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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Application | Speed | Power - Max | Frequency Range | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTXV1N6663US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-jantxv1n6663us-datasheets-0768.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4247 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 25A | 5 μs | Standard | 600V | 1A | 1A | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM4001D | Microsemi |
Min: 1 Mult: 1 |
download | Attenuator|Switch | RoHS non-compliant | /files/microsemi-um4001d-datasheets-6397.pdf | 2 | Single | HF|S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5623 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | DO-7 | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 12V 1MHz | 1000V | 500nA @ 1000V | 1.6V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N914 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-1n914tr-datasheets-4494.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N645-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/240 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6451-datasheets-0792.pdf | DO-204AH, DO-35, Axial | 2 | 13 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | Single | 1 | Qualified | 400mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.5W | 225V | 5A | Standard | 0.4A | 50nA @ 225V | 1V @ 400mA | 400mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST15035 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-fst15035-datasheets-2558.pdf | 10 | Dual Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5802US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 8541.10.00.80 | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 35A | 25 ns | Standard | 50V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 50V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5622US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R30760 | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Bulk | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-r30760-datasheets-5946.pdf | Contains Lead | 1 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | EXCELLENT RELIABILITY | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | O-MUPM-D1 | 85A | POWER | SILICON | 25μA | 600V | 1.5kA | 1.1V | RECTIFIER DIODE | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-1N5819UR1JANTX | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5819ur1-datasheets-5682.pdf | 2.66(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5184 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 7 Weeks | no | EAR99 | HIGH RELIABILITY | not_compliant | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | NO | WIRE | 175°C | 1 | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 1.5W | 10000V | Standard | 0.1A | 10000V | 5μA @ 10000V | 10V @ 100mA | 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSASC75H45F | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS non-compliant | /files/microsemi-msasc75h45f-datasheets-3906.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N914 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/116 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1998 | /files/microsemicorporation-1n914-datasheets-7398.pdf | DO-204AH, DO-35, Axial | 2 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116 | WIRE | Single | 1 | Qualified | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 1A | 0.075A | 2.8pF @ 1.5V 1MHz | 500nA @ 75V | 1.2V @ 50mA | 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3600/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n3600tr-datasheets-1765.pdf | 2.72(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF50H60T2G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf50h60t2g-datasheets-2197.pdf | SP3 | 22 | EAR99 | No | 250W | 1 | Insulated Gate BIP Transistors | 2.2nF | Full Bridge Inverter | 600V | 600V | 65A | Standard | 2.45 V | 20V | 250μA | 2.45V @ 15V, 50A | NPT | Yes | 2.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5553US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF50DSK120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf50dsk120t3g-datasheets-2269.pdf | SP3 | Lead Free | 11 | 16 | EAR99 | 312W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X11 | 3.45nF | Dual Buck Chopper | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 100 ns | 1.2kV | 70A | Standard | 1200V | 400 ns | 3.7 V | 20V | 250μA | 3.7V @ 15V, 50A | NPT | Yes | 3.45nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM6001A | Microsemi |
Min: 1 Mult: 1 |
Attenuator|Switch | RoHS non-compliant | /files/microchiptechnology-um6001b-datasheets-3131.pdf | 1.78(Max) | 2 | Single | UHF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75DH60T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw, Through Hole | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2013 | SP1 | 9 | 22 Weeks | 12 | EAR99 | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X9 | 4.62nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 600V | 100A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N6631U | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n6631-datasheets-0043.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400SK120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt400sk120g-datasheets-3849.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.785kW | UPPER | UNSPECIFIED | 5 | 1 | 28nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1785W | 1.2kV | 340 ns | 1.2kV | 560A | Standard | 1200V | 620 ns | 750μA | 2.1V @ 15V, 400A | Trench Field Stop | No | 28nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5615US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400U170D4G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2008 | /files/microsemicorporation-aptgt400u170d4g-datasheets-3973.pdf | D4 | 4 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 2.08kW | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 33nF | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 2080W | 1.7kV | 400 ns | 1.7kV | 800A | Standard | 1700V | 1200 ns | 20V | 1mA | 2.4V @ 15V, 400A | Trench Field Stop | No | 33nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT30080 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-cpt30080-datasheets-8262.pdf | 3 | Dual Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100H170G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt100h170g-datasheets-4063.pdf | SP6 | 12 | 36 Weeks | 12 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 560W | UPPER | UNSPECIFIED | 12 | 4 | Insulated Gate BIP Transistors | 9nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 560W | 1.7kV | 450 ns | 1.7kV | 150A | Standard | 1700V | 1100 ns | 2.4 V | 20V | 350μA | 2.4V @ 15V, 100A | Trench Field Stop | No | 9nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N5552 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n5550-datasheets-2378.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400TL65G | Microsemi |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant | 2014 | 36 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5618US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ25H120T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2013 | Module | 36 Weeks | SP1 | Full Bridge | 165W | Standard | 1200V | 50A | 50μA | 2.42V @ 15V, 25A | Trench Field Stop | Yes | 1.43nF @ 25V |
