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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Applications | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Data Rate | Memory Size | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Speed Grade | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Organization | Number of Gates | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Core Processor | Connectivity | Number of Logic Elements/Cells | Number of Logic Blocks (LABs) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Number of Equivalent Gates | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| VSC3108XVP-01 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tray | 3 (168 Hours) | 110°C | 0°C | RoHS Compliant | 2003 | /files/microsemicorporation-vsc3108xvp01-datasheets-2417.pdf | 69-CBGA | 8mm | 8mm | 69 | 69 | 1 | Backplane, Cable Interconnect | BOTTOM | BALL | NOT SPECIFIED | 2.5V | 0.8mm | OTHER | 2.625V | 1 | CROSS POINT SWITCH | NOT SPECIFIED | Multiplexer or Switches | 2.5/3.3V | Not Qualified | Single | SEPARATE OUTPUT | 8:8 | 2.2V 3.3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-FGG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | Surface Mount | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 100MHz | 7mA | RoHS Compliant | 2013 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 484-BGA | 1.5V | Lead Free | 12 Weeks | 1.575V | 1.425V | 484 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | No | 100MHz | A2F200 | 484-FPBGA (23x23) | 400 kbps | 4.5kB | MCU - 41, FPGA - 94 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 80MHz | 200000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 2500 | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H45STG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm100h45stg-datasheets-3269.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 14 | 357W | 4 | 10 ns | 12ns | 35 ns | 121 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 72A | 2500 mJ | 4 N-Channel (H-Bridge) | 4350pF @ 25V | 540m Ω @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-VFG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20AM06SG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20am06sg-datasheets-9451.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 28 ns | 56ns | 99 ns | 81 ns | 300A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 18500pF @ 25V | 7.2m Ω @ 150A, 10V | 5V @ 6mA | 325nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120A15FG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm120a15fg-datasheets-9513.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 20 ns | 15ns | 45 ns | 160 ns | 60A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 1250W | 0.175Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 20600pF @ 25V | 175m Ω @ 30A, 10V | 5V @ 10mA | 748nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-FG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | Non-RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 23mm | 23mm | 484 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 267 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 267 | 166MHz | 267 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC170AM30CT1AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc170am30ct1ag-datasheets-9567.pdf | SP1 | 36 Weeks | 1 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 700W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 106A | 1700V 1.7kV | 2 N Channel (Phase Leg) | 6160pF @ 1000V | 30m Ω @ 100A, 20V | 2.3V @ 5mA (Typ) | 100A Tc | 380nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-VFG400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | RoHS Compliant | 2009 | /files/microsemicorporation-m2s050tfgg484-datasheets-1246.pdf | 400-LFBGA | 1.2V | 12 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | 400MHz | M2S050 | 400-VFBGA (17x17) | 667 Mbps | 256kB | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | 56340 | 4695 | FPGA - 50K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100DDA35T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP3 | 25 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 2 N-Channel (Dual) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-1VFG400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | RoHS Compliant | 2014 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 1.2V | Lead Free | 10 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025TS | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | 1 | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120DSK57T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm120dsk57t3g-datasheets-5082.pdf | SP3 | 25 | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 20 ns | 15ns | 45 ns | 160 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 68A | 0.648Ohm | 2 N-Channel (Dual) | 5155pF @ 25V | 684m Ω @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010-1FGG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | RoHS Compliant | 2009 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 8 Weeks | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S010 | 484-FPBGA (23x23) | 233 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 10K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DSK10T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP3 | 25 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 312W | UPPER | UNSPECIFIED | 25 | 312W | 2 | 15 ns | 21ns | 52 ns | 73 ns | 37A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 140A | 1600 mJ | 2 N-Channel (Dual) | 4367pF @ 25V | 120m Ω @ 18.5A, 10V | 5V @ 1mA | 96nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-1VFG400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 10 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025T | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100A46FT1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm100a46ft1g-datasheets-5431.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 357W | 2 | FET General Purpose Power | Not Qualified | 19A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 6800pF @ 25V | 552m Ω @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050TS-1FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100DSK35T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100dsk35t3g-datasheets-0429.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 2 N-Channel (Dual) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-PQ208I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 80MHz | 4.1mm | Non-RoHS Compliant | 2013 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | 28mm | 28mm | 208 | 12 Weeks | 208 | Ethernet, I2C, SPI, UART, USART | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | 225 | 1.5V | 0.5mm | A2F500M3G | 1.575V | 1.425V | 20 | Field Programmable Gate Arrays | 1.51.82.53.3V | Not Qualified | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 66 | 11520 CLBS, 500000 GATES | ARM® Cortex®-M3 | Ethernet, I2C, SPI, UART/USART | 24 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | 500000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM08TAM04PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm08tam04pg-datasheets-0473.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 138W | UPPER | UNSPECIFIED | 21 | 138W | 6 | R-XUFM-X21 | 35 ns | 60ns | 65 ns | 100 ns | 120A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 250A | 0.0045Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 4530pF @ 25V | 4.5m Ω @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F060M3E-1CS288I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 100MHz | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f060m3etq144-datasheets-5555.pdf | 288-TFBGA, CSPBGA | 99 Weeks | EBI/EMI, I2C, SPI, UART, USART | 100MHz | A2F060M3E | 288-CSP (11x11) | MCU - 28, FPGA - 68 | DMA, POR, WDT | ARM | 16KB | MCU, FPGA | 100MHz | ARM® Cortex®-M3 | EBI/EMI, I2C, SPI, UART/USART | 8 | ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20AM08FTG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20am08ftg-datasheets-0511.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 12 | 781W | 2 | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-PQG208I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 80MHz | RoHS Compliant | 2010 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | Lead Free | 12 Weeks | 208 | Ethernet, I2C, SPI, UART, USART | 100MHz | A2F500M3G | 208-PQFP (28x28) | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 80MHz | ARM® Cortex®-M3 | Ethernet, I2C, SPI, UART/USART | 24 | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120HRM40CT3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~150°C TJ | Bulk | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120hrm40ct3ag-datasheets-1941.pdf | Module | SP3 | 1200V 1.2kV | 375W | 2 N-Channel (Dual) | 2788pF @ 1000V | 34mOhm @ 50A, 20V | 3V @ 12.5mA | 73A Tc | 161nC @ 5V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S100T-1FC1152 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 166MHz | 2.9mm | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 1152-BBGA, FCBGA | 35mm | 35mm | CAN, Ethernet, I2C, SPI, UART, USART, USB | e0 | TIN LEAD | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | M2S100T | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B1152 | 574 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 574 | 574 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 100K Logic Modules | 99512 | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7334 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv2n7334-datasheets-5954.pdf | 14-DIP (0.300, 7.62mm) | 14 | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | MIL-19500/597 | 1.4W | DUAL | NOT SPECIFIED | 14 | NOT SPECIFIED | 4 | Qualified | R-CDIP-T14 | 1A | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W | MO-036AB | 1A | 4A | 0.8Ohm | 75 mJ | 4 N-Channel | 700m Ω @ 600mA, 10V | 4V @ 250μA | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S005-1TQ144 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.6mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 144-LQFP | 20mm | 20mm | 144 | OBSOLETE (Last Updated: 3 weeks ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PQFP-G144 | 84 | DDR | 64KB | MCU, FPGA | 84 | 166MHz | 84 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 5K Logic Modules | 6060 | 128KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT37M100L | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt37m100l-datasheets-4922.pdf | 1kV | 37A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 18 Weeks | 10.6g | 330mOhm | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | SINGLE | 3 | 1 | R-PSFM-T3 | 44 ns | 40ns | 38 ns | 150 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1135W Tc | 1kV | N-Channel | 9835pF @ 25V | 330m Ω @ 18A, 10V | 5V @ 2.5mA | 37A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-1FGG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 100MHz | 1.7mm | RoHS Compliant | 2013 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 17mm | 17mm | Lead Free | 256 | 256 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | 8542.39.00.01 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 250 | 1.5V | 1mm | A2F500M3G | 1.575V | 1.425V | 30 | Field Programmable Gate Arrays | 1.51.82.53.3V | Not Qualified | MCU - 25, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 66 | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 24 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB |
