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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Datasheet | Length | Width | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Telecom IC Type | Operating Temperature (Max) | Operating Temperature (Min) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Data Rate | Number of I/O | Core Architecture | RAM Size | Output Type | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Special Feature | Application | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Breakdown Voltage | DAC Channels | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Clamping Voltage-Max | JEDEC-95 Code | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Channel Type | Number of Transceivers | Isolation | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | USB | Ethernet | Program Memory Type | Program Memory Size | Number of Terminals | Device Core | SPI | ECCN (US) | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Standard Package Name | Supplier Package | Mounting | Package Height | Package Length | Package Width | PCB changed | Minimum Operating Supply Voltage (V) | Maximum Operating Supply Voltage (V) | Typical Operating Supply Voltage (V) | Supplier Temperature Grade | HTS | Lead Shape | Minimum Input Voltage (V) | Typical Input Voltage (V) | Maximum Input Voltage (V) | Output Voltage (V) | Output Current (A) | Input/Output Type | Switching Regulator | On/Off Logic | Maximum Collector-Emitter Voltage (V) | Typical Collector Emitter Saturation Voltage (V) | Maximum Gate Emitter Voltage (V) | Maximum Power Dissipation (mW) | Maximum Continuous Collector Current (A) | Maximum Gate Emitter Leakage Current (uA) | Military | Output Power (W) | Family Name | Instruction Set Architecture | Maximum CPU Frequency (MHz) | Maximum Clock Rate (MHz) | Data Bus Width (bit) | Programmability | Interface Type | No. of Timers | Number of ADCs | ADC Resolution (bit) | Number of DACs | DAC Resolution (bit) | USART | I2C | Maximum Expanded Memory Size | Watchdog | CECC Qualified | PWM | UART | Parallel Master Port | Real Time Clock | Data Memory Size | I2S |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSZ086P03NS3E G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | ESD PROTECTED | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 13.5A | 160A | 0.0134Ohm | 105 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ900N15NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 8 | 150°C | -55°C | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 38W | 150V | METAL-OXIDE SEMICONDUCTOR | 13A | 52A | 0.09Ohm | 30 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP530N15N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 21A | 84A | 0.053Ohm | 60 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ130N03MS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 175°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 9A | 140A | 0.015Ohm | 9 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP110N20NA | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 300W | 200V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 88A | 352A | 0.011Ohm | 560 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DZ600N14K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-XUFM-X2 | SINGLE | ISOLATED | GENERAL PURPOSE | SILICON | 1400V | RECTIFIER DIODE | 19000A | 1 | 735A | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATR2815TFB | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-atr2815tfb-datasheets-9011.pdf | 10 | Fixed | 3 | Isolated | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| G450HHBK06P2P | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-g450hhbk06p2h-datasheets-6664.pdf | 3 | Dual | N | EAR99 | -55 | 150 | INT-A-PAK 2 | INT-A-PAK 2 | Screw | 25.4 | 101.6 | 63.5 | 3 | 600 | 1.8 | ±20 | 600 | 10 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATW2815S/ESB | Infineon Technologies AG |
Min: 1 Mult: 1 |
Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-atw2805sesb-datasheets-5585.pdf | 10 | Fixed | 1 | Isolated | -55 | 125 | ATW | Through Hole | 12.7(Max) | 59.94(Max) | 34.29(Max) | 10 | Military | 8542.39.00.01 | 19 | 28 | 40 | 15 | 1.333 | DC/DC | Yes | 30(Min) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ASA2815D/HB | Infineon Technologies AG |
Min: 1 Mult: 1 |
Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-asa2805desb-datasheets-8891.pdf | 8 | Fixed | 2 | Isolated | -55 | 125 | ASA | ASA | Through Hole | 6.86(Max) | 27.31(Max) | 27.31(Max) | 8 | Military | 16 | 28 | 40 | 15|-15 | 0.267 | DC/DC | Yes | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAB-C505L-4EM CB TRAY | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Bulk | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-sabc505l4emcbtray-datasheets-2882.pdf | 80 | 46 | 8051 | 512B | ROM | 32KB | 8051 | 70 | QFP | MQFP | Surface Mount | 2 | 14 | 14 | 80 | 5 | Gull-wing | C500 | CISC | 20 | 20 | 8 | Yes | USART | 3 | Single | 10 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SABC161PILMCA | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-safc161pilmcat-datasheets-7722.pdf | 100 | 76 | C166 | 3KB | CAN Controller | ROMLess | C166 | 1 | EAR99 | 70 | QFP | MQFP | Surface Mount | 2.71 | 20 | 14 | 100 | 4.5 | 5.5 | 5 | Gull-wing | 1500 | C166 | CISC|RISC | 25 | 25 | 16 | No | I2C/SPI/USART | 5 | Single | 10 | 1 | 2 | 16MB | 1 | No | 1 | No | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAFC167CSLMCA+X | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-sabc167csl40mcax-datasheets-1764.pdf | 144 | 111 | C166 | 11KB | CAN Controller | ROMLess | -40 | 85 | QFP | MQFP | Surface Mount | 3.32 | 28 | 28 | 144 | 4.5 | 5.5 | 5 | Industrial | Gull-wing | 1500 | C166 | CISC|RISC | 25 | 25 | 16 | No | ASC/CAN/SSC | 5 | Single | 10 | 16MB | 1 | No | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP041N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 120A | 480A | 0.0041Ohm | 900 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N50C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 50W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 4.5A | 13.5A | 0.95Ohm | 130 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0901NS | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 22A | 160A | 0.0026Ohm | 150 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESD8V0L2B-03L E6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | AVALANCHE | RoHS Compliant | EAR99 | compliant | 8541.10.00.50 | e4 | Gold (Au) | BIDIRECTIONAL | AEC-Q101 | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 125°C | -55°C | NOT SPECIFIED | 2 | Transient Suppressors | R-XBCC-N3 | SEPARATE, 2 ELEMENTS | 8.5V | SILICON | 14V | 8.5V | 26V | TRANS VOLTAGE SUPPRESSOR DIODE | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB030N08N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 160A | 640A | 0.003Ohm | 510 mJ | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DZ600N16K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | unknown | NO | 2 | 150°C | 1 | Rectifier Diodes | SINGLE | 1600V | RECTIFIER DIODE | 19000A | 735A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL2815DZ/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl2815dzes-datasheets-5176.pdf | 12 | Fixed | 2 | Isolated | -55 | 125 | AFL | AFL | Screw | 9.65(Max) | 38.1 | 63.5 | 12 | Military | 8542.39.00.01 | 16 | 28 | 40 | 15|-15 | 5.3 | DC/DC | Yes | Positive | 100(Min) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAK-XC2267M-104F80L AA | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-sakxc2267m104f80laa-datasheets-7675.pdf | 100 | 76 | C166 | 48KB | CAN Controller | Flash | 832KB | C166SV2 | 1 | 3A991.a.2 | -40 | 125 | QFP | LQFP EP | Surface Mount | 1.4 | 14 | 14 | 100 | 1.4|3 | 5.5|1.6 | 5|3.3 | Automotive | Gull-wing | 1000 | XC2000 | CISC|DSP|RISC | 80 | 80 | 32|16 | Yes | CAN/I2C/I2S/SPI/UART | 5 | Single | 10 | 1 | 16MB | 1 | No | 1 | 1 | No | Yes | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LS2805S/EM | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-ls2812s-datasheets-9099.pdf | 8 | Fixed | 1 | Isolated | ITAR (XI) | -55 | 85 | LS | LS | Screw | 10.8(Max) | 38.1 | 58.42 | 8 | 8542.39.00.01 | 18 | 28 | 40 | 5 | 6 | DC/DC | Yes | 30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-5962-9463101HXA | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-59629462901hxa-datasheets-6300.pdf | 8 | Fixed | 1 | Isolated | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ3600R12KE3NOSA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tray | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-fz3600r12ke3nosa1-datasheets-3898.pdf | 9 | Triple Common Emitter Common Gate | N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 15LJQ100 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-15ljq100-datasheets-2568.pdf | 3 | Single Dual Anode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XMC4504F144F512AAXQMA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-xmc4504f144k512aaxqma1-datasheets-4075.pdf | 144 | 91 | ARM | 128KB | CAN Controller | 2 | 1 | 1 | Flash | 512KB | ARM Cortex M4 | 6 | -40 | 85 | QFP | LQFP EP | Surface Mount | 1.4 | 20 | 20 | 144 | 3.13 | 3.63 | 3.3 | Gull-wing | XMC4000 | RISC | 120 | 120 | 32 | Yes | CAN/Ethernet/I2C/I2S/LIN/SPI/UART/USB | 4 | Quad | 12/12/12/12 | Single | 12 | 6 | 1 | No | 4 | 6 | 64KB | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R380C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | HIGH VOLTAGE | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 83W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 10.6A | 30A | 0.38Ohm | 210 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB049NE7N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150W | 75V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 80A | 320A | 0.0049Ohm | 370 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB160N04S3-H2 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 214W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 160A | 640A | 0.0021Ohm | 898 mJ | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE6250G V33 | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | BICMOS | 1.75mm | RoHS Compliant | 5mm | 4mm | compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3.3V | 1.27mm | 8 | INTERFACE CIRCUIT | 40 | Network Interfaces | 3.35V | 0.07mA | Not Qualified | R-PDSO-G8 | AEC-Q100 | 1000 Mbps | 1 | 8 |
