Products
Manufacturer
RFQ
NEWS
ContactMicrosemi(18086)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Output Type | Turn On Delay Time | Turn-Off Delay Time | Amplifier Type | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Function | Power - Max | Collector Emitter Breakdown Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Power Supply Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTGF50TL60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf50tl60t3g-datasheets-2140.pdf | SP3 | 16 | 32 | EAR99 | No | 250W | UPPER | UNSPECIFIED | 25 | 4 | Insulated Gate BIP Transistors | R-XUFM-X16 | 2.2nF | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 600V | 52 ns | 600V | 65A | Standard | 151 ns | 2.45 V | 20V | 250μA | 2.45V @ 15V, 50A | NPT | Yes | 2.2nF @ 25V | ||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5621 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60HM70BT3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 22 Weeks | 3 | EAR99 | 250W | 1 | Insulated Gate BIP Transistors | 3.15nF | Boost Chopper, Full Bridge | 250W | 600V | 1.9V | 50A | Standard | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-JANS1N6761UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n5819ur1-datasheets-5682.pdf | 2.66(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GF120JCU2 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis, Screw, Stud | Chassis, Stud Mount | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | 227W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 1.65nF | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 110 ns | 1.2kV | 45A | Standard | 1200V | 386 ns | 3.7 V | 20V | 250μA | 3.7V @ 15V, 25A | NPT | No | 1.65nF @ 25V | |||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5614US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60TLM70T3G | Microsemi |
Min: 1 Mult: 1 |
download | Screw | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptcv60tlm70t3g-datasheets-2831.pdf | Module | 16 | 24 | IN PRODUCTION (Last Updated: 3 weeks ago) | AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE | No | UNSPECIFIED | 32 | Dual | 2 | Insulated Gate BIP Transistors | R-CDFM-X16 | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 176W | 176W | 170 ns | 600V | 80A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | ||||||||||||||||||||||||||||||||
| UPS3100E3 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | Yes with exemptions | /files/microsemi-ups3100e3-datasheets-9304.pdf | 3 | Single Dual Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50TDU170PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50tdu170pg-datasheets-3918.pdf | SP6 | 21 | 36 Weeks | 21 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 310W | UPPER | UNSPECIFIED | 21 | 6 | 4.4nF | SILICON | Triple, Dual - Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 310W | 1.7kV | 450 ns | 1.7kV | 70A | Standard | 1700V | 1050 ns | 250μA | 2.4V @ 15V, 50A | Trench Field Stop | No | 4.4nF @ 25V | |||||||||||||||||||||||||||||
| GRP-ABC-JAN1N1188 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpadatajan1n1190-datasheets-2479.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL700SK120D3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgl700sk120d3g-datasheets-4019.pdf | Module | 36 Weeks | 3kW | 1 | Insulated Gate BIP Transistors | 37.2nF | Single | 3000W | 1.2kV | 2.2V | 840A | Standard | 1200V | 20V | 5mA | 2.2V @ 15V, 600A | Trench Field Stop | No | 37.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5616/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ400A120T6G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptglq400a120t6g-datasheets-4129.pdf | SP6 | Lead Free | 36 Weeks | 6 | EAR99 | 1.9kW | 1 | Insulated Gate BIP Transistors | 24.6nF | 30 ns | 290 ns | Half Bridge | 1900W | 1.2kV | 2.4V | 700A | Standard | 1200V | 20V | 200μA | 2.4V @ 15V, 400A | Trench Field Stop | Yes | 24.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||
| MQ1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-mq1n5806-datasheets-0728.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ100SK65T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2013 | /files/microsemicorporation-aptgtq100sk65t1g-datasheets-4725.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Buck Chopper | 250W | Standard | 650V | 100A | 100μA | 2.2V @ 15V, 100A | Yes | 6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N1204A | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpbdatajantx1n1204a-datasheets-7518.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ100A65T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2013 | /files/microsemicorporation-aptgtq100a65t1g-datasheets-4823.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Half Bridge | 250W | Standard | 650V | 100A | 100μA | 2.2V @ 15V, 100A | Yes | 6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TDM30016 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS Compliant | /files/microsemi-tdm30014-datasheets-9563.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200DA60T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt200da60t3ag-datasheets-4881.pdf | SP3 | 8 | 36 Weeks | 32 | EAR99 | 750W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X8 | 12.3nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 750W | 600V | 180 ns | 600V | 290A | Standard | 370 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 200A | Trench Field Stop | Yes | 12.3nF @ 25V | |||||||||||||||||||||||||||
| 1N4938-1JANTX | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-1n49381jantx-datasheets-9032.pdf | 2.29(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50H120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50h120t3g-datasheets-4957.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 270W | UPPER | UNSPECIFIED | 25 | 4 | R-XUFM-X25 | 3.6nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 270W | 1.2kV | 140 ns | 2.1V | 75A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 50A | Trench Field Stop | Yes | 3.6nF @ 25V | |||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5623US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200A60T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgt200a60t3ag-datasheets-5032.pdf | SP3 | 10 | 36 Weeks | 20 | EAR99 | No | 750W | UPPER | UNSPECIFIED | 25 | Dual | 2 | R-XUFM-X10 | 12.3nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 750W | 600V | 180 ns | 600V | 290A | Standard | 370 ns | 250μA | 1.9V @ 15V, 200A | Trench Field Stop | Yes | 12.3nF @ 25V | |||||||||||||||||||||||||||||||
| LX1701CLQ | Microsemi |
Min: 1 Mult: 1 |
download | RoHS Compliant | /files/microsemi-lx1701clqtr-datasheets-3040.pdf | 16 | 1-Channel Mono | Class-D | Speaker | Dual | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75H60T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt75h60t1g-datasheets-5135.pdf | SP1 | 12 | 36 Weeks | 12 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | 12 | 4 | Insulated Gate BIP Transistors | 4.62nF | SILICON | Full Bridge Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 600V | 100A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||
| UFT7015 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS Compliant | /files/microsemi-uft7260-datasheets-0932.pdf | 4 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150DU120TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt150du120tg-datasheets-5241.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 690W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X12 | 10.7nF | SILICON | Dual, Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 690W | 1.2kV | 335 ns | 2.1V | 220A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 150A | Trench Field Stop | Yes | 10.7nF @ 25V | |||||||||||||||||||||||||
| GB300A | Microsemi |
Min: 1 Mult: 1 |
download | RoHS non-compliant | /files/microsemi-gb300-datasheets-0967.pdf | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150TL60G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgt150tl60g-datasheets-5378.pdf | SP6 | 12 | 36 Weeks | 12 | EAR99 | 480W | UPPER | UNSPECIFIED | 12 | 4 | Insulated Gate BIP Transistors | 9.2nF | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 600V | 180 ns | 600V | 200A | Standard | 370 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 150A | Trench Field Stop | No | 9.2nF @ 25V | |||||||||||||||||||||||||||||||
| GRP-B-DATA-JANS1N6844U3 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-grpbdatajans1n6844u3-datasheets-9064.pdf | 3 | Single Dual Anode |
