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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Collector Emitter Breakdown Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT50GR120JD30 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2001 | /files/microsemicorporation-apt50gr120jd30-datasheets-2285.pdf | SOT-227-4 | Lead Free | 22 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | EAR99 | 417W | 1 | Insulated Gate BIP Transistors | 5.55nF | Single | 417W | 1.2kV | 3.2V | 84A | Standard | 1200V | 30V | 1.1mA | 3.2V @ 15V, 50A | NPT | No | 5.55nF @ 25V | |||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N4148UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjan1n4148ur1-datasheets-4537.pdf | 1.7(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50H60T2G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | SP2 | 22 | EAR99 | No | 176W | 3.15nF | Full Bridge Inverter | 600V | 600V | 80A | Standard | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5418US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5418us-datasheets-4295.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75TA120PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt75ta120pg-datasheets-3874.pdf | SP6 | 21 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 350W | UPPER | UNSPECIFIED | 21 | 6 | R-XUFM-X21 | 5.34nF | SILICON | Three Phase | ISOLATED | POWER CONTROL | N-CHANNEL | 350W | 1.2kV | 335 ns | 2.1V | 100A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 75A | Trench Field Stop | No | 5.34nF @ 25V | |||||||||||||||||||||||||
| UPS5100E3 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | Yes with exemptions | /files/microsemi-ups5100e3-datasheets-8368.pdf | 3 | Single Dual Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300TL60G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgt300tl60g-datasheets-3994.pdf | SP6 | Lead Free | 12 | 36 Weeks | 11 | EAR99 | 935W | UPPER | UNSPECIFIED | 12 | 4 | Insulated Gate BIP Transistors | R-XUFM-X12 | 18.4nF | 115 ns | 225 ns | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 935W | 600V | 180 ns | 600V | 400A | Standard | 370 ns | 1.9 V | 20V | 350μA | 1.9V @ 15V, 300A | Trench Field Stop | No | 18.4nF @ 25V | ||||||||||||||||||||||||
| JANTX1N6912UTK2CS | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Tray | RoHS non-compliant | /files/microsemi-jan1n6912utk2as-datasheets-8567.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT600DU60G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt600du60g-datasheets-4079.pdf | SP6 | 7 | 36 Weeks | 7 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 2.3kW | UPPER | UNSPECIFIED | 7 | Dual | 2 | 49nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 2300W | 600V | 205 ns | 600V | 700A | Standard | 400 ns | 750μA | 1.8V @ 15V, 600A | Trench Field Stop | No | 49nF @ 25V | |||||||||||||||||||||||||
| GRP-A-DATA-JAN1N5554US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400A120D3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt400a120d3g-datasheets-4376.pdf | D-3 Module | 7 | 36 Weeks | 11 | EAR99 | 2.1kW | UPPER | UNSPECIFIED | 11 | Dual | 2 | Insulated Gate BIP Transistors | R-XUFM-X7 | 29nF | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 2100W | 1.2kV | 400 ns | 1.2kV | 580A | Standard | 1200V | 830 ns | 2.1 V | 20V | 750μA | 2.1V @ 15V, 400A | Trench Field Stop | No | 29nF @ 25V | |||||||||||||||||||||||||
| GRP-ABC-JANTX1N5802 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT30X60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt30x60t3g-datasheets-4782.pdf | SP3 | 25 | 36 Weeks | 32 | yes | EAR99 | e1 | TIN SILVER COPPER | 90W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X25 | 1.6nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 90W | 600V | 170 ns | 600V | 50A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 30A | Trench Field Stop | Yes | 1.6nF @ 25V | |||||||||||||||||||||
| JAN1N1126RA | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-jan1n1126ra-datasheets-9988.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL90A120T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl90a120t1g-datasheets-4863.pdf | SP1 | Lead Free | 36 Weeks | 12 | EAR99 | No | 385W | Dual | 1 | Insulated Gate BIP Transistors | 4.4nF | Half Bridge | 385W | 1.2kV | 1.2kV | 110A | Standard | 1200V | 2.25 V | 20V | 250μA | 2.25V @ 15V, 75A | Trench Field Stop | Yes | 4.4nF @ 25V | ||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N6625 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n6622-datasheets-4586.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100DH60TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100dh60tg-datasheets-4935.pdf | SP4 | 14 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 340W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X14 | 6.1nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 340W | 600V | 180 ns | 600V | 150A | Standard | 370 ns | 1.9 V | 250μA | 1.9V @ 15V, 100A | Trench Field Stop | Yes | 6.1nF @ 25V | ||||||||||||||||||||
| GRP-ABC-JANTX1N4245 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n4247-datasheets-6670.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT35X120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt35x120t3g-datasheets-5002.pdf | SP3 | 25 | 36 Weeks | 32 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 25 | 6 | Insulated Gate BIP Transistors | R-XUFM-X25 | 2.5nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 208W | 1.2kV | 140 ns | 1.2kV | 55A | Standard | 1200V | 610 ns | 2.1 V | 20V | 250μA | 2.1V @ 15V, 35A | Trench Field Stop | Yes | 2.5nF @ 25V | |||||||||||||||||||||
| GRP-B-DATA-JANTX1N5552 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n5550-datasheets-2378.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100A120T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Screw, Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt100a120t3ag-datasheets-5079.pdf | SP3 | 10 | 36 Weeks | 20 | EAR99 | 595W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X10 | 7.2nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 595W | 1.2kV | 340 ns | 1.2kV | 140A | Standard | 1200V | 610 ns | 2.1 V | 250μA | 2.1V @ 15V, 100A | Trench Field Stop | Yes | 7.2nF @ 25V | |||||||||||||||||||||||
| SPB16045 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-spb16040-datasheets-7686.pdf | 4 | Dual Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100DU170TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100du170tg-datasheets-5206.pdf | SP4 | 12 | 36 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 560W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X12 | 9nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 560W | 1.7kV | 450 ns | 1.7kV | 150A | Standard | 1700V | 1100 ns | 2.4 V | 250μA | 2.4V @ 15V, 100A | Trench Field Stop | Yes | 9nF @ 25V | |||||||||||||||||||
| GRP-B-DATA-JANTX1N3614 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n3611-datasheets-4721.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150SK170G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt150sk170g-datasheets-5306.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 890W | UPPER | UNSPECIFIED | 5 | 1 | 13.5nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 890W | 1.7kV | 450 ns | 1.7kV | 250A | Standard | 1700V | 1100 ns | 350μA | 2.4V @ 15V, 150A | Trench Field Stop | No | 13.5nF @ 25V | ||||||||||||||||||||||||||
| JANTX1N6638U/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpadatajantx1n6643u-datasheets-6375.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200H60G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt200h60g-datasheets-5457.pdf | SP6 | 12 | 36 Weeks | 12 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 625W | UPPER | UNSPECIFIED | 12 | 4 | 12.3nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 625W | 600V | 180 ns | 600V | 290A | Standard | 370 ns | 250μA | 1.9V @ 15V, 200A | Trench Field Stop | No | 12.3nF @ 25V | ||||||||||||||||||||||||||||
| R4360 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-s43100ts-datasheets-5381.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GP60J | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt50gp60j-datasheets-7538.pdf | 600V | 100A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 3 weeks ago) | yes | LOW CONDUCTION LOSS | 329W | UPPER | UNSPECIFIED | 4 | 1 | 5.7nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 55 ns | 600V | 100A | Standard | 202 ns | 500μA | 2.7V @ 15V, 50A | PT | No | 5.7nF @ 25V | |||||||||||||||||||||||||||
| MFS116 | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | /files/microsemi-mfs116-datasheets-3351.pdf | 2 | Single |
