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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Applications | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Architecture | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | JEDEC-95 Code | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Number of Inputs | Organization | Number of Gates | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Off-state Isolation-Nom | On-state Resistance Match-Nom | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Core Processor | Connectivity | Number of Logic Blocks (LABs) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Number of Equivalent Gates | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Current - Collector Cutoff (Max) | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JAN2N6284 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/504 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-jan2n6283-datasheets-5407.pdf | TO-3 | 2 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | Lead, Tin | e0 | Tin/Lead (Sn/Pb) | NPN | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-MBFM-P2 | SILICON | COLLECTOR | SWITCHING | 175W | TO-204AA | 3V | 100V | 4MHz | 20A | 100V | 7V | 1mA | NPN - Darlington | 1250 @ 10A 3V | 3V @ 200mA, 20A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S005-1VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 161 | DDR | 64KB | MCU, FPGA | 161 | 166MHz | 161 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 5K Logic Modules | 6060 | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT8814AP1 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 3 (168 Hours) | CMOS | 4.57mm | RoHS Compliant | 2001 | /files/microsemicorporation-mt8814ap1-datasheets-3095.pdf | 44-LCC | 44 | 26 Weeks | 13.2V | 4.5V | 65Ohm | 44 | yes | 1 | e3 | MATTE TIN | Telecommunications | QUAD | J BEND | 260 | 5V | 44 | 1 | CROSS POINT SWITCH | 30 | Not Qualified | 45MHz | Single | -7V | 65Ohm | 95 dB | 5Ohm | 4.5V~13.2V ±4.5V | 8:12 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S005-VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 161 | DDR | 64KB | MCU, FPGA | 161 | 166MHz | 161 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 5K Logic Modules | 6060 | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N4033 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/512 | Through Hole | Through Hole | -55°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2002 | /files/microsemicorporation-jantx2n4033-datasheets-4909.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 23 Weeks | 3 | no | EAR99 | No | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/512 | 800mW | BOTTOM | WIRE | 2 | 1 | Qualified | SILICON | SINGLE | COLLECTOR | SWITCHING | PNP | 800mW | 80V | 1V | 1A | 210ns | 40ns | 80V | 10μA ICBO | PNP | 100 @ 100mA 5V | 1V @ 100mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-1FG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 100MHz | 3mA | 1.7mm | Non-RoHS Compliant | 2009 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 17mm | 17mm | 256 | 12 Weeks | 256 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | No | TIN LEAD/TIN LEAD SILVER | YES | BOTTOM | BALL | 225 | 1.5V | 1mm | A2F200 | 1.575V | 1.425V | 30 | Field Programmable Gate Arrays | MCU - 25, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 66 | 200000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 8 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3737 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/395 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | /files/microsemicorporation-2n3735l-datasheets-4933.pdf | TO-206AB, TO-46-3 Metal Can | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | 500mW | BOTTOM | WIRE | 3 | 1 | Qualified | SILICON | SINGLE | SWITCHING | NPN | 500mW | 40V | 900mV | 1.5A | 60ns | 48ns | 75V | 10μA ICBO | NPN | 20 @ 1A 1.5V | 900mV @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010-1VF256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N1482 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/207 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | /files/microsemicorporation-2n1479-datasheets-5185.pdf | TO-205AA, TO-5-3 Metal Can | 3 | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 1W | BOTTOM | WIRE | 3 | 1W | 1 | Qualified | SILICON | SINGLE | NPN | 55V | 1.5A | 100V | 12V | 5μA ICBO | NPN | 35 @ 200mA 4V | 750mV @ 10mA, 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-1FG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 100MHz | 3mA | 1.7mm | Non-RoHS Compliant | 2009 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 17mm | 17mm | 256 | 12 Weeks | 256 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | No | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | 225 | 1.5V | 1mm | A2F200 | 1.575V | 1.425V | 20 | Field Programmable Gate Arrays | MCU - 25, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 66 | 200000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 8 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N2432 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/313 | Through Hole | Through Hole | -65°C~175°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-jantx2n2432a-datasheets-0355.pdf | TO-206AA, TO-18-3 Metal Can | 3 | 3 | IN PRODUCTION (Last Updated: 2 days ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 300mW | BOTTOM | WIRE | 3 | 300mW | 1 | Qualified | SILICON | SINGLE | COLLECTOR | CHOPPER | NPN | 360mW | 30V | 100mA | 20MHz | 30V | 15V | 10nA | NPN | 80 @ 1mA 5V | 150mV @ 500μA, 10mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-1VFG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6350 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/472 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2002 | /files/microsemicorporation-jantxv2n6350-datasheets-0403.pdf | TO-205AC, TO-33-4 Metal Can | 4 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | e0 | Tin/Lead (Sn/Pb) | NPN | BOTTOM | WIRE | 4 | Single | 1 | Qualified | SILICON | COLLECTOR | 1W | 1.5V | 80V | 5A | 500ns | 80V | 12V | NPN - Darlington | 2000 @ 5A 5V | 1.5V @ 5mA, 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010T-VF400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 10 Weeks | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 195 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 195 | 166MHz | 195 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N6211 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/461 | Through Hole | Through Hole | -55°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | TO-213AA, TO-66-2 | 2 | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/461E | 3W | BOTTOM | PIN/PEG | 3 | 1 | Qualified | O-MBFM-P2 | SILICON | SINGLE | COLLECTOR | SWITCHING | PNP | 225V | 2A | 2A | 275V | 5mA | PNP | 30 @ 1A 5V | 1.4V @ 125mA, 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-VFG400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 10 Weeks | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 195 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 195 | 166MHz | 195 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N3996 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/374 | Stud | Chassis, Stud Mount | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-jan2n3999-datasheets-5487.pdf | TO-111-4, Stud | 4 | 20 Weeks | 4 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 2W | UPPER | UNSPECIFIED | 4 | 1 | Qualified | SILICON | SINGLE | ISOLATED | SWITCHING | NPN | 80V | 5A | 10A | 100V | 10μA | NPN | 40 @ 1A 2V | 2V @ 500mA, 5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-1FGG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | RoHS Compliant | 2016 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 484-BGA | 10 Weeks | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S010TS | 484-FPBGA (23x23) | 233 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 10K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N3421S | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/393 | Through Hole | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-2n3419s-datasheets-5134.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 20 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 1W | BOTTOM | WIRE | 2 | 1W | 1 | Other Transistors | Qualified | SILICON | SINGLE | COLLECTOR | SWITCHING | NPN | 80V | 3A | 125V | 8V | 5μA | NPN | 40 @ 1A 2V | 500mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-FGG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 23mm | 23mm | 484 | 10 Weeks | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 233 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 233 | 166MHz | 233 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSC3316XJK-60 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tray | 4 (72 Hours) | RoHS Compliant | 2010 | /files/microsemicorporation-vsc3316xjk60-datasheets-2589.pdf | 196-BBGA, FCBGA | 16 Weeks | Advanced Signal Equalization | Backplane, Telecommunications, Video | 16 | 196-FCBGA (15x15) | Single | 16:16 | 2.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-1PQG208 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 100MHz | 4.1mm | RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | 28mm | 28mm | 1.5V | 208 | 12 Weeks | 1.575V | 1.425V | 208 | Ethernet, I2C, SPI, UART, USART | 8542.39.00.01 | Pure Matte Tin (Sn) | YES | QUAD | GULL WING | 245 | 1.5V | 0.5mm | A2F500M3G | 30 | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 11520 CLBS, 500000 GATES | ARM® Cortex®-M3 | Ethernet, I2C, SPI, UART/USART | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | 500000 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM18SCG | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60am18scg-datasheets-5348.pdf | SP6 | Lead Free | 7 | 16 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 833W | UPPER | UNSPECIFIED | 7 | 833W | 2 | R-XUFM-X7 | 21 ns | 30ns | 84 ns | 283 ns | 143A | 30V | SILICON | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 0.018Ohm | 1800 mJ | 2 N-Channel (Half Bridge) | 28000pF @ 25V | 18m Ω @ 71.5A, 10V | 3.9V @ 4mA | 1036nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-FG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 80MHz | 2mA | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 484-BGA | 12 Weeks | 484 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | 100MHz | A2F500M3G | 484-FPBGA (23x23) | MCU - 41, FPGA - 128 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 80MHz | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 24 | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DUM02G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dum02g-datasheets-9467.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 160 ns | 240ns | 160 ns | 500 ns | 495A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1900A | 3000 mJ | 2 N-Channel (Dual) | 40000pF @ 25V | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120TAM34CT3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | Bulk | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120tam34ct3ag-datasheets-9524.pdf | Module | 36 Weeks | SP3 | 1200V 1.2kV | 375W | 6 N-Channel (3-Phase Bridge) | 2788pF @ 1000V | 34mOhm @ 50A, 20V | 4V @ 15mA | 74A Tc | 161nC @ 5V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-1VFG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60TAM24TPG | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60tam24tpg-datasheets-9620.pdf | SP6 | 36 Weeks | 23 | EAR99 | No | 462W | 3 | FET General Purpose Power | 95A | 600V | METAL-OXIDE SEMICONDUCTOR | 462W | 6 N-Channel (3-Phase Bridge) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060T-1FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB |
