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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Feature | Terminal Finish | Applications | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Number of Inputs | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Core Processor | Connectivity | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| M2S010T-1FGG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 484-BGA | 10 Weeks | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S010T | 484-FPBGA (23x23) | 233 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 10K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N5416UA | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/485 | Surface Mount | Surface Mount | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-2n5415ua-datasheets-1790.pdf | 4-SMD, No Lead | 4 | 4 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | DUAL | 1 | Qualified | SILICON | SINGLE | COLLECTOR | SWITCHING | PNP | 750mW | 300V | 1A | 10000ns | 1000ns | 1mA | PNP | 30 @ 50mA 10V | 2V @ 5mA, 50mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010T-FG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 23mm | 23mm | 484 | 10 Weeks | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 233 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 233 | 166MHz | 233 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N3634 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/357 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2002 | /files/microsemicorporation-jans2n3637-datasheets-3852.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 23 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 1W | BOTTOM | WIRE | 2 | 1W | 1 | Other Transistors | Qualified | SILICON | SINGLE | SWITCHING | PNP | 140V | 1A | 150MHz | 650ns | 200ns | 140V | 5V | 10μA | PNP | 50 @ 50mA 10V | 600mV @ 5mA, 50mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-1FG256IX94 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | Non-RoHS Compliant | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 12 Weeks | A2F500M3G | 256-FPBGA (17x17) | MCU - 25, FPGA - 66 | DMA, POR, WDT | 64KB | MCU, FPGA | 100MHz | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N2904 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/290 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-jantx2n2905a-datasheets-4856.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 600mW | BOTTOM | WIRE | 2 | 600mW | 1 | Other Transistors | Qualified | SILICON | SINGLE | COLLECTOR | SWITCHING | PNP | 800mW | 40V | 600mA | 200MHz | 45ns | 60V | 5V | 1μA | PNP | 40 @ 150mA 10V | 1.6V @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-FCS325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N7373 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/613 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | TO-254-3, TO-254AA (Straight Leads) | 3 | 3 | no | EAR99 | HIGH RELIABILITY | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL | 58W | SINGLE | PIN/PEG | 3 | 1 | Qualified | SILICON | SINGLE | ISOLATED | SWITCHING | NPN | 4W | 80V | 5A | 5A | 50μA | NPN | 70 @ 2.5A 5V | 1.5V @ 500mA, 5A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-FG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 23mm | 23mm | 484 | 10 Weeks | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 233 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 233 | 166MHz | 233 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSC3312YP | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tray | 4 (72 Hours) | 85°C | -30°C | RoHS Compliant | 2006 | /files/microsemicorporation-vsc3312yp-datasheets-2601.pdf | 196-FCBGA | Advanced Signal Equalization | Backplane, Cable Interconnect | 12 | Single | 12:12 | 2.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DHM05G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dhm05g-datasheets-9391.pdf | SP6 | 8 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 8 | 780W | 2 | R-XUFM-X8 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1100A | 0.005Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-FCSG325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50HM38FG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50hm38fg-datasheets-9475.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 12 | 694W | 4 | R-XUFM-X12 | 18 ns | 35ns | 77 ns | 87 ns | 90A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 2500 mJ | 4 N-Channel (H-Bridge) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1FG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 484-BGA | 8 Weeks | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025 | 484-FPBGA (23x23) | 267 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120H29FG | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm120h29fg-datasheets-9526.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 4 | R-XUFM-X12 | 20 ns | 15ns | 45 ns | 160 ns | 34A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 3000 mJ | 4 N-Channel (H-Bridge) | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 374nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-1FCSG325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM19FG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50am19fg-datasheets-9759.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.136kW | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | 18 ns | 35ns | 77 ns | 87 ns | 163A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1136W | 0.019Ohm | 2 N-Channel (Half Bridge) | 22400pF @ 25V | 22.5m Ω @ 81.5A, 10V | 5V @ 10mA | 492nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-1FCSG325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | Lead Free | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 3A991.D | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DHM09TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm10dhm09tg-datasheets-5057.pdf | SP4 | 14 | 4 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 390W | 2 | Not Qualified | 139A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-FGG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 23mm | 23mm | 484 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 267 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 267 | 166MHz | 267 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10TDUM19PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm10tdum19pg-datasheets-5104.pdf | SP6 | 21 | 6 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 208W | 6 | Not Qualified | R-XUFM-X21 | 70A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 300A | 0.021Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 5100pF @ 25V | 21m Ω @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-1FCSG325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DHM35G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50dhm35g-datasheets-5186.pdf | SP6 | 8 | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 8 | 781W | 2 | R-XUFM-X8 | 21 ns | 38ns | 93 ns | 75 ns | 99A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.039Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 14000pF @ 25V | 39m Ω @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1FCS325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DSKM19T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dskm19t3g-datasheets-0396.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 25 | 208W | 2 | 35 ns | 70ns | 125 ns | 95 ns | 70A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1500 mJ | 2 N-Channel (Dual) | 5100pF @ 25V | 21m Ω @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-1VF400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 10 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025T | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50HM75FT3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50hm75ft3g-datasheets-0451.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 25 | 357W | 4 | R-XUFM-X25 | 18 ns | 35ns | 77 ns | 87 ns | 46A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.09Ohm | 2500 mJ | 4 N-Channel (H-Bridge) | 5600pF @ 25V | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F060M3E-TQG144 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 80MHz | RoHS Compliant | 2000 | /files/microsemicorporation-a2f060m3etq144-datasheets-5555.pdf | 144-LQFP | 12 Weeks | EBI/EMI, I2C, SPI, UART, USART | A2F060M3E | 144-TQFP (20x20) | MCU - 21, FPGA - 33 | DMA, POR, WDT | ARM | 16KB | MCU, FPGA | 80MHz | ARM® Cortex®-M3 | EBI/EMI, I2C, SPI, UART/USART | ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops | 128KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60HM70BT3G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2016 | /files/microsemicorporation-aptc60hm70bt3g-datasheets-0490.pdf | SP3 | 36 Weeks | 22 | EAR99 | No | 250W | 250W | 5 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 39A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 700pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Logic Level Gate |
