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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Frequency | Current - Supply | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Polarity | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | RF Type | Operating Temperature (Max) | Operating Temperature (Min) | Construction | RF/Microwave Device Type | Input Power-Max (CW) | Characteristic Impedance | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Test Frequency | Input Capacitance | Noise Figure | P1dB | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Highest Frequency Band | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Channel Type | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Collector-Base Capacitance-Max | Noise Figure (dB Typ @ f) | Frequency - Transition | Power Supply Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMA041AA | Microsemi |
Min: 1 Mult: 1 |
download | Waffle | RoHS Compliant | /files/microsemi-mma041aa-datasheets-1325.pdf | 14 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75TL60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2011 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP3 | 16 | 36 Weeks | 32 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 4 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X16 | 4.62nF | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 600V | 100A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFT20005 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS Compliant | /files/microsemi-uft20270-datasheets-2751.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50SK170T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt50sk170t1g-datasheets-0503.pdf | SP1 | 51.6mm | 11.5mm | 40.8mm | 12 | 36 Weeks | 12 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 312W | UPPER | THROUGH-HOLE | 12 | 1 | Insulated Gate BIP Transistors | 4.4nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 312W | 1.7kV | 2V | 450 ns | 1.7kV | 75A | Standard | 1700V | 1100 ns | 2.4 V | 20V | 250μA | 2.4V @ 15V, 50A | Trench Field Stop | Yes | 4.4nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N1190 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpadatajan1n1190-datasheets-2479.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GT120JU2 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2004 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | ISOTOP | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 36 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, LOW CONDUCTION LOSS | 416W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 5.34nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 416W | 1.2kV | 1.7V | 335 ns | 1.2kV | 100A | Standard | 1200V | 610 ns | 2.1 V | 20V | 5mA | 2.1V @ 15V, 75A | Trench Field Stop | No | 5.34nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| S3840 | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | RoHS non-compliant | /files/microsemi-s3840-datasheets-2890.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ30H65T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq30h65t3g-datasheets-0876.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Full Bridge | 95W | Standard | 650V | 40A | 50μA | 2.3V @ 15V, 30A | Trench Field Stop | Yes | 1.9nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N6622US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n6621us-datasheets-1257.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 10A030 | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Stud Mount | 200°C TJ | Bulk | 1 (Unlimited) | 200°C | -65°C | RoHS Compliant | 1996 | /files/microsemicorporation-10a030-datasheets-6265.pdf | 55FT | 13 Weeks | 55 | IN PRODUCTION (Last Updated: 3 weeks ago) | Tin | NPN | 13W | 13W | 1 | 7.8dB ~ 8.5dB | 55FT | 13W | 24V | 24V | 1.5A | 24V | 1.5A | 3.5V | NPN | 20 @ 200mA 5V | 2.5GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5617US/TR | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N2857 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/343 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | 1.6GHz | Non-RoHS Compliant | 2007 | /files/microsemicorporation-jantx2n2857-datasheets-6474.pdf | TO-72-3 Metal Can | 4 | 23 Weeks | 4 | EAR99 | Lead, Tin | No | e0 | Tin/Lead (Sn/Pb) | 200mW | BOTTOM | WIRE | 200mW | 1 | Other Transistors | 12.5dB ~ 21dB @ 450MHz | Qualified | SILICON | SINGLE | NPN | 15V | 40mA | 30V | 3V | NPN | 30 @ 3mA 1V | 4.5dB @ 450MHz | 500MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5415 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5420-datasheets-7765.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TAN350 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 230°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2005 | /files/microsemicorporation-tan350-datasheets-6895.pdf | 55ST | 2 | 22 Weeks | 55 | no | EAR99 | No | 1.215GHz | e0 | TIN LEAD | 1.45kW | DUAL | FLAT | 2 | 1 | Other Transistors | 7dB ~ 7.5dB | R-CDFM-F2 | SILICON | SINGLE | AMPLIFIER | NPN | 1450W | L B | 65V | 65V | 40A | NPN | 10 @ 1A 5V | 960MHz~1.215GHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF90A60T3AG | Microsemi |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemi-aptgf90a60t3ag-datasheets-2154.pdf | 20 | Dual | N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF5812MR2 | Microsemi |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N1206AR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpbdatajantx1n1204a-datasheets-7518.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8372R2 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2004 | /files/microsemicorporation-mrf8372gr1-datasheets-6939.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | OBSOLETE (Last Updated: 1 month ago) | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 2.2W | DUAL | GULL WING | 8 | Other Transistors | 8dB ~ 9.5dB | Single | AMPLIFIER | NPN | ULTRA HIGH FREQUENCY B | 16V | 16V | 200mA | 30V | NPN | 30 @ 50mA 5V | 2.75pF | 870MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5807 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5811-datasheets-3001.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 61044 | Microsemi |
Min: 1 Mult: 1 |
download | Not Applicable | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5619/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 60168 | Microsemi |
Min: 1 Mult: 1 |
download | Not Applicable | RoHS Compliant | yes | compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5418E3 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS Compliant | /files/microsemi-grpbdatajantx1n5420-datasheets-7765.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMA015AA | Microsemi |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 0Hz~14GHz | 115mA | RoHS Compliant | 2016 | /files/microsemi-mma015aa-datasheets-6672.pdf | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | 1 | 85°C | -55°C | WIDE BAND LOW POWER | RF/Microwave Amplifiers | 4V | 15dB | 14GHz | 19dBm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 66068B | Microsemi |
Min: 1 Mult: 1 |
download | Not Applicable | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R4280 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-r42120-datasheets-7280.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMA025AA | Microsemi |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 0Hz~30GHz | Non-RoHS Compliant | 2014 | /files/microsemicorporation-mma025aa-datasheets-1306.pdf | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 5V | COMPONENT | WIDE BAND LOW POWER | 20dBm | 50Ohm | 18dB | 30GHz | 5.5dB | 17dBm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70061A | Microsemi |
Min: 1 Mult: 1 |
download | Not Applicable | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N4946 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n4944-datasheets-3350.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UATS30S1C | Microsemi |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 0Hz~20GHz 1.5GHz~30GHz | 85mA | RoHS Compliant | 8 Weeks | 4.5V | General Purpose | 11dB | 4.5dB | 14dBm |
