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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Max Input Voltage | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Supply Voltage-Max (Vsup) | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Screening Level | Max Output Current | Min Input Voltage | RAM Size | Forward Current | Forward Voltage | Output Type | Max Surge Current | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Application | Continuous Collector Current | Number of Outputs | Quiescent Current | Speed | Power - Max | Output Voltage 1 | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Number of Registers | Reverse Voltage (DC) | Topology | Clock Frequency | Voltage - Output | Dropout Voltage1-Nom | Load Regulation-Max(%) | Line Regulation-Max (%/V) | Capacitance @ Vr, F | Adjustability | Voltage - DC Reverse (Vr) (Max) | Current - Output | Voltage Tolerance-Max | Output Current1-Max | Voltage - Collector Emitter Breakdown (Max) | Programmable Logic Type | Number of Equivalent Gates | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Output Current2-Max | Test Condition | Frequency - Switching | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Voltage Reference |
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| MSDM100-12 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/microsemicorporation-msdm10016-datasheets-9164.pdf | Module | Lead Free | 5 | 22 Weeks | 5 | No | UPPER | UNSPECIFIED | 5 | Single | 1 | 100A | 1.9V | ISOLATED | SILICON | 500μA | 1.2kV | 920A | Three Phase | 3 | 500μA @ 1200V | 1.9V @ 300A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-8778201YA | Microsemi |
Min: 1 Mult: 1 |
Through Hole | 125°C | -55°C | RoHS Compliant | TO-3 | No | 35V | Positive | 1.5 % | 3.3A | Fixed | 1 | 6mA | 5V | 3.3A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT06DC60HJ | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Silicon Carbide Schottky | RoHS Compliant | 2012 | /files/microsemicorporation-apt06dc60hj-datasheets-0836.pdf | SOT-227-4, miniBLOC | 4 | 4 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 6A | 1.8V | ISOLATED | 200μA | 600V | 210A | Single Phase | 1 | 6A | 200μA @ 600V | 1.8V @ 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG1526BL-883B | Microsemi |
Min: 1 Mult: 1 |
Surface Mount | Bulk | 150°C | -55°C | Non-RoHS Compliant | 20 | Yes | Push-Pull | 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60DS20HJ | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Schottky | RoHS Compliant | 2012 | /files/microsemicorporation-apt60ds20hj-datasheets-0910.pdf | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 90A | 900mV | ISOLATED | SILICON | 1mA | 200V | 600A | Single Phase | 1 | 1mA @ 200V | 900mV @ 60A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-8855301ZA | Microsemi |
Min: 1 Mult: 1 |
Through Hole | 125°C | -55°C | BIPOLAR | RoHS Compliant | TO-66 | 2 | 3 | EAR99 | 1 | 35V | e0 | TIN LEAD | Positive | BOTTOM | PIN/PEG | 2 | 1.5 % | Other Regulators | Qualified | O-MBFM-P2 | 3.3A | Fixed | 1 | 6mA | 15V | 15V | 2.5V | 0.075% | 0.05% | 3% | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D20BCAG | Microsemi |
Min: 1 Mult: 1 |
download | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt30d20bcag-datasheets-2548.pdf | 200V | 30A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 25 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | Common Anode | 2 | Rectifier Diodes | R-PSFM-T3 | 30A | 1.3V | 320A | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 200V | 320A | TO-247AD | 24 ns | 21 ns | Standard | 200V | 30A | 1 | 200V | 250μA @ 200V | 1.3V @ 30A | -55°C~175°C | 1 Pair Common Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VCC1-A3C-1M8432 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D120BCTG | Microsemi |
Min: 1 Mult: 1 |
download | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt30d120bctg-datasheets-9581.pdf | 1.2kV | 30A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 25 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | Common Cathode | 2 | Rectifier Diodes | R-PSFM-T3 | 30A | 2.5V | 210A | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 1.2kV | 210A | TO-247AD | 370 ns | 370 ns | Standard | 1.2kV | 30A | 1 | 1.2kV | 1200V | 250μA @ 1200V | 2.5V @ 30A | -55°C~175°C | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VCC6LAD66M000 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5809 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5809-datasheets-6009.pdf | B, Axial | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 30 ns | Standard | 100V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG140-05T/883B | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemi-sg14005t883b-datasheets-2307.pdf | 3 | OBSOLETE (Last Updated: 1 month ago) | no | EAR99 | Yes | not_compliant | 1 | 35V | e0 | Tin/Lead (Sn/Pb) | Positive | BOTTOM | WIRE | NOT SPECIFIED | 3 | 2 % | NOT SPECIFIED | Other Regulators | Not Qualified | O-MBCY-W3 | MIL-STD-883 Class B | Fixed | 1 | 6mA | 5V | 5V | 2V | 0.05% | 0.05% | 5% | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20GN60BG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt20gn60bg-datasheets-4745.pdf | 600V | 40A | TO-247-3 | Lead Free | 3 | 22 Weeks | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 136W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | 600V | 19 ns | 600V | 40A | 290 ns | 400V, 20A, 4.3 Ω, 15V | 30V | 6.5V | 1.9V @ 15V, 20A | Trench Field Stop | 120nC | 60A | 9ns/140ns | 230μJ (on), 580μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VTC1-B0BE-20M000 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GP60LDLG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gp60b2dlg-datasheets-9649.pdf | TO-264-3, TO-264AA | 3 | 3 | OBSOLETE (Last Updated: 3 weeks ago) | yes | LOW CONDUCTION LOSS | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 463W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 463W | 600V | 31 ns | 2.7V | 100A | 164 ns | 400V, 30A, 5 Ω, 15V | 20V | 6V | 2.7V @ 15V, 30A | PT | 90nC | 120A | 13ns/55ns | 260μJ (on), 250μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG120-15K-883B | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 125°C | -55°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemi-sg12015k883b-datasheets-3203.pdf | TO-3 | OBSOLETE (Last Updated: 1 month ago) | No | -40V | Negative | 1.5A | Fixed | 1 | 4mA | -15V | 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80GA60LD40 | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt80ga60ld40-datasheets-5652.pdf | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | 3 | 33 Weeks | 10.6g | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 625W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 143A | 22 ns | 600V | 2V | 52 ns | 600V | 143A | 326 ns | 400V, 47A, 4.7 Ω, 15V | 2.5V @ 15V, 47A | PT | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1A3P250L-PQG208 | Microsemi |
Min: 1 Mult: 1 |
70°C | 0°C | RoHS Compliant | PQFP | 1.2V | 208 | No | 4.5kB | 6144 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GN60BDQ2G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gn60bdq2g-datasheets-0343.pdf | 600V | 63A | TO-247-3 | Lead Free | 3 | 25 Weeks | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 203W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 26 ns | 600V | 63A | 255 ns | 400V, 30A, 4.3 Ω, 15V | 30V | 6.5V | 1.9V @ 15V, 30A | Trench Field Stop | 165nC | 90A | 12ns/155ns | 525μJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GROUPADATA/JM38510/10703BXA | Microsemi |
Min: 1 Mult: 1 |
Surface Mount | 125°C | -55°C | Non-RoHS Compliant | TO-39 | 3 | No | 50V | Positive | 1.5 % | 1.7A | Fixed | 1 | 6mA | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT54GA60B | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt54ga60b-datasheets-0746.pdf | TO-247-3 | 3 | 29 Weeks | yes | LOW CONDUCTION LOSS | No | e3 | PURE MATTE TIN | 416W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 416W | TO-247AD | 600V | 37 ns | 600V | 96A | 291 ns | 400V, 32A, 4.7 Ω, 15V | 30V | 6V | 2.5V @ 15V, 32A | PT | 158nC | 161A | 17ns/112ns | 534μJ (on), 466μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1A3P250-FPQ208 | Microsemi |
Min: 1 Mult: 1 |
3 (168 Hours) | 70°C | 0°C | CMOS | 4.1mm | RoHS Compliant | PQFP | 28mm | 28mm | 1.5V | 208 | 208 | No | 8542.39.00.01 | e0 | TIN LEAD | YES | QUAD | GULL WING | 225 | 1.5V | 0.5mm | COMMERCIAL | 1.575V | 30 | 4.5kB | 6144 | 350MHz | FIELD PROGRAMMABLE GATE ARRAY | 250000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GT120B2RDLG | Microsemi |
Min: 1 Mult: 1 |
download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gt120b2rdlg-datasheets-0943.pdf | TO-247-3 Variant | 3 | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 694W | 3 | Single | 1 | R-PSFM-T3 | SILICON | COLLECTOR | MOTOR CONTROL | N-CHANNEL | 694W | TO-247AD | 1.2kV | 73 ns | 1.2kV | 106A | 1200V | 305 ns | 800V, 50A, 4.7 Ω, 15V | 3.7V @ 15V, 50A | NPT | 240nC | 150A | 23ns/215ns | 3585μJ (on), 1910μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG120-20IG/883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Bulk | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | 3 | 3 | OBSOLETE (Last Updated: 1 month ago) | no | EAR99 | No | 1 | -40V | e0 | Tin/Lead (Sn/Pb) | Negative | SINGLE | 3 | 1.5A | Fixed | 1 | 4mA | 20V | -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT36GA60B | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | TO-247-3 | 3 | 29 Weeks | yes | LOW CONDUCTION LOSS | No | e3 | PURE MATTE TIN | 290W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 290W | TO-247AD | 600V | 29 ns | 600V | 65A | 262 ns | 400V, 20A, 10 Ω, 15V | 30V | 6V | 2.5V @ 15V, 20A | PT | 102nC | 109A | 16ns/122ns | 307μJ (on), 254μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LX8819-25CDT | Microsemi |
Min: 1 Mult: 1 |
Surface Mount | Bulk | 150°C | 0°C | BIPOLAR | Non-RoHS Compliant | DPAK | 6.6mm | 6.09mm | 5 | no | EAR99 | No | 1 | 10V | e0 | Tin/Lead (Sn/Pb) | Positive | SINGLE | GULL WING | 3 | 1 % | Other Regulators | R-PSSO-G5 | 3.5V | Adjustable, Fixed | 2 | 5mA | 2.5V | 1.3V | 0.36% | 0.008% | FIXED/ADJUSTABLE | 1A | 1A | 1.275V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT33GF120B2RDQ2G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt33gf120lrdq2g-datasheets-4685.pdf | 1.2kV | 64A | TO-247-3 Variant | Lead Free | 3 | 29 Weeks | 3 | yes | No | e1 | TIN SILVER COPPER | 357W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 31 ns | 1.2kV | 64A | 1200V | 355 ns | 800V, 25A, 4.3 Ω, 15V | 6.5V | 3V @ 15V, 25A | NPT | 170nC | 75A | 14ns/185ns | 1.315mJ (on), 1.515mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG140-20K/883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Bulk | 125°C | -55°C | Non-RoHS Compliant | 3 | OBSOLETE (Last Updated: 1 month ago) | Yes | 35V | Positive | 2 % | Fixed | 1 | 6mA | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X21DC60J | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | ISOTOP | 4 | 4 | EAR99 | No | UPPER | UNSPECIFIED | 4 | 2 | Other Diodes | 20A | 1.8V | ISOLATED | POWER | No Recovery Time > 500mA (Io) | 400μA | 600V | 250A | 0 s | Silicon Carbide Schottky | 600V | 20A | 1 | 400μA @ 600V | 1.8V @ 20A | -55°C~175°C | 2 Independent | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VPC1-B1B-24M5760000 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant |
