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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Height | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Output Current | Forward Current | Forward Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Application | Natural Thermal Resistance | Speed | Power - Max | Frequency Range | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N645-1 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6451-datasheets-0792.pdf | DO-204AH, DO-35, Axial | 20pF | 1.88mm | Contains Lead | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | 400mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 5A | 50nA | 225V | 5A | Standard | 225V | 400mA | 0.4A | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N6622 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n6622-datasheets-4586.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HSM880J/TR13 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-hsm8100je3tr13-datasheets-4759.pdf | DO-214AB, SMC | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | e0 | Tin/Lead (Sn/Pb) | HSM880 | Single | 8A | 780mV | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 80V | 300A | Schottky | 80V | 8A | 500μA @ 80V | 780mV @ 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5816R | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-jantxv1n5816r-datasheets-1566.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemi-jantx1n5806-datasheets-9116.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 2.5A | 975mV | ISOLATED | 36 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1 | 1A | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5550 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 12 Weeks | 2 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 100A | 2 μs | Standard | 200V | 5A | 1 | 5A | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N5811US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-1n5811aus-datasheets-6164.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60D20BG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt60d20bg-datasheets-6589.pdf | 200V | 60A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | Single | 1 | R-PSFM-T2 | 60A | 60A | 1.3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 200V | 600A | 31 ns | Standard | 200V | 60A | 1 | 250μA @ 200V | 1.3V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5616US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4249 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 25A | 5 μs | Standard | 1kV | 1A | 1A | 1000V | 1μA @ 1000V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6912UTK2AS | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Tray | RoHS non-compliant | /files/microsemi-jan1n6912utk2as-datasheets-8567.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6627 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | A, Axial | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | METALLURGICALLY BONDED, HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 440V | 75A | 30 ns | Standard | 440V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM4901D | Microsemi |
Min: 1 Mult: 1 |
Attenuator|Switch | RoHS non-compliant | /files/microsemi-um4001d-datasheets-6397.pdf | 2 | Single | HF|S | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6642US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6643us-datasheets-0665.pdf | SQ-MELF, B | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 75V | 2.5A | 20 ns | Standard | 100V | 300mA | 0.3A | 500nA @ 100V | 1.2V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N6642 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-data1n6642jans-datasheets-6025.pdf | 1.91(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5623 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | EAR99 | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | DO-7 | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 12V 1MHz | 1000V | 500nA @ 1000V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5417 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5420-datasheets-7765.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6621US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | 30 ns | Standard | 440V | 1.2A | 1 | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5186 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5187-datasheets-3585.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES803 | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Bulk | Not Applicable | 175°C | -55°C | Non-RoHS Compliant | 1996 | /files/microsemicorporation-ues802r-datasheets-0495.pdf | 1 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 70A | 975mV | CATHODE | EFFICIENCY | SILICON | 25μA | 150V | 800A | DO-5 | 50 ns | RECTIFIER DIODE | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N3595-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-jansdatajans1n35951-datasheets-6187.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6073 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | 155°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 0.85A | 50V | 1μA @ 50V | 2.04V @ 9.4A | 850mA | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N6631 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n6631-datasheets-0043.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5419E3 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 1μA | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANS1N5550US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60TLM99T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptcv60tlm99t3g-datasheets-2214.pdf | SP3 | 32 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE | No | 90W | DUAL | UNSPECIFIED | 32 | 2 | Insulated Gate BIP Transistors | 1.6nF | SILICON | Three Level Inverter - IGBT, FET | ISOLATED | POWER CONTROL | N-CHANNEL | 90W | 600V | 170 ns | 1.9V | 50A | Standard | 310 ns | 20V | 250μA | 1.9V @ 15V, 30A | Trench Field Stop | Yes | 1.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D20S | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | RoHS non-compliant | /files/microsemi-apt30d20s-datasheets-5819.pdf | 3 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100A1202G | Microsemi |
Min: 1 Mult: 1 |
download | Screw, Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP2 | 22 Weeks | 18 | EAR99 | 480W | Dual | 7.2nF | Half Bridge | 480W | 1.2kV | 1.2kV | 140A | Standard | 1200V | 50μA | 2.1V @ 15V, 100A | Trench Field Stop | No | 7.2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5619US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single |
