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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Feature | Terminal Finish | Applications | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Data Rate | Memory Size | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Speed Grade | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Number of Registers | Transition Frequency | Number of Inputs | DC Current Gain-Min (hFE) | Number of Gates | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Core Processor | Connectivity | Number of Logic Elements/Cells | Number of Logic Blocks (LABs) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| M2S005S-1VFG400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 400-VFBGA (17x17) | 171 | DDR | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 5K Logic Modules | 128KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6351 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/472 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-jantxv2n6350-datasheets-0403.pdf | TO-205AC, TO-33-4 Metal Can | 4 | 4 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | No | e0 | Tin/Lead (Sn/Pb) | NPN | BOTTOM | WIRE | 4 | Single | 1 | Qualified | SILICON | COLLECTOR | 1W | 2.5V | 150V | 5A | 500ns | 150V | 12V | NPN - Darlington | 1000 @ 5A 5V | 2.5V @ 10mA, 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010-1VFG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3763 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/396 | Through Hole | Through Hole | -55°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2002 | TO-205AD, TO-39-3 Metal Can | 3 | 20 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 1W | BOTTOM | WIRE | 2 | 1 | Other Transistors | Qualified | SILICON | SINGLE | COLLECTOR | SWITCHING | PNP | 1W | 60V | 1.5A | 150MHz | 115ns | 60V | 10μA ICBO | PNP | 20 @ 1A 1.5V | 900mV @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-1VFG400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 10 Weeks | 400-VFBGA (17x17) | 195 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 10K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N4399 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/433 | Through Hole | Through Hole | -55°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2002 | /files/microsemi-jantx2n4399-datasheets-6781.pdf | TO-204AA, TO-3 | 2 | 20 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 5W | BOTTOM | PIN/PEG | 2 | 5W | 1 | Qualified | O-MBFM-P2 | SILICON | SINGLE | COLLECTOR | SWITCHING | PNP | 60V | 30A | 60V | 5V | 100μA | PNP | 15 @ 15A 2V | 750mV @ 1A, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010-FG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 1.2V | 11 Weeks | 1.26V | 1.14V | 484 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 3 weeks ago) | 400MHz | M2S010 | 484-FPBGA (23x23) | 667 Mbps | 256kB | 233 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | 12084 | 1007 | FPGA - 10K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6437 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2007 | 2 | 3 | EAR99 | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL | 200W | BOTTOM | PIN/PEG | Qualified | O-MBFM-P2 | PNP | 100V | 25A | 30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S005S-VF400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 169 | DDR | 64KB | MCU, FPGA | 171 | 166MHz | 171 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 5K Logic Modules | 6060 | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3635 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 2007 | /files/microsemicorporation-jans2n3637-datasheets-3852.pdf | TO-205AD, TO-39-3 Metal Can | Contains Lead | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 1W | TO-39 | 1W | 140V | 1A | 140V | 1A | 140V | 10μA | PNP | 100 @ 50mA 10V | 600mV @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-1VFG400T2 | Microsemi |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q100, SmartFusion®2 | -40°C~125°C TJ | Tray | 3 (168 Hours) | RoHS Compliant | /files/microsemicorporation-m2s005s1vfg400t2-datasheets-2815.pdf | 400-LFBGA | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | NOT SPECIFIED | NOT SPECIFIED | 195 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N6650 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/527 | Through Hole | Through Hole | -65°C~175°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2002 | /files/microsemicorporation-2n6649-datasheets-5468.pdf | TO-204AA, TO-3 | 2 | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | PNP | BOTTOM | PIN/PEG | 2 | Single | 1 | Qualified | O-MBFM-P2 | SILICON | COLLECTOR | 5W | 2V | 80V | 10A | 80V | 5V | 1mA | PNP - Darlington | 1000 @ 5A 3V | 3V @ 100μA, 10A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-1FG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 100MHz | 1mA | Non-RoHS Compliant | 2009 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 484-BGA | 1.5V | 12 Weeks | 484 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | No | 120MHz | A2F500M3G | 484-FPBGA (23x23) | MCU - 41, FPGA - 128 | DMA, POR, WDT | ARM | 64KB | 1 | MCU, FPGA | 100MHz | 11520 | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 24 | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSC3340XJJ | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tray | 4 (72 Hours) | 100°C | -40°C | RoHS Compliant | 2007 | /files/microchiptechnology-vsc3340ev-datasheets-2289.pdf | 484-BBGA, FCBGA | Advanced Signal Equalization | Backplane, PCIe, Telecommunications, Video | 40 | Single | 40:40 | 2.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-FCSG325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10AM02FG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10am02fg-datasheets-2733.pdf | SP6 | 7 | 16 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 160 ns | 240ns | 160 ns | 500 ns | 495A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1900A | 3000 mJ | 2 N-Channel (Half Bridge) | 40000pF @ 25V | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | Contains Lead | 325 | 13 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20DUM04G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20dum04g-datasheets-9426.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 32 ns | 64ns | 116 ns | 88 ns | 372A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1488A | 0.005Ohm | 3000 mJ | 2 N-Channel (Dual) | 28900pF @ 25V | 5m Ω @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-1FG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | Surface Mount | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 100MHz | 1mA | 2.44mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 484-BGA | 23mm | 23mm | 1.5V | Contains Lead | 484 | 12 Weeks | 1.575V | 1.425V | 484 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | No | e0 | Tin/Lead (Sn/Pb) | BOTTOM | BALL | 225 | 1.5V | A2F500M3G | 20 | Field Programmable Gate Arrays | MCU - 41, FPGA - 128 | DMA, POR, WDT | ARM | 64KB | 1 | MCU, FPGA | 128 | 11520 | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 24 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM24SCG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50am24scg-datasheets-9491.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 1.25kW | 2 | R-XUFM-X7 | 10 ns | 17ns | 41 ns | 50 ns | 150A | 30V | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 19600pF @ 25V | 28m Ω @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010T-1FG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 484-BGA | 10 Weeks | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 3 weeks ago) | M2S010T | 484-FPBGA (23x23) | 233 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 10K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H18FG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm100h18fg-datasheets-9546.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 4 | R-XUFM-X12 | 18 ns | 12ns | 40 ns | 155 ns | 43A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 172A | 0.21Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 10400pF @ 25V | 210m Ω @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-1VFG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 1.56mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | yes | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100DUM90G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 22 Weeks | 6 | No | 1.25kW | 1.25kW | 2 | SP6 | 20.7nF | 18 ns | 12ns | 40 ns | 155 ns | 78A | 30V | 1000V 1kV | 1250W | 2 N-Channel (Dual) | 20700pF @ 25V | 105mOhm @ 39A, 10V | 5V @ 10mA | 78A | 744nC @ 10V | Standard | 105 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-VFG400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 207 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 207 | 166MHz | 207 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10TDUM09PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | SP6 | 21 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 21 | 390W | 6 | R-XUFM-X21 | 35 ns | 70ns | 125 ns | 95 ns | 139A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 430A | 0.01Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-FG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 484-BGA | 10 Weeks | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025T | 484-FPBGA (23x23) | 267 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20DHM08G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 8 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 8 | 781W | 2 | R-XUFM-X8 | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S090-FCSG325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.16mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 13.5mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | R-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 90K Logic Modules | 86316 | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20DHM16TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20dhm16tg-datasheets-5232.pdf | SP4 | 14 | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 2 | Not Qualified | 104A | SILICON | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 390W | 0.019Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 7220pF @ 25V | 19m Ω @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard |
