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ContactInfineon Technologies AG(430)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Datasheet | Length | Width | Factory Lead Time | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Screening Level | Number of I/O | Core Architecture | RAM Size | Output Type | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Special Feature | Application | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Product Weight (g) | Input Voltage (Min) | Input Voltage (Max) | Diode Element Material | Rep Pk Reverse Voltage-Max | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Diode Type | Regulator Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Channel Type | Isolation | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Dropout Voltage1-Nom | Load Regulation-Max(%) | Line Regulation-Max (%/V) | Avalanche Energy Rating (Eas) | Adjustability | Line Regulation | Load Regulation | Dropout Voltage1-Max | Output Voltage1-Max | Voltage Tolerance-Max | Output Voltage1-Min | Input Voltage Absolute-Max | Output Current1-Max | Program Memory Type | Program Memory Size | Operating Temperature TJ-Max | Operating Temperature TJ-Min | Number of Terminals | Output Voltage1-Nom | Device Core | SPI | ECCN (US) | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Standard Package Name | Supplier Package | Mounting | Package Height | Package Length | Package Width | PCB changed | Minimum Operating Supply Voltage (V) | Maximum Operating Supply Voltage (V) | Typical Operating Supply Voltage (V) | Supplier Temperature Grade | HTS | Lead Shape | Minimum Input Voltage (V) | Typical Input Voltage (V) | Maximum Input Voltage (V) | Output Voltage (V) | Output Current (A) | Minimum Isolation Voltage | Input/Output Type | Switching Frequency (kHz) | Switching Regulator | Efficiency (%) | On/Off Logic | Maximum Collector-Emitter Voltage (V) | Typical Collector Emitter Saturation Voltage (V) | Maximum Gate Emitter Voltage (V) | Maximum Power Dissipation (mW) | Maximum Continuous Collector Current (A) | Maximum Gate Emitter Leakage Current (uA) | Military | Output Power (W) | Family Name | Instruction Set Architecture | Maximum CPU Frequency (MHz) | Maximum Clock Rate (MHz) | Data Bus Width (bit) | Programmability | Interface Type | No. of Timers | Number of ADCs | ADC Resolution (bit) | USART | I2C | Maximum Expanded Memory Size | Watchdog | CECC Qualified | PWM | UART | Analog Comparators |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSB013NE2LXI | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 57W | 25V | METAL-OXIDE SEMICONDUCTOR | 163A | 400A | 0.0018Ohm | 130 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R950C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 37W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 4.4A | 12A | 0.95Ohm | 46 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC900N20NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 15.2A | 61A | 0.09Ohm | 100 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP200N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 64A | 256A | 0.02Ohm | 320 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N04LS | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e3 | TIN | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 32A | 400A | 0.0019Ohm | 170 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD98N22K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | -40°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 2200V | 25000μA | 1.53V | RECTIFIER DIODE | 2000A | 1 | 98A | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48VSPBF | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | [object Object] | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150W | 60V | METAL-OXIDE SEMICONDUCTOR | 72A | 290A | 0.012Ohm | 166 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL27015SX/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl27015sxhb-datasheets-2850.pdf | 12 | Fixed | 1 | 85 | Isolated | 10mV | 1% | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AHE2815DF/CH | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-ahe2812dfch-datasheets-1796.pdf | 10 | Fixed | 2 | Isolated | -55 | 125 | AHE | Screw | 12.57(Max) | 53.85(Max) | 28.45(Max) | 10 | Military | 17 | 28 | 40 | 15|-15 | 0.5|-0.5 | DC/DC | Yes | 15(Min) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M3GB2815D/CKC | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-m3gb2803r3scka-datasheets-5302.pdf | 13 | Fixed | 2 | 110 | Isolated | 20mV | 0.5% | -55 | 135 | M3G | Screw | 12.07(Max) | 63.5 | 77.6(Max) | 13 | 18 | 28 | 50 | 15|-15 | 2.14 | DC/DC | 525 | Yes | 82(Typ) | 40 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAF-XC835MT-2FGI AB | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-safxc835mt2fgiab-datasheets-2813.pdf | 24 | 25 | 8051 | 512B | Flash | 8KB | XC800 | EAR99 | -40 | 85 | SOP | DSO | Surface Mount | 2.45 | 15.6 | 7.6 | 24 | 2.5 | 5.5 | 5|3.3 | Industrial | Gull-wing | XC800 | CISC | 48 | 48 | 8 | Yes | I2C/UART | 3 | Single | 10 | 1 | 1 | No | 1 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S2805S | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-s2805dckc-datasheets-5674.pdf | 7 | Fixed | 1 | 50 | Isolated | 0.5% | 1% | ITAR (XI) | -55 | 85 | Case S | Case S | Screw | 10.8(Max) | 33.27 | 43.43 | 7 | 8542.39.00.01 | 18 | 28 | 40 | 5 | 2 | DC/DC | 575 | Yes | 80(Typ) | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAFC167CRLMHAT | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-c167srlmhakxqla1-datasheets-8323.pdf | 144 | 111 | C166 | 4KB | ROMLess | C166 | 1 | -40 | 85 | QFP | MQFP | Surface Mount | 2.4 | 28 | 28 | 144 | 4.5 | 5.5 | 5 | 8542.31.00.01 | Gull-wing | 1500 | C166 | RISC|CISC | 25 | 25 | 16 | No | CAN/SPI/USART | 5 | Single | 10 | 1 | 16MB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL27005DX/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl27015dxhbb-datasheets-7088.pdf | 12 | Fixed | 2 | Isolated | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE4270-2G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | BIPOLAR | 4.4mm | RoHS Compliant | 10mm | 9.25mm | icon-pbfree yes | EAR99 | not_compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1.7mm | 4 | NOT SPECIFIED | Other Regulators | Not Qualified | R-PSSO-G5 | AEC-Q100 | 1 | 6V | 42V | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | 0.35V | 0.05% | 0.025% | FIXED | 0.7V | 5.1V | 2% | 4.9V | 65V | 0.65A | 125°C | -40°C | 5 | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB039N10N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 214W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-263AA | 160A | 640A | 0.0039Ohm | 340 mJ | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R125C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 219W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 30A | 89A | 0.125Ohm | 636 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ130N03LS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 8 | 150°C | -55°C | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 25W | 30V | METAL-OXIDE SEMICONDUCTOR | 35A | 140A | 0.013Ohm | 9 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI045N10N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 214W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 100A | 400A | 0.0045Ohm | 340 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U104N16RR | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | compliant | 8541.10.00.80 | 150°C | 6 | Bridge Rectifier Diodes | BRIDGE, 6 ELEMENTS | 1600V | 1.3V | BRIDGE RECTIFIER DIODE | 650A | 105A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ1200R17HP4B2BOSA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tray | Trench | Yes with exemptions | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-fz1200r17hp4b2bosa1-datasheets-6179.pdf | 7 | Dual | N | EAR99 | -40 | 150 | Screw | 140 | 130 | 7 | 1700 | 1.9 | ±20 | 8600000 | 1200 | 0.4 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAK-C167CS-L33M | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-sabc167csl40mcax-datasheets-1764.pdf | 144 | 111 | C166 | 11KB | CAN Controller | ROMLess | C166 | 1 | EAR99 | -40 | 125 | QFP | MQFP | Surface Mount | 3.32 | 28 | 28 | 144 | 4.5 | 5.5 | 5 | Industrial | Gull-wing | 1500 | C166 | CISC|RISC | 33 | 33 | 16 | No | CAN/SPI/USART | 5 | Single | 10 | 1 | 16MB | 1 | No | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSO2812S/EM | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-lso2815d-datasheets-2367.pdf | 13 | Fixed | 1 | Isolated | 0.5% | 1% | -50 | 85 | Screw | 12.07(Max) | 63.5 | 77.6(Max) | 13 | 8542.39.00.01 | 18 | 28 | 40 | 2 | 2.5 | 100VDC | DC/DC | 425 to 575 | Yes | 80(Typ) | 30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL12028SX/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl12015sxb-datasheets-1784.pdf | 12 | Fixed | 1 | 85 | Isolated | 70mV | 1% | -55 | 125 | Module | Case X | Screw | 9.65(Max) | 76.2 | 38.1 | 12 | Military | 80 | 120 | 160 | 28 | 4(Min) | 500VDC | DC/DC | 600 | Yes | 85(Typ) | Positive | 112(Min) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATR2812SF/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-atr2815sfesb-datasheets-9548.pdf | 10 | Fixed | 1 | Isolated | 60mV | 60mV | -55 | 125 | ATR | Screw | 9.91(Max) | 73.15(Max) | 28.19 | 10 | Extended | 8542.39.00.01 | 16 | 28 | 40 | 12 | 2.5 | 500VDC | DC/DC | 600 | Yes | 80(Min) | 30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C167CSL33MCAFXQLA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tray | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-sabc167csl40mcax-datasheets-1764.pdf | 144 | 111 | C166 | 11KB | CAN Controller | ROMLess | C166 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-5962-0424301KXC | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down|Inverting|Non-Inverting | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-s2805dckc-datasheets-5674.pdf | 7 | Fixed | 2 | 50 | Isolated | 0.5% | 1% | -55 | 125 | Case S | Case S | Screw | 10.8(Max) | 33.27 | 43.43 | 7 | Military | 18 | 28 | 40 | -12|12 | 0.66 | DC/DC | 575 | Yes | 81(Typ) | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAKC167CRLMHA+ | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-c167srlmhakxqla1-datasheets-8323.pdf | 144 | 111 | C166 | 4KB | CAN Controller | ROMLess | C166 | 1 | 3A991.a.2 | -40 | 125 | QFP | MQFP | Surface Mount | 2.4 | 28 | 28 | 144 | 4.5 | 5.5 | 5 | Industrial | Gull-wing | 1500 | C166 | CISC|RISC | 25 | 25 | 16 | No | CAN/SPI/USART | 5 | Single | 10 | 1 | 16MB | 1 | No | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R600C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 63W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 7.3A | 19A | 0.6Ohm | 133 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB320N20N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 34A | 136A | 0.032Ohm | 190 mJ | 2 |
