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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Depth | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | Packing Method | Number of Functions | Power Rating | Max Input Voltage | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Operating Temperature (Max) | Number of Channels | Element Configuration | Accuracy | Number of Elements | Subcategory | Input Offset Voltage (Vos) | Slew Rate | Voltage Gain | Gain | Qualification Status | JESD-30 Code | Screening Level | Lead/Base Style | Max Output Current | Min Input Voltage | Inductance | RAM Size | Forward Current | Forward Voltage | Output Type | Turn On Delay Time | Max Surge Current | Speed Grade | Turn-Off Delay Time | Max Dual Supply Voltage | Dual Supply Voltage | Amplifier Type | Gain Bandwidth Product | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Common Mode Rejection Ratio | Power Supply Rejection Ratio (PSRR) | Application | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | Transformer Type | Turns Ratio - Primary:Secondary | Quiescent Current | Speed | Power - Max | Output Voltage 1 | Number of Secondary Winding | Highest Frequency Band | Number of Primary Winding | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Number of Registers | Reverse Voltage (DC) | DC Current Gain-Min (hFE) | Voltage - Output | Average Bias Current-Max (IIB) | Dropout Voltage1-Nom | Load Regulation-Max(%) | Voltage - Peak Reverse (Max) | Voltage Tolerance-Max | DC Resistance (DCR) - Parallel | Voltage - Collector Emitter Breakdown (Max) | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Frequency - Transition | Current - Input Bias |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VTD3-J0BC-19M200 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSD30-12 | Microsemi |
Min: 1 Mult: 1 |
download | Screw | QC Terminal | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2009 | /files/microsemicorporation-msd3008-datasheets-9127.pdf | M1 | 5 | 5 | EAR99 | No | UPPER | SOLDER LUG | 5 | Single | 1 | Bridge Rectifier Diodes | 30A | SILICON | 200μA | 1.2kV | 300A | Three Phase | 3 | 1.2kV | 200μA @ 1200V | 1.6V @ 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VCUGLA-59M535 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50DL60HJ | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/microsemicorporation-apt50dl60hj-datasheets-0807.pdf | SOT-227-4, miniBLOC | 4 | 4 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 50A | 2V | ISOLATED | SILICON | 250μA | 600V | Single Phase | 1 | 250μA @ 600V | 2V @ 50A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VCC4-B3D-50M000 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSDM75-12 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2011 | /files/microsemicorporation-msdm7512-datasheets-0839.pdf | Module | 5 | 22 Weeks | 5 | No | UPPER | UNSPECIFIED | 5 | Single | 1 | 75A | 1.6V | ISOLATED | SILICON | 500μA | 1.2kV | 750A | Three Phase | 3 | 500μA @ 1200V | 1.6V @ 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2731-20 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Bulk | 200°C | -65°C | RoHS Compliant | 2004 | /files/microsemi-273120-datasheets-5309.pdf | 32 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 2 | 8.2 dB | 70W | 65V | 65V | 1.85A | 3.1GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60DF100HJ | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/microsemicorporation-apt60df100hj-datasheets-0924.pdf | SOT-227-4, miniBLOC | 4 | 4 | No | UPPER | UNSPECIFIED | 4 | Single | 1 | Bridge Rectifier Diodes | 90A | 2.8V | ISOLATED | SILICON | 100μA | 1kV | 540A | Single Phase | 1 | 100μA @ 1000V | 2.8V @ 60A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VPC1-B1B-24M576 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D60BCAG | Microsemi |
Min: 1 Mult: 1 |
download | Radial, Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt30d60bcag-datasheets-2579.pdf | 600V | 27A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 25 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | Common Anode | 2 | Rectifier Diodes | R-PSFM-T3 | 27A | 1.8V | 320A | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 320A | TO-247AD | 85 ns | 25 ns | Standard | 600V | 27A | 1 | 600V | 250μA @ 600V | 1.8V @ 30A | -55°C~150°C | 1 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG1536Y/DESC | Microsemi |
Min: 1 Mult: 1 |
Through Hole | 125°C | -55°C | BIPOLAR | RoHS Compliant | PDIP | 9.905mm | 8 | 8 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 28V | 2.54mm | 8 | MILITARY | 1 | Operational Amplifier | 5mV | 2 V/μs | 113.98dB | 40V | 28V | OPERATIONAL AMPLIFIER | 1MHz | 80 dB | 96.48dB | -28V | 0.035μA | 20nA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X60D60J | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 60A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 25 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | UPPER | UNSPECIFIED | 4 | 2 | 60A | 1.6V | 600A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 600A | 130 ns | 40 ns | Standard | 600V | 60A | 1 | 600V | 250μA @ 600V | 1.8V @ 60A | 2 Independent | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MS1251 | Microsemi |
Min: 1 Mult: 1 |
RoHS Compliant | Lead Free | 6 | e0 | TIN LEAD | YES | UNSPECIFIED | FLAT | 6 | 150°C | 1 | Other Transistors | Not Qualified | O-CXFM-F6 | SILICON | SINGLE | AMPLIFIER | NPN | 145W | 6A | VERY HIGH FREQUENCY B | 20 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT11GF120KRG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/microsemicorporation-apt11gf120krg-datasheets-4556.pdf | 1.2kV | 25A | TO-220-3 | Lead Free | 3 | yes | FAST SWITCHING | No | e3 | PURE MATTE TIN | 156W | 3 | Single | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | ISOLATED | POWER CONTROL | N-CHANNEL | TO-220AB | 1.2kV | 12 ns | 1.2kV | 25A | 1200V | 161 ns | 800V, 8A, 10 Ω, 15V | 30V | 6.5V | 3V @ 15V, 8A | NPT | 65nC | 44A | 7ns/100ns | 300μJ (on), 285μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LM741CH | Microsemi |
Min: 1 Mult: 1 |
70°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemi-lm741ch-datasheets-7158.pdf | TO-99 | 1MHz | 5 | 1 | 0.5 V/μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT11GF120BRDQ1G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2005 | /files/microsemicorporation-apt11gf120brdq1g-datasheets-4771.pdf | 1.2kV | 25A | TO-247-3 | Lead Free | 3 | 3 | yes | ULTRA FAST | No | e1 | TIN SILVER COPPER | 156W | 3 | Single | 1 | SILICON | POWER CONTROL | N-CHANNEL | TO-247AC | 1.2kV | 12 ns | 3V | 25A | 1200V | 161 ns | 800V, 8A, 10 Ω, 15V | 3V @ 15V, 8A | NPT | 65nC | 24A | 7ns/100ns | 300μJ (on), 285μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1A3P250L-1FGG144 | Microsemi |
Min: 1 Mult: 1 |
70°C | 0°C | RoHS Compliant | FBGA | 1.2V | No | 4.5kB | 1 | 6144 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GR120SSCD10 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt25gr120bscd10-datasheets-9644.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | 521W | Single | Insulated Gate BIP Transistors | N-CHANNEL | 521W | 1.2kV | 3.2V | 75A | 1200V | 600V, 25A, 4.3 Ω, 15V | 6.5V | 3.2V @ 15V, 25A | NPT | 203nC | 100A | 16ns/122ns | 434μJ (on), 466μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG7808T | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Bulk | 125°C | -55°C | RoHS Compliant | TO-39 | IN PRODUCTION (Last Updated: 1 month ago) | Yes | Positive | 2 % | 1.5A | Fixed | 1 | 8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT65GP60B2G | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt65gp60b2g-datasheets-5879.pdf | 600V | 100A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 833W | 3 | Single | 1 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 600V | 84 ns | 600V | 100A | 219 ns | 400V, 65A, 5 Ω, 15V | 2.7V @ 15V, 65A | PT | 210nC | 250A | 30ns/91ns | 605μJ (on), 896μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1A3P250L-VQ100I | Microsemi |
Min: 1 Mult: 1 |
85°C | -40°C | RoHS Compliant | 1.2V | 100 | No | 4.5kB | 6144 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15GP60BDQ1G | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt15gp60bdq1g-datasheets-0551.pdf | 600V | 15A | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | EAR99 | LOW CONDUCTION LOSS | No | e1 | TIN SILVER COPPER | 250W | 3 | Single | 1 | R-PSFM-T3 | 8 ns | 29 ns | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 250W | TO-247AD | 600V | 20 ns | 600V | 56A | 160 ns | 400V, 15A, 5 Ω, 15V | 2.7V @ 15V, 15A | PT | 55nC | 65A | 8ns/29ns | 130μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGE2688-1G | Microsemi |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | 11.1mm | 5.1mm | Lead Free | 21mm | 7 | yes | EAR99 | HEIGHT DIM INCLUDES TERMINALS ALSO | No | TRAY | 4W | Gull Wing | 87 μH | SMPS TRANSFORMER | 1:61.5 | 1000V | 1 | 1 | 168MOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GR120L | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt50gr120l-datasheets-0778.pdf | TO-264-3, TO-264AA | Lead Free | 21 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | 694W | Insulated Gate BIP Transistors | N-CHANNEL | 694W | 1.2kV | 3.2V | 117A | 1200V | 600V, 50A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 50A | NPT | 445nC | 200A | 28ns/237ns | 2.14mJ (on), 1.48mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG120-12R/883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Bulk | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | 2 | OBSOLETE (Last Updated: 1 month ago) | no | EAR99 | No | 1 | -35V | e0 | Tin/Lead (Sn/Pb) | Negative | BOTTOM | PIN/PEG | 2 | Other Regulators | O-MBFM-P2 | MIL-STD-883 Class B | 1.5A | Fixed | 1 | 4mA | 12V | -12V | 1.1V | 0.08% | 4% | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75GN120B2G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | /files/microsemicorporation-apt75gn120lg-datasheets-6327.pdf | 1.2kV | 200A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 833W | 3 | Single | 1 | Insulated Gate BIP Transistors | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 1.2kV | 101 ns | 1.2kV | 200A | 1200V | 925 ns | 800V, 75A, 1 Ω, 15V | 6.5V | 2.1V @ 15V, 75A | Trench Field Stop | 425nC | 225A | 60ns/620ns | 8045μJ (on), 7640μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG120-20K/883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Bulk | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | 2 | 3 | OBSOLETE (Last Updated: 1 month ago) | no | EAR99 | No | 1 | -40V | e0 | Tin/Lead (Sn/Pb) | Negative | BOTTOM | PIN/PEG | 2 | O-MBFM-P2 | 1.5A | Fixed | 1 | 4mA | 20V | -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30GS60BRDQ2G | Microsemi |
Min: 1 Mult: 1 |
download | Thunderbolt IGBT® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | RoHS Compliant | 1999 | /files/microsemicorporation-apt30gs60brdq2g-datasheets-2648.pdf | TO-247-3 | 25 Weeks | no | No | 250W | Single | 250W | 25 ns | 600V | 600V | 54A | 400V, 30A, 9.1 Ω, 15V | 3.15V @ 15V, 30A | NPT | 145nC | 113A | 16ns/360ns | 570μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG309K | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Bulk | 70°C | 0°C | Non-RoHS Compliant | OBSOLETE (Last Updated: 1 month ago) | Yes | 25V | Positive | 7V | Fixed | 1 | 10mA | 5.05V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GR120S | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2001 | /files/microsemicorporation-apt25gr120b-datasheets-5618.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 19 Weeks | EAR99 | 521W | Insulated Gate BIP Transistors | N-CHANNEL | 521W | 1.2kV | 3.2V | 75A | 1200V | 600V, 25A, 4.3 Ω, 15V | 30V | 6.5V | 3.2V @ 15V, 25A | NPT | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) |
