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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Application | Speed | Watchdog Timer | Power - Max | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Voltage (DC) | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SG1543J-DESC | Microsemi |
Min: 1 Mult: 1 |
download | Voltage Monitor | Tube | RoHS non-compliant | /files/microsemi-sg1543jdesc-datasheets-5709.pdf | 16 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6492 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/567 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6492-datasheets-5005.pdf | TO-205AF Metal Can | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | Single | 1 | Qualified | 1.2A | 680mV | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 45V | 80A | Schottky | 450pF @ 5V 1MHz | 2mA @ 45V | 560mV @ 2A | 3.6A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5811 (CAT3) | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | /files/microsemi-grpadatajan1n5811-datasheets-3001.pdf | 1.65(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5819-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/586 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/586 | WIRE | 2 | Single | 1 | Qualified | 1A | 850mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45V | 1nA | 40V | 50A | Schottky | 1A | 70pF @ 5V 1MHz | 45V | 50μA @ 45V | 490mV @ 1A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5551US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USD245CHR2 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 175°C | -65°C | SCHOTTKY | Non-RoHS Compliant | 1996 | /files/microsemicorporation-usd245chr2-datasheets-4107.pdf | TO-39 | 3 | 8 Weeks | 3 | no | EAR99 | No | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | WIRE | Common Cathode | 2 | 6A | EFFICIENCY | SILICON | 2mA | 45V | 80A | TO-205AF | 0.68V | RECTIFIER DIODE | 1 | 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT20045 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-cpt20040-datasheets-3507.pdf | 3 | Dual Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6079 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/503 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 12A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30 ns | Standard | 50V | 2A | 1 | 10μA @ 50V | 1.5V @ 37.7A | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N5711UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | RoHS non-compliant | /files/microsemi-cds1n5711ur1-datasheets-2148.pdf | 1.7(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30SCD120B | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1999 | /files/microsemicorporation-apt30scd120s-datasheets-7866.pdf | TO-247-2 | Lead Free | 22 Weeks | 2 | EAR99 | No | 8541.10.00.80 | 291W | Single | 1 | Rectifier Diodes | 30A | 1.8V | No Recovery Time > 500mA (Io) | 330A | 1.2kV | 330A | 0 s | Silicon Carbide Schottky | 1.2kV | 99A | 1.2kV | 2100pF @ 0V 1MHz | 1200V | 600μA @ 1200V | 1.8V @ 30A | 99A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R50440 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-r504120-datasheets-5608.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF150A120T3WG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2009 | /files/microsemicorporation-aptgf150a120t3wg-datasheets-2134.pdf | SP3 | 9 | 18 | EAR99 | 961W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X9 | 9.3nF | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 190 ns | 1.2kV | 210A | Standard | 1200V | 390 ns | 3.7 V | 20V | 250μA | 3.7V @ 15V, 150A | NPT | Yes | 9.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFT7260 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS Compliant | /files/microsemi-uft7260-datasheets-0932.pdf | 4 | Dual Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100DH60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Screw, Through Hole | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 11 | 22 Weeks | 16 | EAR99 | 340W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X11 | 6.1nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 340W | 600V | 180 ns | 600V | 150A | Standard | 370 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 100A | Trench Field Stop | Yes | 6.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| UM7201B | Microsemi |
Min: 1 Mult: 1 |
Attenuator|Switch | RoHS non-compliant | /files/microchiptechnology-um7006b-datasheets-7919.pdf | 2.28(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF90DA60CT1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw, Through Hole | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | SP1 | 7 | 12 | EAR99 | No | 416W | UPPER | UNSPECIFIED | 12 | 1 | Insulated Gate BIP Transistors | R-XUFM-X7 | 4.3nF | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 36 ns | 600V | 110A | Standard | 180 ns | 2.5 V | 20V | 250μA | 2.5V @ 15V, 100A | NPT | Yes | 4.3nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5186 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5187-datasheets-3585.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT70GR120J | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2001 | /files/microsemicorporation-apt70gr120j-datasheets-2523.pdf | SOT-227-4 | 22 Weeks | SOT-227 | Single | 543W | Standard | 1200V | 112A | 1mA | 3.2V @ 15V, 70A | NPT | No | 7.26nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5550US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200A120D3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt200a120d3g-datasheets-3903.pdf | D-3 Module | 7 | 36 Weeks | 7 | yes | EAR99 | e1 | TIN SILVER COPPER | 1.04kW | UPPER | UNSPECIFIED | 7 | Dual | 2 | 14nF | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1040W | 1.2kV | 400 ns | 1.2kV | 300A | Standard | 1200V | 830 ns | 6mA | 2.1V @ 15V, 200A | Trench Field Stop | No | 14nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5416US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5418us-datasheets-4295.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300A120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgt300a120g-datasheets-4016.pdf | SP6 | 7 | 36 Weeks | 7 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.38kW | UPPER | UNSPECIFIED | 7 | Dual | 2 | 21nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1380W | 1.2kV | 340 ns | 1.2kV | 420A | Standard | 1200V | 610 ns | 500μA | 2.1V @ 15V, 300A | Trench Field Stop | No | 21nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3595-1/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpabcjantx1n35951-datasheets-5478.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL240TL120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl240tl120g-datasheets-4122.pdf | SP6 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 1kW | 1 | Insulated Gate BIP Transistors | 12.3nF | Three Level Inverter | 1000W | 1.2kV | 2.2V | 305A | Standard | 1200V | 20V | 2mA | 2.2V @ 15V, 200A | Trench Field Stop | No | 12.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HSM5100J/TR | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-hsm5100j-datasheets-2020.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ100DA65T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | /files/microsemicorporation-aptgtq100da65t1g-datasheets-4724.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Boost Chopper | 250W | Standard | 650V | 100A | 100μA | 2.2V @ 15V, 100A | Yes | 6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N1186R | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpadatajan1n1190-datasheets-2479.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ50H65T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | /files/microsemicorporation-aptglq50h65t1g-datasheets-4817.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | SP1 | Full Bridge | 175W | Standard | 650V | 70A | 50μA | 2.3V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N1188 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpadatajan1n1190-datasheets-2479.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL90DSK120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgl90dsk120t3g-datasheets-4878.pdf | SP3 | 36 Weeks | 16 | EAR99 | 385W | NOT SPECIFIED | Dual | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | 4.4nF | Dual Buck Chopper | 385W | 1.2kV | 1.2kV | 110A | Standard | 1200V | 2.25 V | 20V | 250μA | 2.25V @ 15V, 75A | Trench Field Stop | Yes | 4.4nF @ 25V |
