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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Application | Natural Thermal Resistance | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Organization | Self Refresh | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Power Supply Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JAN1N5417 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| LX5512BLQ | Microsemi |
Min: 1 Mult: 1 |
download | RoHS Compliant | /files/microsemi-lx5512blq-datasheets-7677.pdf | 16 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3611 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | 38 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 30A | Standard | 200V | 1A | 1A | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5621US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5419 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANS1N5617 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5420 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N5554US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6660 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | 150°C | -65°C | SCHOTTKY | Non-RoHS Compliant | /files/microsemicorporation-jantx1n6660-datasheets-8454.pdf | TO-254 | 3 | 8 Weeks | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/608 | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Qualified | S-XSFM-P3 | 15A | 1V | ISOLATED | POWER | SILICON | 45V | 300A | RECTIFIER DIODE | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5617US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5622US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 100V | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| S43140 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-s43100ts-datasheets-5381.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N457 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/193 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n458a-datasheets-1107.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/193D | WIRE | 2 | Single | 1 | Qualified | 225mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 1μA | 70V | 1A | Standard | 0.075A | 25nA @ 70V | 1V @ 100mA | 150mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AD110 | Microsemi |
Min: 1 Mult: 1 |
download | RoHS non-compliant | /files/microsemi-ad110-datasheets-6706.pdf | 9.4(Max) | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4938-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/169 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n49381-datasheets-4375.pdf | DO-204AH, DO-35, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 100mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 200V | 2A | 50 ns | Standard | 175V | 100μA @ 200V | 1V @ 100mA | 100mA DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N4454-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n44541-datasheets-2271.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6627 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | 2 | Single | 1 | Qualified | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 440V | 75A | 30 ns | Standard | 440V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N4148-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n41481-datasheets-2957.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF90DH60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgf90dh60t3g-datasheets-2124.pdf | SP3 | 11 | 3 | EAR99 | 416W | UPPER | UNSPECIFIED | 25 | 150°C | Dual | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X11 | 4.3nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 416W | 600V | 36 ns | 2.5V | 110A | Standard | 180 ns | 20V | 250μA | 2.5V @ 15V, 100A | NPT | Yes | 4.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5804US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5802us-datasheets-6897.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF100A120T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | /files/microsemicorporation-aptgf100a120t3ag-datasheets-2249.pdf | SP3 | 10 | 20 | EAR99 | 780W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X10 | 6.5nF | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 190 ns | 1.2kV | 130A | Standard | 1200V | 390 ns | 3.7 V | 250μA | 3.7V @ 15V, 100A | NPT | Yes | 6.5nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N5623US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50DH120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | SP3 | 11 | 16 | EAR99 | No | 277W | UPPER | UNSPECIFIED | 25 | Dual | 2 | Insulated Gate BIP Transistors | R-XUFM-X11 | 3.6nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 277W | 1.2kV | 140 ns | 1.2kV | 75A | Standard | 1200V | 610 ns | 2.1 V | 20V | 250μA | 2.1V @ 15V, 50A | Trench Field Stop | Yes | 3.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST19040 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-fst19040-datasheets-2103.pdf | 3 | Dual Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75H60T2G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | 175°C | -40°C | RoHS Compliant | 2012 | SP2 | 22 Weeks | 22 | OBSOLETE (Last Updated: 3 weeks ago) | 250W | SP2 | 4.62nF | Full Bridge Inverter | 250W | 600V | 600V | 100A | Standard | 600V | 100A | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-JANS1N5617US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300DA170D3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2004 | /files/microsemicorporation-aptgt300da170d3g-datasheets-3898.pdf | D-3 Module | 7 | 36 Weeks | 5 | yes | EAR99 | e1 | TIN SILVER COPPER | 1.47kW | UPPER | UNSPECIFIED | 7 | 1 | Insulated Gate BIP Transistors | R-XUFM-X7 | 26nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1470W | 1.7kV | 430 ns | 1.7kV | 530A | Standard | 1700V | 1200 ns | 20V | 8mA | 2.4V @ 15V, 300A | Trench Field Stop | No | 26nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| WF1M32B-100G2UI3A | Microsemi |
Min: 1 Mult: 1 |
download | RoHS non-compliant | /files/microsemi-wf1m32b100g2ui3a-datasheets-5025.pdf | 68 | Parallel | 1Mx32 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL700U120D4G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl700u120d4g-datasheets-4014.pdf | D4 | Lead Free | 3 | 36 Weeks | 5 | EAR99 | 3kW | UPPER | UNSPECIFIED | 5 | 1 | R-PUFM-X3 | 37.2nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 3000W | 1.2kV | 210 ns | 1.2kV | 910A | Standard | 1200V | 620 ns | 4mA | 2.2V @ 15V, 600A | Trench Field Stop | No | 37.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N6642U | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n6643u-datasheets-6375.pdf | 2 | Single |
