMON |
