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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Input Capacitance | Forward Current | Forward Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Application | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Recovery Time-Max | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JAN1N914 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/116 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n914-datasheets-7398.pdf | DO-204AH, DO-35, Axial | Contains Lead | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | Single | 1 | Qualified | 1.2V | Small Signal =< 200mA (Io), Any Speed | SILICON | 500nA | 75V | 2A | 5 ns | Standard | 0.075A | 2.8pF @ 1.5V 1MHz | 500nA @ 75V | 1.2V @ 50mA | 200mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5187 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5187-datasheets-3585.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5551 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 5A | 1.2V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 2 μs | Standard | 400V | 3A | 1 | 5A | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6776 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-1n6776-datasheets-5414.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4944 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/360 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | Single | 1 | Qualified | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 15A | 150 ns | Standard | 400V | 1A | 1A | 1μA @ 400V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N6642US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-jantx1n6643ustr-datasheets-8160.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5806US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477F | END | WRAP AROUND | 2 | Single | 1 | Qualified | 2.5A | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N914 T/R | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-1n914tr-datasheets-4494.pdf | 2.29(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4150UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/231 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n4150ur1-datasheets-2339.pdf | DO-213AA | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 50V | 4A | 4 ns | Standard | 100nA @ 50V | 1V @ 200mA | 200mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5614US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 2 μs | Standard | 200V | 1A | 1A | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT150DL60B2G | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tube | RoHS Compliant | /files/microsemi-apt150dl60b2g-datasheets-5445.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3957 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 30A | DO-41 | Standard | 1kV | 1A | 1A | 1000V | 1μA @ 1000V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTDC30H1201G | Microsemi |
Min: 1 Mult: 1 |
download | RoHS Compliant | /files/microsemi-aptdc30h1201g-datasheets-9499.pdf | 10 | Single | Schottky Diode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6858UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/444 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | DO-213AA | 2 | 15 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 75mA | 650mV | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 70V | Schottky | 0.075A | 4.5pF @ 0V 1MHz | 200nA @ 50V | 650mV @ 15mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N4454-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n44541-datasheets-2271.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6621US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | Contains Lead | 2 | 24 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | 30 ns | Standard | 440V | 2A | 1 | 10pF @ 10V 1MHz | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5417 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5420-datasheets-7765.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR6030L | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-sbr6030l-datasheets-4468.pdf | DO-203AB, DO-5, Stud | 1 | 26 Weeks | 2 | no | EAR99 | REVERSE ENERGY TESTED | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 60A | 480mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5mA | 30V | 1.2kA | Schottky | 30V | 60A | 1 | 5mA @ 30V | 480mV @ 60A | 60A DC | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5550US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1614 | Microsemi |
Min: 1 Mult: 1 |
download | Non-RoHS Compliant | /files/microsemicorporation-jantx1n4459r-datasheets-0398.pdf | 1 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 8541.10.00.80 | e0 | TIN LEAD | NO | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | SINGLE | ANODE | POWER | SILICON | 200V | DO-203AA | 1.5V | RECTIFIER DIODE | 100A | 1 | 15A | 5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-JANS1N5614US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20SCD120S | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1999 | /files/microsemicorporation-apt20scd120s-datasheets-3454.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 22 Weeks | 3 | EAR99 | HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE | No | 8541.10.00.80 | GULL WING | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 1.8V | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 208W | 220A | 400μA | 0 s | Silicon Carbide Schottky | 1.2kV | 68A | 1 | 1135pF @ 0V 1MHz | 1200V | 400μA @ 1200V | 1.8V @ 20A | 68A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R504140 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-r504120-datasheets-5608.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF50TL60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf50tl60t3g-datasheets-2140.pdf | SP3 | 16 | 32 | EAR99 | No | 250W | UPPER | UNSPECIFIED | 25 | 4 | Insulated Gate BIP Transistors | R-XUFM-X16 | 2.2nF | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 250W | 600V | 52 ns | 600V | 65A | Standard | 151 ns | 2.45 V | 20V | 250μA | 2.45V @ 15V, 50A | NPT | Yes | 2.2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5621 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60HM70BT3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 22 Weeks | 3 | EAR99 | 250W | 1 | Insulated Gate BIP Transistors | 3.15nF | Boost Chopper, Full Bridge | 250W | 600V | 1.9V | 50A | Standard | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-JANS1N6761UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n5819ur1-datasheets-5682.pdf | 2.66(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25GF120JCU2 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis, Screw, Stud | Chassis, Stud Mount | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | 227W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 1.65nF | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 110 ns | 1.2kV | 45A | Standard | 1200V | 386 ns | 3.7 V | 20V | 250μA | 3.7V @ 15V, 25A | NPT | No | 1.65nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5614US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single |
